Untitled
Abstract: No abstract text available
Text: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM416S4020B
PC100
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Untitled
Abstract: No abstract text available
Text: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM416S4020B
PC100
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PDF
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TSOP54
Abstract: tsop-54 MA3.1 DMD20
Text: 1 2 VCC3 3 4 5 6 7 8 MEM_VCC3 JP43 1 2 MEM_VCC3 JP_SMT4_DFS C160 10U 1210 JP45 1 2 JP_SMT4_DFS C127 0.1U 0603B ON BOARD SDRAM 0 32 MB C140 0.1U 0603B C139 0.1U 0603B C141 0.1U 0603B C156 0.1U 0603B C171 0.1U 0603B C155 0.1U 0603B C170 0.1U 0603B JP46 1 A
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100MHZ
16bit
0603B
0603B
TSOP54
tsop-54
MA3.1
DMD20
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PDF
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KM416S4020
Abstract: KM416S4020BT-G10
Text: KMM366S804BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S804BTL
200mV.
66MHz
KM416S4020
KM416S4020BT-G10
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PDF
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schematic circuit adsl router part list
Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
Text: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol
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KS32C5000
/KS32C50100
32-bit
Print3ff3024
0x1a048060
0x3ff3028
0x1c04a060
0x3ff302c
0x04000380
0x3ff3030
schematic circuit adsl router part list
29e010
78R05
KS32C50100
SNDS100
78R33
MAX232 CPE
29e010 datasheet
c-mac stp
samsung ribbon
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM366S404BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.
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Original
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KMM366S404BTL
200mV.
66MHz
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PDF
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KM416S4020
Abstract: No abstract text available
Text: KM416S4020B CMOS SDRAM 2M x 16Bitx 2 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM416S4020A is 67,108,864 bits synchronous high data • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation rate Dynamic RAM organized as 2 x 2,097,152 words by 16
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OCR Scan
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KM416S4020B
16Bitx
KM416S4020BT-G/F8
KM416S402OBT-G/FH
KM416S4020BT-G/FL
KM416S4020BT-G/F10
KM416S4020A
10/AP
KM416S4020
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PDF
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KM416S4020B
Abstract: No abstract text available
Text: KM416S4020B CMOS SDRAM R evision H istory Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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OCR Scan
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KM416S4020B
PC100
10/AP
KM416S4020B
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PDF
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KM416S4020
Abstract: KM416S4020AT-G
Text: KM416S4020AT SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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OCR Scan
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KM416S4020AT
16Bitx
KM416S4020A/KM416S4021A
KM416S4020AT)
0D33D5S
KM416S4020
KM416S4020AT-G
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PDF
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KM416S4020AT-G
Abstract: XC5L a9333
Text: KM416S4020A CMOS SDRAM 2M X 16Bitx 2 Banks Synchronous DRAM FEATURES . . . . . . GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3
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OCR Scan
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KM416S4020A
16Bitx
KM416S4020A
10/AP
D037221
KM416S4020AT-G
XC5L
a9333
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PDF
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Untitled
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM466S804AT KMM466S804AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM466S804AT
KMM466S804AT
8Mx64
4Mx16,
400mil
144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM366S804BTL PC66 SDRAM MODULE KMM366S804BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S804BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM366S804BTL
KMM366S804BTL
8Mx64
4Mx16,
400mil
168-pin
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PDF
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U07K
Abstract: 741i REF04 KM416S4020AT-12
Text: K M 4 16 S 4 0 2 1 A T SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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OCR Scan
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16Bitx
KM416S4020A/KM416S4021A
416S4021AT)
7Tb4142
U07K
741i
REF04
KM416S4020AT-12
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PDF
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KMM366S404AT
Abstract: circuit diagram for auto on off
Text: KMM366S404AT NEW JEDEC SDRAM MODULE KMM366S404AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM366S404AT
KMM366S404AT
4Mx64
4Mx16,
400mil
168-pin
circuit diagram for auto on off
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PDF
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q37s
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM366S804AT KMM366S804AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S8Q4AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM366S804AT
KMM366S804AT
8Mx64
4Mx16,
KMM366S8Q4AT
400mil
168-pin
q37s
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PDF
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Untitled
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM466S804AT2 KMM466S804AT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT2 is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM466S804AT2
KMM466S804AT2
8Mx64
4Mx16,
KMM466S804AT2-F8
KMM466S804AT2-F0
KMM466S804AT2-F2
400mil
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PDF
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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OCR Scan
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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PDF
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37L34
Abstract: KMM466S404AT-F0
Text: NEW JEDEC SDRAM MODULE KMM466S404AT KMM466S404AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S404AT is a 4M bit x 64 Synchronous - Performance range Max Freq. Speed
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OCR Scan
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KMM466S404AT
KMM466S404AT
4Mx64
4Mx16,
400mil
144-pin
37L34
KMM466S404AT-F0
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM366S404BTL PC66 SDRAM MODULE KMM366S404BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM366S404BTL
KMM366S404BTL
4Mx64
4Mx16,
400mil
168-pin
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PDF
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