KM29V Search Results
KM29V Price and Stock
Samsung Electro-Mechanics KM29V64000T8M X 8 FLASH 3V PROM, 35 ns, PDSO40 |
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KM29V64000T | 14 |
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KM29V64000T | 738 |
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Samsung Electronics Co. Ltd KM29V64000TIN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM29V64000T | 180 |
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KM29V Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| KM29V32000IT |
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Flash Memory | Scan | |||
| KM29V32000RS |
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4M x 8-Bit NAND Flash Memory | Original | |||
| KM29V32000T |
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Flash Memory | Scan | |||
| KM29V32000TS |
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4M x 8-Bit NAND Flash Memory | Original | |||
| KM29V32000TS |
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Flash Memory | Scan | |||
| KM29V64000R |
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8M x 8-Bit NAND Flash Memory | Original | |||
| KM29V64000T |
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8M x 8-Bit NAND Flash Memory | Original | |||
| KM29V64001R |
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8M x 8-Bit NAND Flash Memory | Original | |||
| KM29V64001RS |
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Flash Memory | Scan | |||
| KM29V64001T |
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8M x 8-Bit NAND Flash Memory | Original | |||
| KM29V64001T |
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Flash Memory | Scan | |||
| KM29V64001TS |
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Flash Memory | Scan |
KM29V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PRELIMINARY KM29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit. |
OCR Scan |
KM29V16000ATS/RS 6000A 264-byte 250ns 0D242Ã Figure15 | |
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Contextual Info: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package. |
OCR Scan |
KM29V16000AT, KM29V16000AIT | |
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Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective |
OCR Scan |
KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte. | |
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Contextual Info: KM29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package. |
OCR Scan |
KM29V32000TS 29V32000 KM29N32000 KM29W32000 | |
29V040Contextual Info: FLASH MEMORY KM29V040T, KM29V040IT Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. Historv Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right |
OCR Scan |
KM29V040T, KM29V040IT KM29V040 KM29N040 29W040 29V040 | |
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Contextual Info: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package. |
OCR Scan |
KM29V64000T | |
TS 4142
Abstract: ro1f
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OCR Scan |
KM29V64001 200us 71b4142 DD2447D -TSOP2-400F 74tMAX -TSQP2-400R DD24471 TS 4142 ro1f | |
A17-A22Contextual Info: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase |
OCR Scan |
KM29V64000TS/RS 200us KM29V64000 P2-400F 10max] -TSOP2-400R A17-A22 | |
KM29V16000ATS
Abstract: KM29V16000
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Original |
KM29V16000ATS KM29V16000ATS KM29V16000 | |
400F
Abstract: KM29V64000T
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Original |
KM29V64000T 400F KM29V64000T | |
KM29V16000AIT
Abstract: KM29V16000A KM29V16000AT KM29V16000
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Original |
KM29V16000AT, KM29V16000AIT KM29V16000AIT KM29V16000A KM29V16000AT KM29V16000 | |
3171SContextual Info: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND |
OCR Scan |
KM29V16000ARS KM29V16000ATS/RS 264-byte 250fjs 003172R -TSOP2-400F -TSOP2-400R 3171S | |
29V640Contextual Info: Advance Information FLASH MEMORY KM29V64000T/R 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND - Memory Cell Array •Data Register Flash memory with a spare 256K(262,144)x8 bit. |
OCR Scan |
KM29V64000T/R KM29V64000T/R 528-byte 200ns 29V640 | |
KM29V32000TSContextual Info: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass |
OCR Scan |
KM29V32000TS 250us KM29V32000TS | |
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Contextual Info: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package. |
OCR Scan |
KM29V32000T, KM29V32000IT 29V32000 KM29N32000 KM29W32000 | |
b8331Contextual Info: KM29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND |
OCR Scan |
KM29V32000TS/RS 250us 32000T b8331 | |
29V040Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us |
OCR Scan |
KM29V040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29V040T KM29V040 -TSOP2-400F -TSQP2-400R 29V040 | |
EM 319
Abstract: em319 GD5434
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OCR Scan |
KM29V32000T/R 250us \256Byte\ bH14H EM 319 em319 GD5434 | |
L4142Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AT/R 250us L4142 | |
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Contextual Info: Advance Information KM29V64000T/R FLASH MEMORY 8M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its - Memory Cell Array |
OCR Scan |
KM29V64000T/R KM29V64000T/R 528-byte | |
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Contextual Info: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program |
OCR Scan |
KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte. KM29V040 | |
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Contextual Info: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit |
OCR Scan |
KM29V16000ATS KM29V16000ATS/RS 264-byte 250ps -TSOP2-400F -TSOP2-400R 0031flfll | |
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Contextual Info: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V32000T/R is a 4M 4,194,304 x8 bit NAND • Organization Flash memory with a spare 128K(131,072)x8 bit. - Memory Cell Array : (4M +128K)bit x 8bit |
OCR Scan |
KM29V32000T/R KM29V32000T/R 528-byte 250ns Q02435Ã | |
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Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AT/R 250us 71L4142 | |