KM23V4200D Search Results

Contextual Info: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby iS O S ^m a x.)

Contextual Info: CMOS MASK ROM KM23V4200D 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

40-DIP-600

Abstract: 40DIP600 KM23V4200D
Contextual Info: CMOS MASK ROM KM23V4200D 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

mask rom

Contextual Info: CMOS MASK ROM KM23V4200D 4M-Bit 256KX16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation: 100ns(Max.) 3.0V Operation: 120ns<Max.) . Supply voltage: single +3.0V/ single +3.3V • Current consumption

4200d

Contextual Info: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply volta ge : single +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby :3 0 § ,(m a x .)

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16

48TSOP1

Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15