KM23V32005B Search Results

Contextual Info: KM23V32005B E T CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES G E N E R A L D E S C R I P T IO N • Switchable organization 4,194,304 x 8(byte mode) 2,097,152 x 16(word mode) • Fast access time Random Access Tim e : 100ns(M ax.) Page Access Tim e

32005B

Abstract: mask rom
Contextual Info: Preliminary KM23V32005B E TY/KM23S32005B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time

MASK ROM 32M PROGRAM

Abstract: T-15
Contextual Info: KM23V32005B E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8(byte mode) 2,097,152 x 16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.)

a11y

Contextual Info: CMOS MASK ROM KM23V32005BG 32M-Bit 4Mx8 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Tim e : 100ns(M ax.) Page Access Tim e : 30ns(M ax.) • 8 w ords /1 6 bytes page access

Contextual Info: KM23V32005B E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8(byte mode) 2,097,152 x 16(word mode) • Fast access time Random Access Tim e : 100ns(M ax.) Page Access Tim e : 30ns(M ax.)

Contextual Info: KM23V32005BG CMOS Mas k ROM ELECTRONICS 32M-BÜ 4M X 8/2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time Random A cce ss: 100ns (max.) Page A ccess: 30ns(max.)

Contextual Info: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is

KM23V32005BG

Abstract: KM23V32005BG-10 KM23V32005BG-12 KM23V32005BG-15
Contextual Info: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access

Contextual Info: KM23V32005B E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8(byte mode) 2,097,152 x 16{word mode) • Fast access time Random Access Time : 100ns{Max.) Page Access Time : 30ns(Max.)

T-15

Contextual Info: KM23V32005B E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8(byte mode) 2,097,152 x 16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.)

Contextual Info: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access

KM23V32005BG

Abstract: KM23V32005BG-10 KM23V32005BG-12 KM23V32005BG-15
Contextual Info: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access

mask rom

Contextual Info: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

32005D

Abstract: mask rom
Contextual Info: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)

dsd15

Contextual Info: KM23V32005P E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304*8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation: 100/30ns(Max.)

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16

48TSOP1

Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15