Untitled
Abstract: No abstract text available
Text: KM23V16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access
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KM23V16205DSG
16M-Bit
1Mx16
/512Kx32)
100ns
70-SSOP-500
KM23V16205DSG
70-SSOP-500)
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23V16000D G 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V16000D
16M-Bit
/1Mx16)
100ns
KM23V16000D
42-DIP-600
KM23V16000DG
44-SOP-600
576x16
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KM23V128205SG
Abstract: No abstract text available
Text: KM23V128205SG CMOS MASK ROM 128M-Bit 8Mx16 /4Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 16(word mode) 4,194,304 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)
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KM23V128205SG
128M-Bit
8Mx16
/4Mx32)
100/30ns
120/40ns
80/70mA
70-SSOP-500
KM23V128205SG
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Untitled
Abstract: No abstract text available
Text: Preliminary PRELIMINARY CMOS MASK ROM KM23V16000C E T 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM23V16000C(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology,
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KM23V16000C
16M-Bit
/1Mx16)
44-TSOP2.
100pF
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Untitled
Abstract: No abstract text available
Text: KM23V16000D E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V16000D
16M-Bit
/1Mx16)
100ns
44-TSOP2-400
152x8
576x16
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KM23V16000DT-12
Abstract: No abstract text available
Text: KM23V16000DT CMOS MASK ROM 16M-Bit 2Mx8 /1Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption
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KM23V16000DT
16M-Bit
/1Mx16)
100ns
44-TSOP2-400
KM23V16000DT
152x8
576x16
KM23V16000DT-12
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KM23V128005TY
Abstract: 48-TSOP1
Text: KM23V128005TY CMOS MASK ROM 128M-Bit 16Mx8 /8Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 16,777,216 x 8(byte mode) 8,388,608 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)
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KM23V128005TY
128M-Bit
16Mx8
/8Mx16)
100/30ns
120/40ns
80/70mA
48-TSOP1-1218
KM23V128005TY
48-TSOP1
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KM23V16205
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23V16205DSG 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.)
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KM23V16205DSG
16M-Bit
1Mx16
/512Kx32)
100ns
70-SSOP-500
KM23V16205DSG
Q15/Q31
KM23V16205
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Untitled
Abstract: No abstract text available
Text: Advance Information KM23V128000TY CMOS MASK ROM 128M-Bit 16Mx8 /8Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 16,777,216 x 8(byte mode) 8,388,608 x 16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 135ns(Max.)
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KM23V128000TY
128M-Bit
16Mx8
/8Mx16)
120ns
135ns
40/35mA
48-TSOP1-1218
KM23V128000TY
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Untitled
Abstract: No abstract text available
Text: KM23V128000TY CMOS MASK ROM 128M-Bit 16Mx8 /8Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 16,777,216 x 8(byte mode) 8,388,608 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V128000TY
128M-Bit
16Mx8
/8Mx16)
100ns
120ns
40/35mA
48-TSOP1-1218
KM23V128000TY
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mask rom
Abstract: No abstract text available
Text: KM23V16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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KM23V16005D
16M-Bit
/1Mx16)
100ns
KM23V16005D
42-DIP-600
KM23V16005DG
44-SOP-600
200MAX
mask rom
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Untitled
Abstract: No abstract text available
Text: Advance Information KM23V128205SG CMOS MASK ROM 128M-Bit 8Mx16 /4Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 16(word mode) 4,194,304 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 120/40ns(Max.)
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KM23V128205SG
128M-Bit
8Mx16
/4Mx32)
120/40ns
135/45ns
80/70mA
70-SSOP-500
KM23V128205SG
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Untitled
Abstract: No abstract text available
Text: Advance Information KM23V16205BSG CMOS MASK ROM 16M-Bit 1 Mx16 /512Kx32 CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch a b le organ izatio n 1,408,576 x 16(w ord m ode) 524,288 x 32 (d o u b le w o rd m ode) Fast acce ss tim e Random A ccess : 100ns(m ax.)
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KM23V16205BSG
16M-Bit
/512Kx32)
100ns
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Untitled
Abstract: No abstract text available
Text: Advance Information CMOS MASK ROM KM23V16005BG 16M-Bit 2Mx8 /1Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch a b le organ izatio n 2,0 97,15 2 x 8 (b yte m ode) 1,048,576 x 1 6(w ord m ode) Fast acce ss tim e Random A ccess : 100ns(m ax.) Page A ccess
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KM23V16005BG
16M-Bit
/1Mx16)
100ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23V16101A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 X 8 bit organization • Fast access tim e: 200ns max.) • Supply voltage: single+3V or +3.3V • Current consumption Operating: 25 mA(max.) at VCC=3.0V± 0.3
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KM23V16101A
16M-Bit
200ns
36-pin,
600mll,
KM23V16101A
KM23V16101A-20
KM23V16101A-25
KM23V16101A-30
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • DG17D77 GTD ■ SriGK PRELIMINARY 7^4142 KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152X 8 bit organization • Fast access tim e: 200ns(max.) • Supply voltage: single+3V or +3.3V
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DG17D77
KM23V16100A
16M-Bit
200ns
36-pin,
KM23V16100A
KM23V16100A)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 D0170ñb QQ3 * S H G K PRELIMINARY KM23V16101A CMOS MASK ROM 16M-Bit 2M xQ CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x8 bK organization • Fast access tim e: 200ns(max.) • Supply voltage: aingie+3V or +3.3V
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D0170Ã
KM23V16101A
16M-Bit
152x8
200ns
36-pin,
600mH,
KM23V16101A
KM23V16101A-20
KM23V16101A-25
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Untitled
Abstract: No abstract text available
Text: 7Rbm42 L7E D 0017103 T12 p r e lim in a r y isuck CMOS MASK ROM KM23V16000A G SAM S UN G E L E C T R O N I C S INC 16M-BH (2M X 8 / 1 M x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x8(byte mode) 1,048,578 x 16(word mode)
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7Rbm42
KM23V16000A
16M-BH
200ns
42-pin,
600mil,
44-pin,
KM23V16000AÃ
KM23V16000A)
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23V16000D E T 1 6 M-Bit (2 Mx8 /1 Mx1 6 ) CM OS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns<Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption
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KM23V16000D
44-TSQP2-400
152x8
576x16
100pF
KM23V1SOOOO
KM23V1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x8 bit organization • Fast access time : 200ns(max.) • Supply voltage : single+3V or +3.3V • Current consumption Operating : 25 mA(max.) at VCC=3.0V± 0.3
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KM23V16100A
16M-Bit
152x8
200ns
36-pin,
600mil,
KM23V16100A
KM23V16100A-25
KM23V16100A-30
KM23V161OOA
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Untitled
Abstract: No abstract text available
Text: KM23V16000CG CMOS MASK ROM 16M-Bit 2Mx8 /1MX16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8{byte mode) 1,048,576 x 16{word mode) • Fast access time 3.3V operation: 120ns(Max.) 3.0V operation: 15Cns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V16000CG
16M-Bit
/1MX16)
120ns
15Cns
44-SQP-400
KM23V16000CG
576x16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS MASK ROM KM23V16000A G 16M-BH (2M X 8/1M x 16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,578 x 16(word mode) • Fast access tim e : 200ns(max.) • Supply voltage: single+3V or +3.3V
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KM23V16000A
16M-BH
200ns
50//A
42-pin,
600mil,
44-pin,
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Untitled
Abstract: No abstract text available
Text: KM23V1 &OOOC E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V operation: 120ns(Max.) 3.0V operation : 150ns(Max.) • Supply voltage: single +3.0W single +3.3V
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KM23V1
16M-Bit
/1Mx16)
120ns
150ns
KM23V16QOOC
44-TSQP2-400
KM23V16000C
152x8
576x16
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44SOP
Abstract: 2MX16 1MX16
Text: M E M O R Y IC s FUNCTION G UIDE 2.6 MASK ROM Continued Capacity Part Number Orgnization Speedfns) Tech. 2MX 8/ 150/200/250 CMOS 2Mx8/ 1M X 16 120/150/200 CMOS * KM23C16005A(G) 2Mx8/ 120/150/200 CMOS (tltt?50) t KM23V16000A(G) 1Mx16 2Mx8/ 1Mx16 KM23C16000(G)
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KM23C16000
KM23C16000A
KM23C16005A
KM23V16000A
1Mx16
2Mx16
2Mx16
44SOP
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