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    K9T1G08U0M Search Results

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    K9T1G08U0M Price and Stock

    Samsung Semiconductor K9T1G08U0M-PCB0000

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K9T1G08U0M-PCB0000 6
    • 1 $16.8
    • 10 $12.6
    • 100 $12.6
    • 1000 $12.6
    • 10000 $12.6
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    Samsung Semiconductor K9T1G08U0MYIB0

    Flash, 128MX8, 45ns, PDSO48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA K9T1G08U0MYIB0 19,445
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    K9T1G08U0M Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9T1G08U0M Samsung Electronics Original PDF
    K9T1G08U0M-B Samsung Electronics Original PDF
    K9T1G08U0M-BCB0 Samsung Electronics Original PDF
    K9T1G08U0M-F Samsung Electronics V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory Original PDF
    K9T1G08U0M-FCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48WSOP1 Original PDF
    K9T1G08U0M-P Samsung Electronics V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory Original PDF
    K9T1G08U0M-PCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I Original PDF
    K9T1G08U0M-PIB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I Original PDF
    K9T1G08U0M-V Samsung Electronics V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory Original PDF
    K9T1G08U0M-VCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48WSOP1 Original PDF
    K9T1G08U0M-Y Samsung Electronics V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory Original PDF
    K9T1G08U0M-YCB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I Original PDF
    K9T1G08U0M-YIB0 Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I Original PDF

    K9T1G08U0M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K9T1G08U0M-V

    Abstract: K9T1G08U0M-VCB0 K9T1G08U0M-Y K9T1G08U0M-YCB0
    Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]


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    PDF K9T1G08U0M-YCB0 K9T1G08U0M-VCB0 K9T1G08U0M-V K9T1G08U0M-Y

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original
    PDF K9T1G08U0M

    K9T1G08U0M

    Abstract: K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary 0.2


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    PDF K9T1G08U0M K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability

    K9T1G08U0M-YCB0

    Abstract: K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-VCB0 K9T1G08U0M-Y
    Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]


    Original
    PDF K9T1G08U0M-YCB0 K9T1G08U0M-VCB0 K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y

    TwB 75

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash
    Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original
    PDF K9T1G08U0M TwB 75 SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


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    PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    hy27ug082g2m

    Abstract: hy27ub082g4m hynix nand flash 128mb hynix nand hynix nand flash hy27uh084g2m hynix nand 512M th58nvg st nand flash application note TH58NVG2S3BFT00
    Text: eKF5280 USB2.0 Flash Controller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. February 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation ELAN and ELAN logo


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    PDF eKF5280 eKF5280 hy27ug082g2m hy27ub082g4m hynix nand flash 128mb hynix nand hynix nand flash hy27uh084g2m hynix nand 512M th58nvg st nand flash application note TH58NVG2S3BFT00

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan
    PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand