STMicroelectronics NAND256W3A
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
STMicroelectronics NAND256W3A
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary
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HY27SS
HY27US
512Mbit
64Mx8bit
32Mx16bit)
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C4858
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
C4858
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reset nand flash HYNIX
Abstract: hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand
Text: S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for
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S30MS01GP
reset nand flash HYNIX
hynix mcp
hynix nand PROGRAMMING
hynix NAND ECC
hynix nand spare area
hynix nand
Hynix E NAND
hynix nand 2G
nand flash HYNIX 1gb
toshiba mcp nand
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary
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HY27SS
HY27US
256Mbit
32Mx8bit
16Mx16bit)
256Mb
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WSOP48
Abstract: No abstract text available
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
WSOP48
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NAND01G-A
Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
nand TSOP48
SE5055
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Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.
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AN1838
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
Samsung k9f1208u
SAMSUNG NAND FLASH
samsung nand
WSOP48
K9F28
NAND FLASH BGA
samsung 1Gb nand flash
NAND01G cache program
"NAND Flash"
128M NAND Flash Memory
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hynix nand
Abstract: HY27U HY27S 561M-TP
Text: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft JULY.10.2003 Preliminary
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HY27SS
HY27US
256Mbit
32Mx8bit
16Mx16bit)
hynix nand
HY27U
HY27S
561M-TP
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Untitled
Abstract: No abstract text available
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
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toshiba nand tc58
Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
Text: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a
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AN1839
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
toshiba nand tc58
toshiba Nand flash
toshiba Nand part numbering
tc58 flash
samsung tc58
Toshiba NAND
TOSHIBA TC58 cmos memory -NAND
NAND256-A
TOSHIBA part numbering
VFBGA63
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SAMSUNG NAND FLASH
Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for
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AN1838
Byte/264
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
SAMSUNG NAND FLASH
Samsung 256 Gbit nand
NAND01G cache program
Samsung k9f1208u
K9F1208U0M
NAND FLASH BGA
Samsung Nand
tbga 6x8 Package
WSOP48
bga 6x8
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fbga63 package
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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NAND128-A
NAND256-A
128-Mbit
256-Mbit
528-byte/264-word
32-Mbit
fbga63 package
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WSOP48
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
WSOP48
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
NAND01GR
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st nand
Abstract: FBGA63
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
TSOP48
USOP48
st nand
FBGA63
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Untitled
Abstract: No abstract text available
Text: HY27US 08/16 1G1M Series HY27SS(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.1 Defined Target Spec. Mar. 2004 Preliminary
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HY27US
HY27SS
128Mx8bit
64Mx16bit)
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HY27US08121
Abstract: No abstract text available
Text: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary
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HY27SS
HY27US
512Mbit
64Mx8bit
32Mx16bit)
HY27US08121
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NAND FLASH BGA
Abstract: nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
NAND FLASH BGA
nand flash 128mbit
VFBGA63
WSOP48
NAND01G-A
NAND128-A
NAND128R3A
NAND256-A
NAND512-A
NAND256A
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NS4159
Abstract: 528-byte
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • ● ■ High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
NS4159
528-byte
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USOP48
Abstract: NAND512-A STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 SLC ball 128 mcp IBIS Models TSOP48 outline NAND01G-A NAND128-A NAND128W3A
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
USOP48
NAND512-A
STMicroelectronics NAND256W3A
FLASH 512Mb 1.8V VFBGA63 SLC
ball 128 mcp
IBIS Models
TSOP48 outline
NAND01G-A
NAND128-A
NAND128W3A
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HY27USXX121M
Abstract: hynix nand PROGRAMMING reset nand flash HYNIX hynix 1g flash memory HY27US08121 HY27US16121M HY27SSXX121M
Text: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary
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HY27SS
HY27US
512Mbit
64Mx8bit
32Mx16bit)
HY27USXX121M
hynix nand PROGRAMMING
reset nand flash HYNIX
hynix 1g flash memory
HY27US08121
HY27US16121M
HY27SSXX121M
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003
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HY27UA
HY27SA
128Mx8bit
64Mx16bit)
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TFBGA55
Abstract: NAND512-A bga 6x8 Package NAND01G-A NAND128-A NAND256-A VFBGA63
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
TFBGA55
NAND512-A
bga 6x8 Package
NAND01G-A
NAND128-A
NAND256-A
VFBGA63
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toshiba nand tc58
Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48
Text: AN1839 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a Toshiba device.
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AN1839
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
toshiba nand tc58
TOSHIBA TC58
TOSHIBA TC58 cmos memory -NAND
toshiba nand flash
ST NAND
TOSHIBA part numbering
Toshiba NAND
diode m7 toshiba
samsung tc58
WSOP48
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