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    Samsung Semiconductor K6T1008C2E-GB70

    IC,SRAM,128KX8,CMOS,SOP,32PIN,PLASTIC
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    Quest Components K6T1008C2E-GB70 188
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    K6T1008C2E-GB70 88
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    K6T1008C2E-GB70 11
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    K6T1008C2E-GB70 4
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    Chip 1 Exchange K6T1008C2E-GB70 715
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    Samsung Electronics Co. Ltd K6T1008C2E-GB70

    Electronic Component
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    ComSIT USA K6T1008C2E-GB70 1,752
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    Samsung Electronics Co. Ltd K6T1008C2EGB70

    Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
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    ComSIT USA K6T1008C2EGB70 370
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    Others K6T1008C2E-GB70

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    K6T1008C2EGB70 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6T1008C2E-GB70 Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Original PDF

    K6T1008C2EGB70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-TB55
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		PDF K6T1008C2E 128Kx8 0820F) K6T1008C2E-GB70 K6T1008C2E-TB55

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		PDF K6T1008C2E 128Kx8 0820R) K6T1008C2E-GB70 K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70

    K6T1008C2E

    Abstract: K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		PDF K6T1008C2E 128Kx8 0820R) K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    K6T1008C2E-DB70

    Abstract: No abstract text available
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original     		PDF K6T1008C2E 128Kx8 0820F) K6T1008C2E-DB70

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-DL70 K6T1008C2E K6T1008C2E-DB55 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P K6T1008C2ETB70 K6T1008C2E-DB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		PDF K6T1008C2E 128Kx8 th010 0820R) K6T1008C2E-GB70 K6T1008C2E-DL70 K6T1008C2E-DB55 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P K6T1008C2ETB70 K6T1008C2E-DB70