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    K6R4008 Search Results

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    K6R4008 Price and Stock

    Samsung Semiconductor K6R4008C1D-UI10

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    Bristol Electronics K6R4008C1D-UI10 1,248
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    Samsung Semiconductor K6R4008V1D-JC10

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    Bristol Electronics K6R4008V1D-JC10 543
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    Quest Components K6R4008V1D-JC10 434
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    K6R4008V1D-JC10 30
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    K6R4008V1D-JC10 4
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    SAM/PULLS K6R4008V1D-TC10

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    Bristol Electronics K6R4008V1D-TC10 333
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    Samsung Semiconductor K6R4008C1D-JI10

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    Samsung Semiconductor K6R4008V1D-UI10

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    Bristol Electronics K6R4008V1D-UI10 179
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    Quest Components K6R4008V1D-UI10 7
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    K6R4008 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6R4008C1C Samsung Electronics 512K x 8-Bit High Speed Static CMOS SRAM Original PDF
    K6R4008C1C-C Samsung Electronics 512K x 8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Original PDF
    K6R4008C1C-C10 Samsung Electronics 512K x 8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Original PDF
    K6R4008C1C-C12 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1C-C15 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1C-E Samsung Electronics 512K x 8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Original PDF
    K6R4008C1C-E10 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1C-E12 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1C-E15 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1C-I Samsung Electronics 512K x 8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Original PDF
    K6R4008C1C-I10 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1C-I12 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1C-I15 Samsung Electronics 512K x 8-Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1D Unknown 512K x 8 Bit High Speed Static RAM(5.0V Operating). Original PDF
    K6R4008C1D Samsung Electronics 1Mx4 Bit High Speed Static RAM (3.3V Operating) Original PDF
    K6R4008C1D-JC Samsung Electronics Original PDF
    K6R4008C1D-JC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008C1D-JI10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008C1D-J(T)C(I)10 Samsung Electronics 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008C1D-KC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF

    K6R4008 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008V1C-C, K6R4008V1C-I Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4008V1C-C, K6R4008V1C-I 512Kx8 160mA 155mA 150mA 195mA 190mA 185mA 44-TSOP2-400BF

    K6R4016V1D-J

    Abstract: K6R4008V1D
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4016V1D-J K6R4008V1D

    SRAM sheet samsung

    Abstract: K6R4008C1B
    Text: PRELIMINARY CMOS SRAM K6R4008C1B-C, K6R4008C1B-I Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		PDF K6R4008C1B-C, K6R4008C1B-I 512Kx8 200mA 190mA 180mA 36-TSOP2-400F 002MIN SRAM sheet samsung K6R4008C1B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY K6R4008V1C-C/C-L, K6R4008V1C-I/C-P CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 512Kx8 160mA 155mA 150mA 195mA 190mA 185mA 44-TSOP2-400BF

    K6R4016V1D-J

    Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF 002MIN K6R4016V1D-J K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016

    k6r4008c1d-j

    Abstract: K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D
    Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		PDF K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF k6r4008c1d-j K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF

    44-TSOP2-400AF

    Abstract: K6R4008
    Text: PRELIMINARY K6R4008V1B-C/B-L, K6R4008V1B-I/B-P CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		PDF K6R4008V1B-C/B-L, K6R4008V1B-I/B-P 512Kx8 170mA 160mA 150mA 002MIN 44-TSOP2-400AF 44-TSOP2-400AF K6R4008

    K6R4008V1D

    Abstract: K6R4016V1D-J k6r4008c1d Samsung K6R4008C1D
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF K6R4008V1D K6R4016V1D-J k6r4008c1d Samsung K6R4008C1D

    k6r4008v1c-t

    Abstract: No abstract text available
    Text: PRELIMINARY K6R4008V1C-C/C-L, K6R4008V1C-I/C-P CMOS SRAM 3Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 512Kx8 160mA 155mA 150mA 195mA 190mA 185mA 44-TSOP2-400BF k6r4008v1c-t

    K6R4008C1C-J

    Abstract: No abstract text available
    Text: PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I 512Kx8 170mA 165mA 160mA 195mA 190mA 185mA K6R4008C1C-J

    k6r4008c1c-j

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1C-C, K6R4008C1C-I Document Title 512Kx8 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4008C1C-C, K6R4008C1C-I 512Kx8 170mA 165mA 160mA 195mA 190mA 185mA pre70 k6r4008c1c-j

    Samsung K6R4008C1D

    Abstract: K6R4008C1D 317 mg K6R4008V1D SAMSUNG SRAM 110e4
    Text: Single Event Latch-Up Testing on Samsung Rev. D 4M Fast Asynchronous SRAM Joseph Benedetto, Ph.D. Craig Hafer 719-594-8319 craig.hafer@aeroflex.com Summary—Single event latch-up SEL testing was performed on the Samsung K6R4008V1D and K6R4008C1D 3.3 and 5.0V 4M Asynchronous SRAMs (respectively) at the Texas A&M


    Original     		PDF K6R4008V1D K6R4008C1D K6R4008V1D EIA/JESD57 Samsung K6R4008C1D 317 mg SAMSUNG SRAM 110e4

    K6R4008C1D

    Abstract: K6R4004C1D-JC K6R4016V1D-J Samsung K6R4008C1D 32SOJ
    Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		PDF K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF 002MIN K6R4008C1D K6R4004C1D-JC K6R4016V1D-J Samsung K6R4008C1D 32SOJ

    K6R4008

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4008

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY K6R4008C1A-C, K6R4008C1A-E, K6R4008C1A-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data


    Original     		PDF K6R4008C1A-C, K6R4008C1A-E, K6R4008C1A-I 512Kx8 36-SOJ-400

    K6R4008C1C-C

    Abstract: K6R4008C1C-E K6R4008C1C-I K6R4008C1C-J
    Text: PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I 512Kx8 170mA 165mA 160mA 195mA 190mA 185mA K6R4008C1C-C K6R4008C1C-E K6R4008C1C-J

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B