K6R1008V1D Search Results
K6R1008V1D Price and Stock
Samsung Semiconductor K6R1008V1D-TI10 |
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K6R1008V1D-TI10 | 2,000 |
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Samsung Semiconductor K6R1008V1D-TC10 |
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K6R1008V1D-TC10 | 432 |
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Samsung Semiconductor K6R1008V1D-JC10 |
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K6R1008V1D-JC10 | 24 |
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K6R1008V1D-JC10 | 130 |
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Samsung Semiconductor K6R1008V1D-JC08 |
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K6R1008V1D-JC08 | 10 |
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K6R1008V1D-JC08 | 4,800 |
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Samsung Semiconductor K6R1008V1DTC10128K X 8 BIT HIGH-SPEED CMOS STATIC RAM (3.3V OPERATING) Standard SRAM, 128KX8, 10ns, CMOS, PDSO32 |
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K6R1008V1DTC10 | 163 |
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K6R1008V1D Datasheets (21)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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K6R1008V1D |
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128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-JC08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-JC10 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-JI08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-JI10 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-J(T)C(I)08 |
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64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-J(T)C(I)08/10 |
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64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-J(T)C(I)08_10 |
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64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-J(T)C(I)10 |
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64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-KC08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-KC10 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-KI08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-KI10 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-TC08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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K6R1008V1D-TC10 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-TI08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-TI10 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-UC08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-UC10 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
K6R1008V1D-UI08 |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Original |
K6R1008V1D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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K6R1008V1DContextual Info: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify |
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K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D | |
K6R1008V1DContextual Info: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify |
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K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D | |
K6R1008V1D
Abstract: 32-SOJ 44TSOP
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K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 047MAX K6R1008V1D 32-SOJ 44TSOP | |
K6R1004C1DContextual Info: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin. |
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K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D | |
K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
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BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm | |
CS16LV40963
Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
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32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D | |
RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
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BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B | |
1H08S
Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
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ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA IMP1232LPEMA ASM1232LPN 1H08S PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR | |
K6R1016V1DContextual Info: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify |
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K6R1016V1D 64Kx16 100mA 55/Typ. 35/Typ. K6R1016V1D | |
K7A803609B-PC25
Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
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K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 | |
ADM809RAR
Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
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IS61LV25616AL IS61LV5128AL IS61LV6416 IS61C6416 IS61LV1024 48-pin AS9C25256M2036L AS9C25512M2018L 512Kx18 ADM809RAR AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857 | |
K6R1016C1DContextual Info: Preliminary PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. Rev. Rev. Rev. Initial release with Preliminary. |
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K6R1016C1D 64Kx16 55/Typ. 35/Typ. K6R1016C1D | |
K6X0808C1D-BF55
Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
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CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L | |
K6R1008C1DContextual Info: PRELIMINARY Preliminary PRELIMINARY K6R1008C1D CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. |
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K6R1008C1D 128Kx8 32-TSOP2-400CF 002MIN K6R1008C1D | |
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44-SOJ
Abstract: K6R1004C1D
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K6R1004C1D 256Kx4 32-SOJ-400 44-SOJ K6R1004C1D | |
MBI5024
Abstract: dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963
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CS8816 CS8826 MBI5024 MBI5026 DM134 DM135 DM13C TB62706 TB62726 MAX6969 dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963 | |
K6R1016C1D
Abstract: K6R1004V1D
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K6R1004V1D 64Kx16 100mA 32-SOJ-400 K6R1016C1D K6R1004V1D | |
K6R1016C1D-UContextual Info: PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 0.3 Initial release with Preliminary. |
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K6R1016C1D 64Kx16 002MIN 35/Typ. 55/Typ. K6R1016C1D-U | |
K6R1008C1D
Abstract: DSA00199284
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K6R1008C1D 128Kx8 32-TSOP2-400CF 002MIN K6R1008C1D DSA00199284 | |
K6R1004V1DContextual Info: PRELIMINARY PRELIMINARY for AT&T K6R1004V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. |
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K6R1004V1D 64Kx16 100mA 32-SOJ-400 K6R1004V1D | |
K6R1008C1D
Abstract: K6R1008 44-SOJ K6R1016 K6R1008C1DT 32-SOJ-400 32-TSOP2-400CF
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K6R1008C1D 128Kx8 32-TSOP2-400CF 047MAX 002MIN K6R1008C1D K6R1008 44-SOJ K6R1016 K6R1008C1DT 32-SOJ-400 32-TSOP2-400CF | |
K6R1016C1DContextual Info: PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. Rev. Rev. Rev. Initial release with Preliminary. Page 4, DC operation condition modify |
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K6R1016C1D 64Kx16 55/Typ. 35/Typ. K6R1016C1D | |
K6R1016V1DContextual Info: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify |
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K6R1016V1D 64Kx16 100mA 55/Typ. 35/Typ. K6R1016V1D | |
K6R1004V1D
Abstract: K6R1016
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K6R1004V1D 64Kx16 100mA 32-SOJ-400 K6R1004V1D K6R1016 |