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    K4S56163LF Price and Stock

    Samsung Semiconductor K4S56163LF-XG75

    16MX16 SYNCHRONOUS DRAM, 5.4NS, PBGA54
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K4S56163LF-XG75 1,735
    • 1 $11.6
    • 10 $11.6
    • 100 $11.6
    • 1000 $5.8
    • 10000 $5.8
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    K4S56163LF Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S56163LF Samsung Electronics Original PDF
    K4S56163LF-F1H Samsung Electronics Original PDF
    K4S56163LF-F1L Samsung Electronics Original PDF
    K4S56163LF-F75 Samsung Electronics Original PDF
    K4S56163LF-G Samsung Electronics Original PDF
    K4S56163LF-L Samsung Electronics Original PDF
    K4S56163LF-N Samsung Electronics Original PDF
    K4S56163LF-XE Samsung Electronics Original PDF

    K4S56163LF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S56163LF - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		K4S56163LF 16Bit 54BOC PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S56163LF - X Z E/N/G/C/L/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		K4S56163LF 16Bit 54BOC PDF

    K4S56163LF

    Abstract: L7505
    Text: K4S56163LF - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		K4S56163LF 16Bit 54BOC L7505 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    Untitled

    Abstract: No abstract text available
    Text: Mobile DRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RG(S) Preliminary CMOS SDRAM 16Mx16 Mobile DRAM (TCSR option support) Revision 0.3 October 2001 Rev. 0.3 Oct. 2001 Mobile DRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RG(S) Preliminary CMOS SDRAM Revision History


    Original     		K4S56163LC-RG 16Mx16 256Mb 200us. PDF