K4S1G0632M Search Results

K4S1G0632M Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S1G0632M-TC1H		Samsung Electronics	64M x 4 Bit x 4 Banks Synchronous DRAM		Original	PDF

K4S1G0632M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4S1G0632M-TC1H Contextual Info: K4S1G0632M CMOS SDRAM Stacked 1Gbit SDRAM 64M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec.2001 K4S1G0632M CMOS SDRAM Revision History	Original	K4S1G0632M K4S1G0632M 864words K4S1G0632M-TC1H	PDF
PC133 registered reference design Abstract: SS86 Contextual Info: Preliminary PC133/PC100 Low profile Registered DIMM M390S5658MTU M390S5658MTU SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MTU is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Sam-	Original	M390S5658MTU M390S5658MTU PC133/PC100 256Mx72 256Mx4, 256Mx4 400mil 18-bits PC133 registered reference design SS86	PDF
DIN 7340 Abstract: B1a12 M390S5658MT1 M390S5658MT1-C75 PC133 registered reference design 256Mx4 Contextual Info: Preliminary PC133 Registered DIMM M390S5658MT1 M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 consists of eighteen CMOS Stacked	Original	PC133 M390S5658MT1 M390S5658MT1 256Mx72 256Mx4, 256Mx4 400mil 18-bits DIN 7340 B1a12 M390S5658MT1-C75 PC133 registered reference design	PDF
M377S5658MT3 Abstract: M377S5658MT3-C1H M377S5658MT3-C1L 256Mx4 Contextual Info: Preliminary PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked	Original	PC100 M377S5658MT3 M377S5658MT3 256Mx72 256Mx4, 256Mx4 400mil 18-bits M377S5658MT3-C1H M377S5658MT3-C1L	PDF
DIN 7340 Abstract: M390S5658MT1 M390S5658MT1-C75 PC133 registered reference design Contextual Info: M390S5658MT1 PC133 Registered DIMM M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 consists of eighteen CMOS Stacked	Original	M390S5658MT1 PC133 M390S5658MT1 256Mx72 256Mx4, 256Mx4 400mil 18-bits DIN 7340 M390S5658MT1-C75 PC133 registered reference design	PDF
DIN 7340 Abstract: B1A10 M390S5658MTU M390S5658MTU-C1H M390S5658MTU-C1L M390S5658MTU-C75 PC133 registered reference design b1a12 Contextual Info: Preliminary PC133/PC100 Low profile Registered DIMM M390S5658MTU M390S5658MTU SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MTU is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MTU consists of eighteen CMOS Stacked	Original	PC133/PC100 M390S5658MTU M390S5658MTU 256Mx72 256Mx4, 256Mx4 400mil 18-bits DIN 7340 B1A10 M390S5658MTU-C1H M390S5658MTU-C1L M390S5658MTU-C75 PC133 registered reference design b1a12	PDF
M377S5658MT3-C1H Abstract: M377S5658MT3 M377S5658MT3-C1L samsung capacitance Manufacturing location b1a12 Contextual Info: PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked	Original	PC100 M377S5658MT3 M377S5658MT3 256Mx72 256Mx4, 256Mx4 400mil 18-bits M377S5658MT3-C1H M377S5658MT3-C1L samsung capacitance Manufacturing location b1a12	PDF