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    TDK Corporation C1608JB1A106M080AC

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    CAP CER 1UF 10V JB 0603
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    Panasonic Electronic Components EEE-HB1A101P

    CAP ALUM 100UF 20% 10V SMD
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    Panasonic Electronic Components EEE-HB1A101AP

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    B1A10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    B1A-10PK Chicago Miniature Lamp Lamps - Incandescents, Neons, Optoelectronics, LAMP INDICATOR T-3 1/4 120V 10PK Original PDF

    B1A10 Datasheets Context Search

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    b1a12

    Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
    Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit


    Original     		PDF PC133/100 M390S2950MTU M390S2950MTU 128Mx72 128Mx4, 128Mx4 400mil 18bits b1a12 M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


    Original     		PDF PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L

    b1a12

    Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
    Text: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004


    Original     		PDF 256MB, 512MB, 168pin 256Mb 72-bit K4S510632E b1a12 PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A

    CDC2509

    Abstract: Kingmax 256mb Kingmax Semiconductor MPIB63S-68KX3 PC133 registered reference design
    Text: MPIB63S-68KX3 PC-133 256MB 168pin Registered SDRAM DIMM DESCRIPTION The MPIB63S-68KX3 is 32M bit x 72 Synchronous Dynamic RAM high density memory module. The MPIB63S-68KX3 consists of eighteen CMOS 16M x 8 bit with 4 banks Synchronous DRAMs in TinyBGA package, three 18-bits Drive


    Original     		PDF MPIB63S-68KX3 PC-133 256MB 168pin MPIB63S-68KX3 18-bits 24-pin 168-pin CDC2509 Kingmax 256mb Kingmax Semiconductor PC133 registered reference design

    MA2180

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)


    Original     		PDF KMM377S6450AT2 KMM377S6450AT2 64Mx72 64Mx4, 64Mx4 400mil 18-bits

    Untitled

    Abstract: No abstract text available
    Text: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S6428T3 PC100 Registered DIMM KMM377S6428T3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD


    Original     		PDF KMM377S6428T3 PC100 KMM377S6428T3 64Mx72 64Mx4, 64Mx4

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF KMM377S2858AT3 KMM377S2858AT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin

    Untitled

    Abstract: No abstract text available
    Text: M390S6450CT1 PC133 Registered DIMM M390S6450CT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450CT1 is a 64M bit x 72 Synchronous


    Original     		PDF M390S6450CT1 PC133 M390S6450CT1 64Mx72 64Mx4, 64Mx4 400mil 18-bits

    Untitled

    Abstract: No abstract text available
    Text: M390S2858CT1 PC133 Registered DIMM M390S2858CT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858CT1 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858CT1 consists of eighteen CMOS Stacked


    Original     		PDF M390S2858CT1 PC133 M390S2858CT1 128Mx72 128Mx4, 128Mx4 400mil 18-bits

    CDC2509

    Abstract: KM44S16030BT
    Text: Preliminary KMM378S3227BT SDRAM MODULE KMM378S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM378S3227BT consists of eighteen CMOS Stacked


    Original     		PDF KMM378S3227BT KMM378S3227BT 32Mx72 32Mx4, KMM378S3227BT-G8 KMM378S3227BT-GH KMM378S3227BT-GL KMM378S3227BT-G0 CDC2509 KM44S16030BT

    M377S6428AT3-C1H

    Abstract: M377S6428AT3-C1L
    Text: M377S6428AT3 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S6428AT3 PC100 Registered DIMM M377S6428AT3 SDRAM DIMM (Intel 1.2 ver Base)


    Original     		PDF M377S6428AT3 PC100 M377S6428AT3 64Mx72 64Mx4, 64Mx4 M377S6428AT3-C1H M377S6428AT3-C1L

    KMM377S6450AT3-GL

    Abstract: KMM377S6450AT3-GH
    Text: SDRAM MODULE KMM377S6450AT3 KMM377S6450AT3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT3 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT3 consists of eighteen CMOS 64Mx4


    Original     		PDF KMM377S6450AT3 KMM377S6450AT3 64Mx72 64Mx4, 64Mx4 400mil 18-bits 24-pin KMM377S6450AT3-GL KMM377S6450AT3-GH

    KMM377S6428T3-GH

    Abstract: KMM377S6428T3-GL
    Text: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Revision 0.2 (April 29, 2000) - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice."


    Original     		PDF KMM377S6428T3 PC100 KMM377S6428T3 64Mx72 64Mx4, 64Mx4 KMM377S6428T3-GH KMM377S6428T3-GL

    CDC2509

    Abstract: M377S3323CT0-C1H M377S3323CT0 M377S3323CT0-C1L
    Text: PC100 Registered DIMM M377S3323CT0 M377S3323CT0 SDRAM DIMM Intel 1.2 ver Base 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3323CT0 is a 32M bit x 72 Synchronous


    Original     		PDF PC100 M377S3323CT0 M377S3323CT0 32Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509 M377S3323CT0-C1H M377S3323CT0-C1L

    KMM377S1620CT3-GL

    Abstract: CDC2509
    Text: SDRAM MODULE KMM377S1620CT3 KMM377S1620CT3 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S1620CT3 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S1620CT3 consists of eighteen CMOS 16Mx4


    Original     		PDF KMM377S1620CT3 KMM377S1620CT3 16Mx72 16Mx4, 16Mx4 400mil 18-bits 24-pin KMM377S1620CT3-GL CDC2509

    D1U eeprom

    Abstract: KMM390S6428T-GA KMM390S6428T PC133 registered reference design
    Text: KMM390S6428T Preliminary PC133 SDRAM MODULE Revision History Revision 0 Feb. 1999 • PC133 first published REV. 0 Feb. 1999 Preliminary PC133 SDRAM MODULE KMM390S6428T KMM390S6428T SDRAM DIMM (RCC 0.8ver. Base) 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD


    Original     		PDF KMM390S6428T PC133 KMM390S6428T 64Mx72 64Mx4, D1U eeprom KMM390S6428T-GA PC133 registered reference design

    KMM390S2858AT1-GA

    Abstract: d14l PC133 registered reference design
    Text: KMM390S2858AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions


    Original     		PDF KMM390S2858AT1 PC133 KMM390S2858AT1 128Mx72 128Mx4, KMM390S2858AT1-GA d14l PC133 registered reference design

    PC133 registered reference design

    Abstract: KMM390S6450AT1-GA
    Text: KMM390S6450AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions


    Original     		PDF KMM390S6450AT1 PC133 KMM390S6450AT1 64Mx72 64Mx4, PC133 registered reference design KMM390S6450AT1-GA

    b1a12

    Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
    Text: 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004


    Original     		PDF 512MB, 168pin 512Mb 72-bit M390S6553BT1-C7A 512MB b1a12 K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832

    Untitled

    Abstract: No abstract text available
    Text: M390S6450DT1 PC133 Registered DIMM M390S6450DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DT1 is a 64M bit x 72 Synchronous


    Original     		PDF M390S6450DT1 PC133 M390S6450DT1 64Mx72 64Mx4, 64Mx4 400mil 18-bits

    M390S2858CT1

    Abstract: M390S2858CT1-C7A M390S2858CT1-C7C PC133 registered reference design K4S510632C-TC75 B1A1
    Text: M390S2858CT1 PC133 Registered DIMM M390S2858CT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858CT1 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858CT1 consists of eighteen CMOS Stacked


    Original     		PDF M390S2858CT1 PC133 M390S2858CT1 128Mx72 128Mx4, 128Mx4 400mil 18-bits M390S2858CT1-C7A M390S2858CT1-C7C PC133 registered reference design K4S510632C-TC75 B1A1

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM KMM377S2858AT3 Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM377S2858AT3 PC100 118DIA 000DIA 128Mx4 KM44S28238AT

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S2858BT1 PC133 Registered DIMM Revision History Revision 0.0 May. 2000 • PC133 first published REV. 0 May. 2000 M390S2858BT1 PC133 Registered DIMM M390S2858BT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD


    Original     		PDF M390S2858BT1 PC133 M390S2858BT1 128Mx72 128Mx4, PC133 registered reference design