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    K3466 Price and Stock

    Toshiba America Electronic Components 2SK3466(TE24L,Q)

    MOSFET N-CH 500V 5A 4TFP
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    DigiKey 2SK3466(TE24L,Q) Reel
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    Vishay Intertechnologies CRCW040230R1FKED

    Thick Film Resistors - SMD 1/16watt 30.1ohms 1%
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    TTI CRCW040230R1FKED Reel 1,140,000 10,000
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    Dialight 5640100217F

    LED Circuit Board Indicators CBI 3MM TRE LEVEL
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    TTI 5640100217F Bulk 235
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    K3466 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3466

    Abstract: k3466
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466 k3466

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466

    2SK3466

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466

    K346

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 K346

    2SK3466

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466

    2SK3466

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466

    2SK3466

    Abstract: transistor MJ 122
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) · High forward transfer admittance: ïYfsï = 4.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466 transistor MJ 122

    tc 122 25 5

    Abstract: 2SK3466
    Text: K3466 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3466 ○ チョッパレギュレータ用 • 単位: mm : RDS (ON) = 1.35 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		PDF 2SK3466 20070701-JA tc 122 25 5 2SK3466

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: Yfs = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK3466

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK3466

    2SK3466

    Abstract: k3466 tc 122 25 5
    Text: K3466 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3466 ○ チョッパレギュレータ用 • 単位: mm : RDS (ON) = 1.35 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		PDF 2SK3466 2SK3466 k3466 tc 122 25 5

    SK3858

    Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
    Text: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band


    OCR Scan     		PDF T02bfl bv180 SK3715 SK3275 SK3716A SK3717 SK3718 SK3719 T-041 SK3840 SK3858 SK3854 SK3466 SK3747 SK3836 SK3839 SK3861 SK3859 SK3722