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    K346 Search Results

    K346 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SK346 Coilcraft Inc Super Kit, 0603PS chip inductors, RoHS Visit Coilcraft Inc
    HM2DK3467PLF Amphenol Communications Solutions Millipacs Accessories Discrimination Key having colour SLATE GREY,PLUG MODULE and ROHS COMPLIANT Visit Amphenol Communications Solutions
    HM2DK3467RLF Amphenol Communications Solutions Millipacs Accessories Discrimination Key having colour LIGHT GREEN,RECEPTACLE MODULE and ROHS COMPLIANT Visit Amphenol Communications Solutions
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    K346 Price and Stock

    VPG Transducers MAY1K3460D

    MAY1K3460D 2.5 PPM
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    DigiKey MAY1K3460D Bulk 20
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    Avnet Americas MAY1K3460D Bulk 20
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    • 1000 $6.192
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    3M Interconnect M3UUK-3460K

    IDC CABLE - MKS34K/MC34F/MKS34K
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    DigiKey M3UUK-3460K Bulk 1
    • 1 $39.48
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    3M Interconnect M3DRK-3460K

    IDC CABLE - MKR34K/MC34F/MPR34K
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    DigiKey M3DRK-3460K Bulk 1
    • 1 $48.43
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    • 100 $29.558
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    3M Interconnect M3TKK-3460K

    IDC CABLE - MSD34K/MC34F/MPK34K
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    DigiKey M3TKK-3460K Bulk 1
    • 1 $43.07
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    3M Interconnect M3URK-3460K

    IDC CABLE - MKS34K/MC34F/MPR34K
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    DigiKey M3URK-3460K Bulk 1
    • 1 $48.72
    • 10 $37.716
    • 100 $29.7387
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    Find more K346 price and stock on Findchips.com

    K346 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K3460B1EB1 Microsemi Single Phase Bridge Scan PDF
    K3460B1EB1 Microsemi Silicon Power Rectifier Assemblies Scan PDF
    K3460B1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460B1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460C1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460C1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460D1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460D1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460H1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460H1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460M1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460M1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460N1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460N1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460Q1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460Q1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460V1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460V1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460W1EB1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF
    K3460W1EN1S Microsemi Silicon Power Rectifier Assemblies - Plate Heatsink Scan PDF

    K346 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN 17820 IC

    Abstract: an 17828 an 17827 AN 17821 A k3460 AN 17821 17815
    Text: Single Phase Bridges Part Number X34100B1N1-S X34120B1B1 X34120B1B1-S X34120B1N1 X34120B1N1-S X34160B1B1 X34160B1B1-S X34160B1N1 X34160B1N1-S K3420B1EB1 K3420C1EB1 K3440B1EB1 K3440C1EB1 K3460B1EB1 K3460C1EB1 K3480B1EB1 K3480C1EB1 K34100B1EB1 K34100C1EB1 K34120B1EB1


    OCR Scan     		B1P-10 AN 17820 IC an 17828 an 17827 AN 17821 A k3460 AN 17821 17815 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 PDF

    2SK3466

    Abstract: k3466
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 k3466 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 PDF

    k3462

    Abstract: No abstract text available
    Text: K3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 k3462 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 PDF

    k3462

    Abstract: No abstract text available
    Text: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS


    Original     		2SK3462 20controlled k3462 PDF

    2SK3466

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 PDF

    K346

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 K346 PDF

    2SK3466

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 PDF

    2SK3462

    Abstract: K3462
    Text: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 2SK3462 K3462 PDF

    2SK3466

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 PDF

    2SK3466

    Abstract: transistor MJ 122
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) · High forward transfer admittance: ïYfsï = 4.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 transistor MJ 122 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data sheet. VSPC 1CL PW 24V EX Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-292083 www.weidmueller.com Analogue signal / CL current loop protection includes the following signals:


    Original     		D-32758 PDF

    Untitled

    Abstract: No abstract text available
    Text: VMO 550-01F VDSS Id25 HiPerFET MOSFET Module ^ D S o n = 100V “ 590 A “ 2 .1 m O N-Channel Enhancement Mode Preliminary Data (pS Maximum Ratings Symbol Test Conditions vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100


    OCR Scan     		550-01F PDF

    tc 122 25 5

    Abstract: 2SK3466
    Text: K3466 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3466 ○ チョッパレギュレータ用 • 単位: mm : RDS (ON) = 1.35 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		2SK3466 20070701-JA tc 122 25 5 2SK3466 PDF

    k3462

    Abstract: 2SK3462 K346
    Text: K3462 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3462 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 5.2 ± 0. 2 • 4 V 駆動です。 • オン抵抗が低い。


    Original     		2SK3462 SC-64 k3462 2SK3462 K346 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: Yfs = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		2SK3466 PDF

    k3462

    Abstract: 2Sk3462
    Text: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS


    Original     		2SK3462 k3462 2Sk3462 PDF

    SK3858

    Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
    Text: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band


    OCR Scan     		T02bfl bv180 SK3715 SK3275 SK3716A SK3717 SK3718 SK3719 T-041 SK3840 SK3858 SK3854 SK3466 SK3747 SK3836 SK3839 SK3861 SK3859 SK3722 PDF

    K3462

    Abstract: 2SK3462
    Text: K3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • · · · · Unit: mm 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 K3462 2SK3462 PDF

    k3462

    Abstract: 2SK3462
    Text: K3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3462 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 k3462 2SK3462 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: K3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		2SK3466 PDF