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    K13A50DA Price and Stock

    Toshiba America Electronic Components TK13A50DA(STA4,Q,M

    MOSFET N-CH 500V 12.5A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK13A50DA(STA4,Q,M Tube 13 1
    • 1 $3.06
    • 10 $3.06
    • 100 $3.06
    • 1000 $1.13353
    • 10000 $1.0925
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    Mouser Electronics TK13A50DA(STA4,Q,M 4
    • 1 $3
    • 10 $2.78
    • 100 $1.41
    • 1000 $1.09
    • 10000 $1.09
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    Toshiba America Electronic Components TK13A50DA(STA4

    Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK13A50DA(STA4,Q,M)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK13A50DA(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.30226
    • 1000 $1.1799
    • 10000 $1.1799
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    K13A50DA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: K13A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK13A50DA PDF

    k13a50da

    Abstract: TK13A50DA k13a50 K13A K13A50D
    Text: K13A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK13A50DA SC-67 2-10U1B 20070701-JA k13a50da TK13A50DA k13a50 K13A K13A50D PDF

    k13a50da

    Abstract: k13a50 TK13A50DA K13A50D
    Text: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50da k13a50 TK13A50DA K13A50D PDF

    k13a50

    Abstract: K13A50DA K13A50D K13A TK13A50DA
    Text: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50 K13A50DA K13A50D K13A TK13A50DA PDF

    k13a50da

    Abstract: K13A50D
    Text: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50da K13A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA PDF

    k13a50da

    Abstract: No abstract text available
    Text: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50da PDF