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    K13A50 Price and Stock

    Toshiba America Electronic Components TK13A50D(STA4,Q,M)

    MOSFET N-CH 500V 13A TO220SIS
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    DigiKey TK13A50D(STA4,Q,M) Tube 110 1
    • 1 $3.6
    • 10 $3.6
    • 100 $1.6489
    • 1000 $1.24975
    • 10000 $1.22375
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    Avnet Americas TK13A50D(STA4,Q,M) Tube 32 Weeks 50
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    • 100 $1.14543
    • 1000 $1.08669
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    Mouser Electronics TK13A50D(STA4,Q,M)
    • 1 $3.42
    • 10 $3.31
    • 100 $1.64
    • 1000 $1.27
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    EBV Elektronik TK13A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK13A50DA(STA4,Q,M

    MOSFET N-CH 500V 12.5A TO220SIS
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    DigiKey TK13A50DA(STA4,Q,M Tube 13 1
    • 1 $3.31
    • 10 $3.31
    • 100 $1.5288
    • 1000 $1.13353
    • 10000 $1.11478
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    Avnet Americas TK13A50DA(STA4,Q,M Tube 32 Weeks 50
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    • 100 $1.02258
    • 1000 $0.97014
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    Mouser Electronics TK13A50DA(STA4,Q,M 3
    • 1 $3.31
    • 10 $2.86
    • 100 $1.53
    • 1000 $1.14
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    Toshiba America Electronic Components TK13A50DA(STA4

    Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK13A50DA(STA4,Q,M)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK13A50DA(STA4 Tube 32 Weeks 50
    • 1 -
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    • 100 $1.02258
    • 1000 $0.97014
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    Toshiba America Electronic Components TK13A50D(STA4QM)

    Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK13A50D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK13A50D(STA4QM) Tube 32 Weeks 50
    • 1 -
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    • 100 $1.14543
    • 1000 $1.08669
    • 10000 $1.08669
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    Toshiba America Electronic Components TK13A50DQ

    SILICON N CHANNEL MOS TYPE (PI-MOS VII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK13A50DQ 250
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    K13A50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: K13A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK13A50DA PDF

    k13a50da

    Abstract: TK13A50DA k13a50 K13A K13A50D
    Contextual Info: K13A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K13A50DA ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK13A50DA SC-67 2-10U1B 20070701-JA k13a50da TK13A50DA k13a50 K13A K13A50D PDF

    k13a50da

    Abstract: k13a50 TK13A50DA K13A50D
    Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50da k13a50 TK13A50DA K13A50D PDF

    K13A50D transistor

    Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D
    Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D K13A50D transistor K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D PDF

    K13A50D transistor

    Abstract: k13a50 K13A50D TK13A50D K*A50D
    Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D K13A50D transistor k13a50 K13A50D TK13A50D K*A50D PDF

    k13a50

    Abstract: K13A50DA K13A50D K13A TK13A50DA
    Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50 K13A50DA K13A50D K13A TK13A50DA PDF

    k13a50da

    Abstract: K13A50D
    Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50da K13A50D PDF

    Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA PDF

    K13A50D

    Abstract: TK13A50D VDD200 k13a50 K*A50D
    Contextual Info: K13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)


    Original     		TK13A50D K13A50D TK13A50D VDD200 k13a50 K*A50D PDF

    k13a50da

    Contextual Info: K13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK13A50DA k13a50da PDF

    Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D PDF

    K13A50D 2.0 transistor

    Abstract: K13A50D transistor K13A50D
    Contextual Info: K13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D K13A50D 2.0 transistor K13A50D transistor K13A50D PDF

    K13A50D

    Abstract: tk13a50d k13a50 k13a
    Contextual Info: K13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)


    Original     		TK13A50D K13A50D tk13a50d k13a50 k13a PDF