K 30 TRANSISTOR Search Results

K 30 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

K 30 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PDTA115EE Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ	Original	PDF	PDTA115E R75/03/pp14 PDTA115EE
PDTA115EE Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89 Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ	Original	PDF	PDTA115E R75/03/pp14 PDTA115EE PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
k 1225 Abstract: Dissipateur AUSTERLITZ k 351 heatsink Austerlitz Text: austerlitz electronic Kühlkörper für Plastik-Transistoren Heat sinks for plastic transistors Dissipateurs pour transistors en plastique K 12-25 R th K/ W: 30 Material: AL 1,5 Oberfläche: schwarz eloxiert Gewicht g : 5 Gehäuse: SOT 32 Bestell-Nr.: K 12-25	Original	PDF
TO-92 plastic package transistors Abstract: PDTA115EE SOT323 reflow sot883 PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product specification Supersedes data of 2004 May 05 2004 Jul 30 Philips Semiconductors Product specification PNP resistor-equipped transistors;	Original	PDF	PDTA115E SCA76 R75/03/pp14 TO-92 plastic package transistors PDTA115EE SOT323 reflow sot883 PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET
PDTC144TE Abstract: PDTA144 Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144T series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open Product specification Supersedes data of 2003 Oct 30 2004 Apr 27 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open	Original	PDF	PDTA144T SCA76 R75/02/pp14 PDTC144TE PDTA144
Darlington Transistor Abstract: MPSA13 MPSA14 Text: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V	Original	PDF	MPSA13/14 100mA, MPSA13 MPSA14 100MHz, Darlington Transistor MPSA13 MPSA14
MPC555 Abstract: QADC64 Text: TRANSPORTATION SYSTEMS GROUP CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC555.K Mask Set: 01K02A General Business Use Report Generated: Thu Mar 30, 2000, 13:53:03 Page 1 = \| MPC555.K 01K02A Modules \|	Original	PDF	MPC555 01K02A 01K02A QADC64
PEMB1 Abstract: No abstract text available Text: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.	Original	PDF	PEMB11; PUMB11 PEMB11 PUMB11 OT666 OT363 SC-88 PEMH11 PUMH11 AEC-Q101 PEMB1
PEMB1 Abstract: No abstract text available Text: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.	Original	PDF	PEMB11; PUMB11 PEMB11 OT666 OT363 PEMH11 SC-88 PUMH11 PEMB11 PEMB1
MPSA14 Abstract: MPSA13 Text: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage	Original	PDF	MPSA13/14 1000I MPSA14 MPSA13
digital potentiometer 150k Abstract: 47K variable resistor amplitude controlled Wien Bridge Oscillator ct Potentiometer r2b diode making code AD5280B50 20k preset variable resistor 4.7pF Potentiometer Linear 3-terminal regulator, high PSRR pin configuration 20K potentiometer pin 3 Text: a 15 V, I2C Compatible 256-Position Digital Potentiometers AD5280/AD5282* FEATURES 256 Position AD5280: 1-Channel AD5282: 2-Channel Independently Programmable Potentiometer Replacement 20 k⍀, 50 k⍀, 200 k⍀ Low Temperature Coefficient 30 ppm/°C Internal Power-On Midscale Preset	Original	PDF	256-Position AD5280/AD5282* AD5280: AD5282: RU-14) C02929 MO-153AB-1 16-Lead RU-16) MO-153AB digital potentiometer 150k 47K variable resistor amplitude controlled Wien Bridge Oscillator ct Potentiometer r2b diode making code AD5280B50 20k preset variable resistor 4.7pF Potentiometer Linear 3-terminal regulator, high PSRR pin configuration 20K potentiometer pin 3
MAC12SM Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97 Text: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA	Original	PDF	O-226AA) 2N5060 2N5061 2N5062 2N5064 MCR100-3 MCR100-4 MCR100-6 MCR100-8 OT-223 MAC12SM MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
ADCM371 Abstract: Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512 Text: FUNCTIONAL BLOCK DIAGRAM FEATURES 128 positions 10 kΩ, 50 kΩ, 100 kΩ +5 V to +30 V single-supply operation ±5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface THD 0.006% typical Programmable preset1 Power shutdown: less than 1 µA	Original	PDF	128-Position AD7376 AD73762 TSSOP-14 PR01119-0-7/05 ADCM371 Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512
PDTB123Y Abstract: No abstract text available Text: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.	Original	PDF	PDTB123YT O-236AB) PDTD123YT. AEC-Q101 BC807 PDTB123Y

BC807 Abstract: PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT Text: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.	Original	PDF	PDTB123YT O-236AB) PDTD123YT. AEC-Q101 BC807 PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT
bc 7-25 pnp Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30	OCR Scan	PDF	1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
3819 Abstract: 80424 T072 Text: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 PN 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: Speciality Polymer Aluminum Electrolytic Capacitors Typical Data Surface Mount Type_ Application Guidelines Frequency Characteristics 100 300 3K 6K 10*. 30 K 60 K 100 K 300 K 6 0 0 K IM 3W 6M 10M 3CM Frequency Hzi 1. Circuit Design	OCR Scan	PDF
BFR 450 Abstract: bfr 135 BFR180W BFS17P BFS17W BFT92 BFT93 BFT92P bfr194 193W Text: Transistoren Transistors HF-Transistoren Forts. RF-Transistors (cont'd) BFR 92P Chara<;teristics (TA = 25 °C) Maximum Ratings Type N = NPN P = PNP N ^C EO k P \Ot fr F k V mA mW GHz dB mA V 15 30 280 30 Vce 5.00 1.5 2 280 5.00 1.5 1.7 1.7 ▼ BFR92W N 15	OCR Scan	PDF	OT-23 OT-323 BFR180W BFR 450 bfr 135 BFS17P BFS17W BFT92 BFT93 BFT92P bfr194 193W
H 13003 Abstract: SH 13003 13003 sd transistors 13003 SA5055 H13003 Text: TRANSISTORS FUNCTION GUIDE 2.1.2 D -P A C K Type T ran sisto rs lc Device Type A VcEO (V) NPN PNP 0.5 300 K SH 3 40 K SH 3 50 1 40 K SH 2 9 K SH 3 0 KSH 30C Condition Condition Ve V ce (V) 10 lc (A) 0.05 lc (A) Ib (A) MIN MAX 30 240 4 1 15 75 1 V CE(sat)(V)	OCR Scan	PDF	KSA1241 H 13003 SH 13003 13003 sd transistors 13003 SA5055 H13003
BCY55 Abstract: "bcy 55" "dual TRANSISTORs" "Differential Amplifier" transistor t05 Text: Compound Devices N P N Dual Transistors in 6 lead T 0 5 Encapsulation Type Characteristics at T am\|D = 25°C Maxim um ratings 'C/M mA Pto f1 W hF E {V C E n C i V/uA hF E 1 lh F E 2 V N K T 6003 40 30 0.15 100 (5/101 0.83 .1.2 N K T 6010 40 30 0.15 100 (5/101	OCR Scan	PDF
OTC4330 Abstract: 2N6563 2N6561 OTC4530 OTC453Q SVT7600 SVT7601 SVT7602 Text: MAE D OPTEK TECHNOLOGY INC bTTfiSaO ODDlHfl? 4TS • OTK ■ ProductBulMlnQTC4530 duct Built August 1990 U K Ifc K Fast Switching NPN Power Transistor Type OTC453Q T-ss-n 300V, 30 A ■ a Applications • High Frequency Switching Regulators • Class "D" Amplifiers and Converters	OCR Scan	PDF	OTC4530 OTC453Q OTC4330 Vcc-150V, 300nsec, 2N6561, 2N6563, SVT7600, SVT7601, OTC4330 2N6563 2N6561 SVT7600 SVT7601 SVT7602
D38S5 Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,	OCR Scan	PDF	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S3' D38S5 hitachi 16 X 2 lcd 2N5232A
IC 7500 Abstract: MOC3002 MOC3003 MOC3007 MOTOROLA SCR 1Ft TRANSISTOR H11C1 4N39 H11AA1 H11AA2 Text: OPTOELECTRONICS — COUPLERS/ISOLATORS continued SCR Output — Style 7 Device Peak Blocking Voltage LED Trigger Current-lp-\|(VA k = 50 V) Min Volts mA Max Industry Motorola 200 200 200 200 200 200 250 250 200 30 20 20 30 (TTL drive) 14(VAk = 100) 30 20	OCR Scan	PDF	H11C1 H11C2 H11C3 H74C1 MOC3002 MOC3003 MOC3007 IC 7500 MOTOROLA SCR 1Ft TRANSISTOR 4N39 H11AA1 H11AA2

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K 30 TRANSISTOR Search Results

K 30 TRANSISTOR Result Highlights (5)

K 30 TRANSISTOR Datasheets Context Search

PDTA115EE

PDTA115EE

k 1225

TO-92 plastic package transistors

PDTC144TE

Darlington Transistor

MPC555

PEMB1

PEMB1

MPSA14

digital potentiometer 150k

MAC12SM

ADCM371

PDTB123Y

BC807

bc 7-25 pnp

3819

Untitled

BFR 450

H 13003

BCY55

OTC4330

D38S5

IC 7500