K 30 TRANSISTOR Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

3819

Abstract: 80424 T072
Contextual Info: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 PN 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15

PDTA115EE

Contextual Info: DISCRETE SEMICONDUCTORS DAT PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

PDTA115EE

Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

k 1225

Abstract: Dissipateur AUSTERLITZ k 351 heatsink Austerlitz
Contextual Info: austerlitz electronic Kühlkörper für Plastik-Transistoren Heat sinks for plastic transistors Dissipateurs pour transistors en plastique K 12-25 R th K/ W: 30 Material: AL 1,5 Oberfläche: schwarz eloxiert Gewicht g : 5 Gehäuse: SOT 32 Bestell-Nr.: K 12-25

Contextual Info: Speciality Polymer Aluminum Electrolytic Capacitors Typical Data Surface Mount Type_ Application Guidelines Frequency Characteristics 100 300 3K 6K 10*. 30 K 60 K 100 K 300 K 6 0 0 K IM 3W 6M 10M 3CM Frequency Hzi 1. Circuit Design

BFR 450

Abstract: bfr 135 BFR180W BFS17P BFS17W BFT92 BFT93 BFT92P bfr194 193W
Contextual Info: Transistoren Transistors HF-Transistoren Forts. RF-Transistors (cont'd) BFR 92P Chara<;teristics (TA = 25 °C) Maximum Ratings Type N = NPN P = PNP N ^C EO k P \Ot fr F k V mA mW GHz dB mA V 15 30 280 30 Vce 5.00 1.5 2 280 5.00 1.5 1.7 1.7 ▼ BFR92W N 15

TO-92 plastic package transistors

Abstract: PDTA115EE SOT323 reflow sot883 PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product specification Supersedes data of 2004 May 05 2004 Jul 30 Philips Semiconductors Product specification PNP resistor-equipped transistors;

H 13003

Abstract: SH 13003 13003 sd transistors 13003 SA5055 H13003
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.1.2 D -P A C K Type T ran sisto rs lc Device Type A VcEO (V) NPN PNP 0.5 300 K SH 3 40 K SH 3 50 1 40 K SH 2 9 K SH 3 0 KSH 30C Condition Condition Ve V ce (V) 10 lc (A) 0.05 lc (A) Ib (A) MIN MAX 30 240 4 1 15 75 1 V CE(sat)(V)

PDTC144TE

Abstract: PDTA144
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144T series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open Product specification Supersedes data of 2003 Oct 30 2004 Apr 27 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

Darlington Transistor

Abstract: MPSA13 MPSA14
Contextual Info: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V

MPC555

Abstract: QADC64
Contextual Info: TRANSPORTATION SYSTEMS GROUP CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC555.K Mask Set: 01K02A General Business Use Report Generated: Thu Mar 30, 2000, 13:53:03 Page 1 = | MPC555.K 01K02A Modules |

PEMB1

Contextual Info: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.

PEMB1

Contextual Info: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.

MPSA14

Abstract: MPSA13
Contextual Info: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage

digital potentiometer 150k

Abstract: 47K variable resistor amplitude controlled Wien Bridge Oscillator ct Potentiometer r2b diode making code AD5280B50 20k preset variable resistor 4.7pF Potentiometer Linear 3-terminal regulator, high PSRR pin configuration 20K potentiometer pin 3
Contextual Info: a 15 V, I2C Compatible 256-Position Digital Potentiometers AD5280/AD5282* FEATURES 256 Position AD5280: 1-Channel AD5282: 2-Channel Independently Programmable Potentiometer Replacement 20 k⍀, 50 k⍀, 200 k⍀ Low Temperature Coefficient 30 ppm/°C Internal Power-On Midscale Preset

OTC4330

Abstract: 2N6563 2N6561 OTC4530 OTC453Q SVT7600 SVT7601 SVT7602
Contextual Info: MAE D OPTEK TECHNOLOGY INC bTTfiSaO ODDlHfl? 4TS • OTK ■ ProductBulMlnQTC4530 duct Built August 1990 U K Ifc K Fast Switching NPN Power Transistor Type OTC453Q T-ss-n 300V, 30 A ■ a Applications • High Frequency Switching Regulators • Class "D" Amplifiers and Converters

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

D38S5

Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,

IC 7500

Abstract: MOC3002 MOC3003 MOC3007 MOTOROLA SCR 1Ft TRANSISTOR H11C1 4N39 H11AA1 H11AA2
Contextual Info: OPTOELECTRONICS — COUPLERS/ISOLATORS continued SCR Output — Style 7 Device Peak Blocking Voltage LED Trigger Current-lp-|(VA k = 50 V) Min Volts mA Max Industry Motorola 200 200 200 200 200 200 250 250 200 30 20 20 30 (TTL drive) 14(VAk = 100) 30 20

ADCM371

Abstract: Analog devices code marking AB 7408 mosfet SWA marking AD7376AR50 ADR512
Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES 128 positions 10 kΩ, 50 kΩ, 100 kΩ +5 V to +30 V single-supply operation ±5 V to ±15 V dual-supply operation 3-wire SPI-compatible serial interface THD 0.006% typical Programmable preset1 Power shutdown: less than 1 µA

PDTB123Y

Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

MPC555

Abstract: QADC64 AR588
Contextual Info: MOTOROLA Part: MPC555.K Mask Set: 01K02A Transportation Systems Group Errata Sheet Customer Errata and Information Sheet Transportation Systems Group Part: MPC555.K Mask Set: 01K02A. Report generated 30 March 2000 . TRANSPORTATION SYSTEMS GROUP CUSTOMER ERRATA AND INFORMATION SHEET

BC807

Abstract: PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT
Contextual Info: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.