K 246 TRANSISTOR Search Results

BF246

Abstract: tic 246 h BF 246 tic 246 in 5 246 b BF 246 A
Contextual Info: I 2SC D • 023SbOS QQQM4b4 T « S I E G N-Channel Junction Field-Effect Transistors BF 246 A 25C 0 4 4 6 4 S IE M E N S D A K T IE N G E S E L L S C H A F SE2Î2 5 B F246C BF 2 4 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar

service-mitteilungen

Abstract: stern elite BF-215 radio fernsehen Radio Fernsehen Elektronik bf 194 zk246 sowjetische transistoren PJ-130 BF194
Contextual Info: SERVICE-MITTEILUNGEN SEITE iffläU IR a d i o -television | > //4 1-6 V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N AUSGABE: J U L I Das Stereo-Tonbandgerät ZK 246 ist ein Spitzenerzeugnis der polnischen Konsumgüter-Elektronik, das in einer relativ ge­

PA 1515 transistor

Abstract: 12SW 1519b
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

BF256

Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
Contextual Info: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.

KRC246

Abstract: KRC245
Contextual Info: SEMICONDUCTOR KRC241~KRC246 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES C ・With Built-in Bias Resistors. A ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.

2SC1811

Abstract: 2SA896 138D 2SA1015
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A

k 246 transistor

Abstract: KTC9012S KTC9013S KTC9012 23 marking
Contextual Info: SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage

TIP 34 pnp

Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
Contextual Info: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B

Contextual Info: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N E K G J D MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT Collector-Base Voltage

KTC9012

Abstract: D6491 KTC9012 transistor KTC9013 transistor KTC9013
Contextual Info: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. Complementary to KTC9013. N K E G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage

KTC9012

Contextual Info: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9012. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage

KTC9013 transistor

Abstract: KTC9013 transistor KTC9012 KTC9012
Contextual Info: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. Complementary to KTC9012. N K E G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage

KTC9012S

Abstract: KTC9013S
Contextual Info: SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage

c2688 L

Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A
Contextual Info: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current

TRANSISTOR BC 135

Abstract: KTC9012S KTC9013S transistor bc 144 transistor BC 246
Contextual Info: SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

Contextual Info: STS9012 Semiconductor PNP Silicon Transistor Description • General purpose applicat ion. • Swit ching applicat ion. Features • Excellent h FE linear it y. • Com plem ent ary pair w it h STS9013 Ordering Information Type N O. M a r k in g STS9012 STS9012

Contextual Info: STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose applicat ion. C • Swit ching applicat ion. B Features C B E • Excellent h FE linearit y. • Com plem ent ary pair wit h STS9012 E TO-92 Ordering Information Type N O. STS9013

bd 125 equivalent

Abstract: TIP 41 transistor texas instruments tip35 TIP 29 transistor transistor equivalent of tip 50 TIP 34 c TIP35 TIP 41 EQUIVALENT TIP 29 A transistor TIP 34 pnp
Contextual Info: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH TIP36, TIP36A , TIP36B, TIP36C

TIP34

Abstract: TIP34C equivalent TIP33C TIP34A texas instruments tip34 TIP33 TIP33A TIP33B TIP34B TIP34C
Contextual Info: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-IP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EE D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP33, TIP33A, TIP33B, TIP33C