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    K/TESLA SEMICONDUCTOR Search Results

    K/TESLA SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K/TESLA SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    variable resistor 104

    Abstract: Q65412-L100
    Text: Differential Magneto Resistor FP 412 L 100 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction


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    PDF Q65412-L100 R01-2 R02-3 variable resistor 104 Q65412-L100

    TESLA 1

    Abstract: 104Gauss
    Text: Differential Magneto Resistor FP 412 D 250 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction


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    PDF Q65412-D R01-3, R04-6 R01-2 R02-3 TESLA 1 104Gauss

    Q65420-L90

    Abstract: Q65420-L0090E001 r046 q65420l90 magneto R023
    Text: Double Differential Magneto Resistor FP 420 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage


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    PDF Q65420-L90 Q65420-L0090E001 R01-2 R02-3 R04-5 R05-6 R01-3, Q65420-L90 Q65420-L0090E001 r046 q65420l90 magneto R023

    magneto resistor

    Abstract: Q65425-L90 R01-3 Q65425-L0090E001 magneto
    Text: Differential Magneto Resistor FP 425 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage


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    PDF Q65425-L90 Q65425-L0090E001 R01-2 R02-3 R04-5 R05-6 R01-3, magneto resistor Q65425-L90 R01-3 Q65425-L0090E001 magneto

    Q65110-L80F

    Abstract: Q65410-L80E TESLA 1
    Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Version 2.0 Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage


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    PDF Q65410-L80E Q65110-L80F R01-2 R02-3 R04-5 R05-6 R01-3, Q65110-L80F Q65410-L80E TESLA 1

    Q65110-L80F

    Abstract: Q65410-L80E
    Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Dimensions in mm Features Typical applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage


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    PDF Q65410-L80E Q65110-L80F R01-2 R02-3 R04-5 R05-6 R01-3, Q65110-L80F Q65410-L80E

    Q65425-L0090E001

    Abstract: Q65425-L90 R023
    Text: Double Differential Magneto Resistor FP 425 L 90 Version 2.0 // A C 0.55 0.45 0.04 C 1.2 1.2 1.1 1.1 0.65 0.55 3 2) 0.2 max. 0.4 E 3.3 3.1 2.06 1.86 0.396 0.390 0.55 0.45 0.2 max. 0.13) E 1 4 2 5 3 6 D 1.6 pin connection 1 0.2 A B R 1-2 B 5 R 2-3 B R5-6


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    PDF R01-2 R02-3 R04-5 R05-6 R01-3, Q65425-L0090E001 Q65425-L90 R023

    Untitled

    Abstract: No abstract text available
    Text: Double Differential Magneto Resistor FP 420 L 90 B Version 2.0 // 0.4 E 3.3 3.1 1.76 1.56 0.239 0.233 A C 0.55 0.45 D 0.65 0.55 1.2 1.2 1.1 1.1 1 1.6 pin connection 1 0.2 A B 4 4 2 5 5 R 2-3 3 0.475 3) 0.469 0. Punchingpoints R4-5 2 2) 1) B 4 B R5-6 6


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    PDF R01-2 R02-3 R04-5 R05-6 R01-3,

    Tesla

    Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
    Text: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure­ ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.


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    PDF RHY19, SBV525 RHY19 Q61708-Y19 Q64099-V Tesla SBV525 tesla semiconductor asco Q61708 tesla b 100

    tangential

    Abstract: Tesla Q64003-T21
    Text: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.


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    PDF Q64003-T21 tangential Tesla Q64003-T21

    Tesla

    Abstract: SBV595 Hall 300 Q64099
    Text: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system


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    PDF SBV595 SBV595 Q64099-V595 Tesla Hall 300 Q64099

    Q64001

    Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
    Text: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)


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    PDF EA218, FA22e EA218 FA22e Q64001-E218 Q64001-F22E Q64001 f22e Hall 22e Q64001-F22E Tesla

    Hall Siemens sbv 525

    Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
    Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25


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    PDF 023SbOS Q01b3 4099-V TCV20 Hall Siemens sbv 525 K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv

    RHY17

    Abstract: RHY18 Q61708 tesla semiconductor Hall 300
    Text: R H Y17, RHY18 Low-temperature Hall probes RH Y 17 and R H Y 18 are Hall generators for measuring magnetic fields down to —2 6 9 °C. The flat and cylindrical respectively forms are suitable for universal and axial measurements (respectively). They find application in cryology, i.e. super­


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    PDF RHY17, RHY18 RHY17 RHY18 Q61708-Y17 Q61708-Y18 OHY18 Q61708 tesla semiconductor Hall 300

    magnetoresistor

    Abstract: No abstract text available
    Text: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m


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    PDF fl235b05 magnetoresistor

    FC33

    Abstract: S290 Q64003-F FC34 Fc-34 FC32
    Text: FC 32, FC 33, FC34 Field probes FC 32, FC 33, and FC 34 are designed for high-precision measurements of magnetic fields. Temperature coefficients j8 are minimized semiconductor material InAsP . Type Order number FC 32 FC 33 FC 34 Q 640 03 -F 32 Q 640 03 -F 33


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    PDF Q64003-F Q64003-F34 FC33 S290 FC34 Fc-34 FC32

    we381

    Abstract: magneto resistor
    Text: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage


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    PDF Q65410-L80E Q65110-L80F flE35b05 013437b we381 magneto resistor

    SBV579

    Abstract: tesla semiconductor
    Text: SBV579 Hall field probe The field probe SBV 579 is only suited to measure DC magnetic fields. The Hall chip of cross-shaped design ensures a particularly small linearization error semi­ conductor material InAs . The electrical system is protected by a coat of varnish.


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    PDF SBV579 Q64099-V579 1iO05 SBV579 tesla semiconductor

    SBV566

    Abstract: hall generator sbv 566 SBV570
    Text: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there


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    PDF SBV570 Q64099-V570 SBV566 hall generator sbv 566 SBV570

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Double Differential Magneto Resistor FP 420 L 90 1.6 pin connection 2 6 fingers on both sides free of lacquer 3) Center-distance between the Diff.-Systems. Approx, weight 0.2 g GPX06896 Dimensions in mm Features Typical applications • • •


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    PDF GPX06896

    Hall sensors Siemens

    Abstract: hall sensor siemens Siemens Hall K/tesla semiconductor Hall Hall Siemens
    Text: SIEMENS 3.1 Hall-Effect Sensors Fundamentals The Hall effect, so named after its discoverer Edwin Hall in 1879, is the result of the Lorentz force on moving electrons subjected to a magnetic field. Fig. 1a is a representation of the current flow in a material when no magnetic field is present. As


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FP 412 L 100 Differential Magneto Resistor ’ ^Punching—points 00.8 ;=[o.o4ic W o j s ia ; 1) If delivery os tape,separate at punching—poinls 2) Connections on both sides free of lacquer 3) Mechanical connections 4) Center-distance between the Diff,-Systems


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FP 410 L 4x80 FM Double Differential Magneto Resistor •//[(Hie! .6 pin connection {-1 0 .2 5 ] B': 0.25] A] i-[0 '.0 4 [C ] c o ld ii [ B i 1) 2) 3) 4) If delivery as lape, separate a l p u n ch in g -p o in ts Connections on both sides free of lacquer


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    PDF pxo6776

    SBV566

    Abstract: hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator
    Text: D • 023SbOS Q01L373 1 ISIE6 Ferrite Mounted Hall Generator SBV 566 SIEMENS AKTIEN6ESELLSCHAF - Features _LL • Compact size • High sensitivity J= = Q □2.WW»7.S- Typical ap p licatio n s • Current sensing • Position sensing - 12.1


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    PDF 023SbOS Q01L373 20Rem SBV566 hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator