variable resistor 104
Abstract: Q65412-L100
Text: Differential Magneto Resistor FP 412 L 100 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction
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Q65412-L100
R01-2
R02-3
variable resistor 104
Q65412-L100
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TESLA 1
Abstract: 104Gauss
Text: Differential Magneto Resistor FP 412 D 250 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction
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Q65412-D
R01-3,
R04-6
R01-2
R02-3
TESLA 1
104Gauss
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Q65420-L90
Abstract: Q65420-L0090E001 r046 q65420l90 magneto R023
Text: Double Differential Magneto Resistor FP 420 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage
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Q65420-L90
Q65420-L0090E001
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65420-L90
Q65420-L0090E001
r046
q65420l90
magneto
R023
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magneto resistor
Abstract: Q65425-L90 R01-3 Q65425-L0090E001 magneto
Text: Differential Magneto Resistor FP 425 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage
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Q65425-L90
Q65425-L0090E001
R01-2
R02-3
R04-5
R05-6
R01-3,
magneto resistor
Q65425-L90
R01-3
Q65425-L0090E001
magneto
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Q65110-L80F
Abstract: Q65410-L80E TESLA 1
Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Version 2.0 Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage
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Q65410-L80E
Q65110-L80F
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65110-L80F
Q65410-L80E
TESLA 1
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Q65110-L80F
Abstract: Q65410-L80E
Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Dimensions in mm Features Typical applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage
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Q65410-L80E
Q65110-L80F
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65110-L80F
Q65410-L80E
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Q65425-L0090E001
Abstract: Q65425-L90 R023
Text: Double Differential Magneto Resistor FP 425 L 90 Version 2.0 // A C 0.55 0.45 0.04 C 1.2 1.2 1.1 1.1 0.65 0.55 3 2) 0.2 max. 0.4 E 3.3 3.1 2.06 1.86 0.396 0.390 0.55 0.45 0.2 max. 0.13) E 1 4 2 5 3 6 D 1.6 pin connection 1 0.2 A B R 1-2 B 5 R 2-3 B R5-6
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R01-2
R02-3
R04-5
R05-6
R01-3,
Q65425-L0090E001
Q65425-L90
R023
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Untitled
Abstract: No abstract text available
Text: Double Differential Magneto Resistor FP 420 L 90 B Version 2.0 // 0.4 E 3.3 3.1 1.76 1.56 0.239 0.233 A C 0.55 0.45 D 0.65 0.55 1.2 1.2 1.1 1.1 1 1.6 pin connection 1 0.2 A B 4 4 2 5 5 R 2-3 3 0.475 3) 0.469 0. Punchingpoints R4-5 2 2) 1) B 4 B R5-6 6
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R01-2
R02-3
R04-5
R05-6
R01-3,
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Tesla
Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
Text: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.
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RHY19,
SBV525
RHY19
Q61708-Y19
Q64099-V
Tesla
SBV525
tesla semiconductor
asco
Q61708
tesla b 100
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tangential
Abstract: Tesla Q64003-T21
Text: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.
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Q64003-T21
tangential
Tesla
Q64003-T21
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Tesla
Abstract: SBV595 Hall 300 Q64099
Text: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system
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SBV595
SBV595
Q64099-V595
Tesla
Hall 300
Q64099
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Q64001
Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
Text: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)
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EA218,
FA22e
EA218
FA22e
Q64001-E218
Q64001-F22E
Q64001
f22e
Hall 22e
Q64001-F22E
Tesla
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Hall Siemens sbv 525
Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25
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023SbOS
Q01b3
4099-V
TCV20
Hall Siemens sbv 525
K2487
Hall Siemens
hall generator
siemens hall generator
siemens hall probe
siemens sbv
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RHY17
Abstract: RHY18 Q61708 tesla semiconductor Hall 300
Text: R H Y17, RHY18 Low-temperature Hall probes RH Y 17 and R H Y 18 are Hall generators for measuring magnetic fields down to —2 6 9 °C. The flat and cylindrical respectively forms are suitable for universal and axial measurements (respectively). They find application in cryology, i.e. super
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RHY17,
RHY18
RHY17
RHY18
Q61708-Y17
Q61708-Y18
OHY18
Q61708
tesla semiconductor
Hall 300
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magnetoresistor
Abstract: No abstract text available
Text: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m
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fl235b05
magnetoresistor
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FC33
Abstract: S290 Q64003-F FC34 Fc-34 FC32
Text: FC 32, FC 33, FC34 Field probes FC 32, FC 33, and FC 34 are designed for high-precision measurements of magnetic fields. Temperature coefficients j8 are minimized semiconductor material InAsP . Type Order number FC 32 FC 33 FC 34 Q 640 03 -F 32 Q 640 03 -F 33
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Q64003-F
Q64003-F34
FC33
S290
FC34
Fc-34
FC32
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we381
Abstract: magneto resistor
Text: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage
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Q65410-L80E
Q65110-L80F
flE35b05
013437b
we381
magneto resistor
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SBV579
Abstract: tesla semiconductor
Text: SBV579 Hall field probe The field probe SBV 579 is only suited to measure DC magnetic fields. The Hall chip of cross-shaped design ensures a particularly small linearization error semi conductor material InAs . The electrical system is protected by a coat of varnish.
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SBV579
Q64099-V579
1iO05
SBV579
tesla semiconductor
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SBV566
Abstract: hall generator sbv 566 SBV570
Text: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there
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SBV570
Q64099-V570
SBV566
hall generator
sbv 566
SBV570
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Untitled
Abstract: No abstract text available
Text: SIEMENS Double Differential Magneto Resistor FP 420 L 90 1.6 pin connection 2 6 fingers on both sides free of lacquer 3) Center-distance between the Diff.-Systems. Approx, weight 0.2 g GPX06896 Dimensions in mm Features Typical applications • • •
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GPX06896
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Hall sensors Siemens
Abstract: hall sensor siemens Siemens Hall K/tesla semiconductor Hall Hall Siemens
Text: SIEMENS 3.1 Hall-Effect Sensors Fundamentals The Hall effect, so named after its discoverer Edwin Hall in 1879, is the result of the Lorentz force on moving electrons subjected to a magnetic field. Fig. 1a is a representation of the current flow in a material when no magnetic field is present. As
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Untitled
Abstract: No abstract text available
Text: SIEMENS FP 412 L 100 Differential Magneto Resistor ’ ^Punching—points 00.8 ;=[o.o4ic W o j s ia ; 1) If delivery os tape,separate at punching—poinls 2) Connections on both sides free of lacquer 3) Mechanical connections 4) Center-distance between the Diff,-Systems
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Untitled
Abstract: No abstract text available
Text: SIEMENS FP 410 L 4x80 FM Double Differential Magneto Resistor •//[(Hie! .6 pin connection {-1 0 .2 5 ] B': 0.25] A] i-[0 '.0 4 [C ] c o ld ii [ B i 1) 2) 3) 4) If delivery as lape, separate a l p u n ch in g -p o in ts Connections on both sides free of lacquer
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pxo6776
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SBV566
Abstract: hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator
Text: D • 023SbOS Q01L373 1 ISIE6 Ferrite Mounted Hall Generator SBV 566 SIEMENS AKTIEN6ESELLSCHAF - Features _LL • Compact size • High sensitivity J= = Q □2.WW»7.S- Typical ap p licatio n s • Current sensing • Position sensing - 12.1
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023SbOS
Q01L373
20Rem
SBV566
hall generator
K2488
Hall Siemens
sbv 566
siemens hall ferrite
P Ferrite Siemens
Siemens Hall
siemens hall generator
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