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    K/TESLA SEMICONDUCTOR Search Results

    K/TESLA SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K/TESLA SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    variable resistor 104

    Abstract: Q65412-L100
    Text: Differential Magneto Resistor FP 412 L 100 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction


    Original     		PDF Q65412-L100 R01-2 R02-3 variable resistor 104 Q65412-L100

    TESLA 1

    Abstract: 104Gauss
    Text: Differential Magneto Resistor FP 412 D 250 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction


    Original     		PDF Q65412-D R01-3, R04-6 R01-2 R02-3 TESLA 1 104Gauss

    J-STD-002 test A

    Abstract: LCD inverter 94v 0 capacitor 106 20K lcd backlight inverter luggage security system tesla coil X7R 1KV RS-198 106 10K KEMET
    Text: High Temperature, High Voltage Performance Characteristics GENERAL SPECIFICATIONS ENVIRONMENTAL Working Voltage: C0G 50, 100, 200, 500, 1k, 2k, 3k, 4k, 5k, 7.5k, 10k, 15k, 20k X7R 50, 100, 200, 500, 1k, 2k, 3k, 4k, 5k, 7.5k, 10k, 15k, 20k, 30k, 40k, 50k X5U


    Original     		PDF RS-198, J-STD-002 test A LCD inverter 94v 0 capacitor 106 20K lcd backlight inverter luggage security system tesla coil X7R 1KV RS-198 106 10K KEMET

    Q65420-L90

    Abstract: Q65420-L0090E001 r046 q65420l90 magneto R023
    Text: Double Differential Magneto Resistor FP 420 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage


    Original     		PDF Q65420-L90 Q65420-L0090E001 R01-2 R02-3 R04-5 R05-6 R01-3, Q65420-L90 Q65420-L0090E001 r046 q65420l90 magneto R023

    magneto resistor

    Abstract: Q65425-L90 R01-3 Q65425-L0090E001 magneto
    Text: Differential Magneto Resistor FP 425 L 90 Dimensions in mm Features Typical applications • • • • • • • • • • • Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage


    Original     		PDF Q65425-L90 Q65425-L0090E001 R01-2 R02-3 R04-5 R05-6 R01-3, magneto resistor Q65425-L90 R01-3 Q65425-L0090E001 magneto

    Q65110-L80F

    Abstract: Q65410-L80E TESLA 1
    Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Version 2.0 Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage


    Original     		PDF Q65410-L80E Q65110-L80F R01-2 R02-3 R04-5 R05-6 R01-3, Q65110-L80F Q65410-L80E TESLA 1

    Q65110-L80F

    Abstract: Q65410-L80E
    Text: Double Differential Magneto Resistor FP 410 L 4 x 80 FM Dimensions in mm Features Typical applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage


    Original     		PDF Q65410-L80E Q65110-L80F R01-2 R02-3 R04-5 R05-6 R01-3, Q65110-L80F Q65410-L80E

    Tesla

    Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
    Text: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure­ ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.


    OCR Scan     		PDF RHY19, SBV525 RHY19 Q61708-Y19 Q64099-V Tesla SBV525 tesla semiconductor asco Q61708 tesla b 100

    tangential

    Abstract: Tesla Q64003-T21
    Text: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.


    OCR Scan     		PDF Q64003-T21 tangential Tesla Q64003-T21

    Tesla

    Abstract: SBV595 Hall 300 Q64099
    Text: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system


    OCR Scan     		PDF SBV595 SBV595 Q64099-V595 Tesla Hall 300 Q64099

    Q64001

    Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
    Text: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)


    OCR Scan     		PDF EA218, FA22e EA218 FA22e Q64001-E218 Q64001-F22E Q64001 f22e Hall 22e Q64001-F22E Tesla

    Untitled

    Abstract: No abstract text available
    Text: Halbleiter-Sensoren Semiconductor Sensors Symbole Begriffe Symbols Terms s M agnetische Induktion B M agnetic induction Fl Linearitätsfehler 'o u t Linearity error Output current O perating current A usgangsstrom Arbeitsstrom , Betriebsgleichstrom A juI !


    OCR Scan     		PDF 65210-L101 65210-D 65210-L100-W 65212-D 65212-L1004

    Hall Siemens sbv 525

    Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
    Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25


    OCR Scan     		PDF 023SbOS Q01b3 4099-V TCV20 Hall Siemens sbv 525 K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv

    RHY17

    Abstract: RHY18 Q61708 tesla semiconductor Hall 300
    Text: R H Y17, RHY18 Low-temperature Hall probes RH Y 17 and R H Y 18 are Hall generators for measuring magnetic fields down to —2 6 9 °C. The flat and cylindrical respectively forms are suitable for universal and axial measurements (respectively). They find application in cryology, i.e. super­


    OCR Scan     		PDF RHY17, RHY18 RHY17 RHY18 Q61708-Y17 Q61708-Y18 OHY18 Q61708 tesla semiconductor Hall 300

    magnetoresistor

    Abstract: No abstract text available
    Text: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m


    OCR Scan     		PDF fl235b05 magnetoresistor

    FC33

    Abstract: S290 Q64003-F FC34 Fc-34 FC32
    Text: FC 32, FC 33, FC34 Field probes FC 32, FC 33, and FC 34 are designed for high-precision measurements of magnetic fields. Temperature coefficients j8 are minimized semiconductor material InAsP . Type Order number FC 32 FC 33 FC 34 Q 640 03 -F 32 Q 640 03 -F 33


    OCR Scan     		PDF Q64003-F Q64003-F34 FC33 S290 FC34 Fc-34 FC32

    we381

    Abstract: magneto resistor
    Text: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage


    OCR Scan     		PDF Q65410-L80E Q65110-L80F flE35b05 013437b we381 magneto resistor

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    SBV579

    Abstract: tesla semiconductor
    Text: SBV579 Hall field probe The field probe SBV 579 is only suited to measure DC magnetic fields. The Hall chip of cross-shaped design ensures a particularly small linearization error semi­ conductor material InAs . The electrical system is protected by a coat of varnish.


    OCR Scan     		PDF SBV579 Q64099-V579 1iO05 SBV579 tesla semiconductor

    SBV566

    Abstract: hall generator sbv 566 SBV570
    Text: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there


    OCR Scan     		PDF SBV570 Q64099-V570 SBV566 hall generator sbv 566 SBV570

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Double Differential Magneto Resistor FP 420 L 90 1.6 pin connection 2 6 fingers on both sides free of lacquer 3) Center-distance between the Diff.-Systems. Approx, weight 0.2 g GPX06896 Dimensions in mm Features Typical applications • • •


    OCR Scan     		PDF GPX06896

    Hall sensors Siemens

    Abstract: hall sensor siemens Siemens Hall K/tesla semiconductor Hall Hall Siemens
    Text: SIEMENS 3.1 Hall-Effect Sensors Fundamentals The Hall effect, so named after its discoverer Edwin Hall in 1879, is the result of the Lorentz force on moving electrons subjected to a magnetic field. Fig. 1a is a representation of the current flow in a material when no magnetic field is present. As


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FP 412 L 100 Differential Magneto Resistor ’ ^Punching—points 00.8 ;=[o.o4ic W o j s ia ; 1) If delivery os tape,separate at punching—poinls 2) Connections on both sides free of lacquer 3) Mechanical connections 4) Center-distance between the Diff,-Systems


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FP 410 L 4x80 FM Double Differential Magneto Resistor •//[(Hie! .6 pin connection {-1 0 .2 5 ] B': 0.25] A] i-[0 '.0 4 [C ] c o ld ii [ B i 1) 2) 3) 4) If delivery as lape, separate a l p u n ch in g -p o in ts Connections on both sides free of lacquer


    OCR Scan     		PDF pxo6776