JS8856 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8856-AS TECHNICAL DATA FEATURES: • > SUITABLE FOR Ku-BAND AM PLIFIER H IG H POW ER P-jdB = 3 3 .5 dBm at f = 14.5 GHz H IG H GAIN G id B = 6 .5 d B a t f = 14.5 GHz ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

JS8856-AS

Abstract: JS8856
Contextual Info: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8856-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 33 5 dBm at f = 14.5 GHz HIGH GAIN GidB = 6.5 dB at f = 14.5 GHz RF P E R F O R M A N C E SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

JS8834-AS

Contextual Info: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs Chip Form Features • High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z • High gain - G idB = 6 .5 dB at f = 14.5 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)