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    JOHANSON PISTON TRIMMER Datasheets Context Search

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    100MIL

    Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor
    Text: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450


    Original     		PDF UDR-500 UDR-500 100MIL) 180pf, 470pf, 100MIL FERRITE TOROID Johanson Piston Trimmer indiana general udr 70 F624-19 l44 transistor

    MRF327

    Abstract: No abstract text available
    Text: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the


    Original     		PDF MRF327 VK200-19/4B 10i22 80-mil-Thick MRF327

    FERRITE TOROID

    Abstract: F624-19 100MIL ferrite L8 FERRITE TOROID Indiana General F684-1 Johanson Dielectrics UDR-450 C144* transistor Johanson Piston Trimmer c16pc
    Text: UDR-450 450 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-450 is an internally matched, COMMON EMITTER transistor capable of providing 450 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450


    Original     		PDF UDR-450 UDR-450 100MIL) FG27-8 180pf, 470pf, FERRITE TOROID F624-19 100MIL ferrite L8 FERRITE TOROID Indiana General F684-1 Johanson Dielectrics C144* transistor Johanson Piston Trimmer c16pc

    MRF327

    Abstract: 80WF
    Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base


    Original     		PDF MRF327 AR120NA MRF327 80WF

    Johanson Piston Trimmer

    Abstract: G200
    Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200

    Johanson Piston Trimmer

    Abstract: G200 RF TRANSISTOR 2GHZ
    Text: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 RF TRANSISTOR 2GHZ

    Johanson Piston Trimmer

    Abstract: G200 3 w RF POWER TRANSISTOR NPN 5.8 ghz
    Text: e PTB 20202 125 Watts, 1465–1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minimum output power, it is specifically intended for cellular


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 3 w RF POWER TRANSISTOR NPN 5.8 ghz

    Johanson Piston Trimmer

    Abstract: Transistor 025l
    Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer Transistor 025l

    Johanson Piston Trimmer

    Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
    Text: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc


    Original     		PDF MRF327/D MRF327 Johanson Piston Trimmer J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc


    Original     		PDF MRF327/D MRF327 MRF327/D*

    Johanson Piston Trimmer

    Abstract: MRF327 erie redcap capacitors VK200
    Text: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc


    Original     		PDF MRF327/D MRF327 MRF327/D* Johanson Piston Trimmer MRF327 erie redcap capacitors VK200

    Untitled

    Abstract: No abstract text available
    Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.


    Original     		PDF

    MRF327

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band


    OCR Scan     		PDF 80-mil-Thick MRF327

    c38 transistor

    Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
    Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band


    OCR Scan     		PDF MRF327 MRF327 Li3b7555

    c38 transistor

    Abstract: 2160 transistor Johanson Piston Trimmer
    Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF BATC100) c38 transistor 2160 transistor Johanson Piston Trimmer

    R2C TRANSISTOR

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF

    815 transistor

    Abstract: SMt Transistor g16 Johanson Piston Trimmer
    Text: ERICSSON í E 20235* 70 Watts, 2 . 1 - 2 . 2 GHz Cellular Radio Po we r Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF

    Granberg

    Abstract: No abstract text available
    Text: Ericsson Components 20125,100 Watts at 2 Ghz! Prepared by Cynthia Blair, Ericsson Components With the advent of PCS, demands for high power amplifiers working at 2 GHz have increased. Devices with larger peak power handling capability, along with a high degree of linearity, are needed for any


    OCR Scan     		PDF 500mA Granberg

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . d e s ig n e d p rim a rily fo r w id e b a n d la rg e -s ig n a l o u tp u t a m p lifie r sta g e s in the 100 to 500 M H z fre q u e n c y range. • G u a ra n te e d P e rfo rm a n c e @ 4 0 0 M H z, 2 8 Vdc


    OCR Scan     		PDF MRF327

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


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    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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