IXTQ76N25T Search Results

IXTQ76N25T Price and Stock

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IXYS Corporation IXTQ76N25T MOSFETs 76 Amps 250V 39 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTQ76N25T		287			1 $6.35 10 $5.43 100 $3.99 1000 $3.14 10000 $3.14	Buy Now
Verical	IXTQ76N25T		224		12	1 - 10 - 100 $5.32 1000 $5.32 10000 $5.32	Buy Now
Future Electronics	IXTQ76N25T	Tube			30	1 - 10 - 100 $3.69 1000 $3.69 10000 $3.69	Buy Now
TTI	IXTQ76N25T	Tube			300	1 - 10 - 100 - 1000 $3.11 10000 $3.11	Buy Now
TME	IXTQ76N25T		233		1	1 $5.73 10 $4.56 100 $4.09 1000 $4.09 10000 $4.09	Buy Now

New Advantage Corporation	IXTQ76N25T		180		1	1 - 10 - 100 $8.02 1000 $7.49 10000 $7.49	Buy Now
Littelfuse Inc IXTQ76N25T Discmsft Nchtrenchgate-Gen1 To-3P (3)/ Tube \|Littelfuse IXTQ76N25T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTQ76N25T	Bulk			300	1 - 10 - 100 $4.48 1000 $3.6 10000 $3.35	Buy Now

IXTQ76N25T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTQ76N25T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 76A TO-3P		Original	PDF

IXTQ76N25T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTI76N25T Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244 Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T O-247 O-262 O-263 O-220 76N25T IXTP76N25T IXTQ76N25T 2ZAO0732373 DIODE 76A t244	PDF
76N2 Abstract: to-247 to-220 to-3p 76N25T IXTP76N25T IXTQ76N25T Text: TrenchTM Power MOSFET N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	O-263 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-220AB O-247 76N25T 9-10-A 76N2 to-247 to-220 to-3p IXTP76N25T IXTQ76N25T	PDF
Untitled Abstract: No abstract text available Text: TrenchTM Power MOSFET IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-263 O-220AB IXTA76N25T IXTP76N25T	PDF
76N25T Abstract: IXTQ76N25T IXTP76N25T 76N25 IXTA76n25t IXTQ76N25 IXTH76N25T IXTQ T76n ixtq76 Text: TrenchTM Power MOSFET N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	O-263 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-220AB O-247 IXTA76N25T IXTP76N25T 76N25T IXTQ76N25T 76N25 IXTQ76N25 IXTH76N25T IXTQ T76n ixtq76	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF