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    IXTP 02N50D Search Results

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    IXTP 02N50D Price and Stock

    IXYS Corporation IXTP02N50D

    MOSFET N-CH 500V 200MA TO220AB
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    DigiKey IXTP02N50D Tube 32 50
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    • 100 $3.655
    • 1000 $3.655
    • 10000 $3.655
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    Mouser Electronics IXTP02N50D 122
    • 1 $6.38
    • 10 $5.07
    • 100 $3.95
    • 1000 $3.54
    • 10000 $3.54
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    TME IXTP02N50D 1
    • 1 $4.98
    • 10 $3.96
    • 100 $3.56
    • 1000 $3.56
    • 10000 $3.56
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    Littelfuse Inc IXTP02N50D

    Discmosfetn-Ch Depl Mode-Std To-220Ab/Fp/Tube |Littelfuse IXTP02N50D
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    Newark IXTP02N50D Bulk 300
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    IXYS Integrated Circuits Division IXTP02N50D

    MOSFET DIS.200mA 500V N-CH TO220AB DEPLETION MODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTP02N50D 98
    • 1 $1.63746
    • 10 $1.63746
    • 100 $1.4886
    • 1000 $1.4886
    • 10000 $1.4886
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    IXTP 02N50D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP02N50D IXYS 500V high voltage MOSFET Original PDF

    IXTP 02N50D Datasheets Context Search

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    02N5

    Abstract: IXTP 02N50D
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS on = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous


    Original
    PDF 02N50D O-220 405B2 02N5 IXTP 02N50D

    TO-220AD

    Abstract: 02N5 IXTP 02N50D depletion MOSFET
    Text: Advance Technical Information High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25


    Original
    PDF 02N50D O-220AD TO-220AD 02N5 IXTP 02N50D depletion MOSFET

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original
    PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    TO-220AD

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on = 500 V = 200 mA = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20


    Original
    PDF 02N50D O-220AD 405B2 TO-220AD

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


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    PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D