ixys ixtn 79n20
Abstract: 79N20 IXTN79N20 ixtn 79n20
Text: MegaMOSTMFET IXTN 79N20 VDSS = 200 V = 85 A Ω = 25 mΩ ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient
|
Original
|
79N20
OT-227
79N20
ixys ixtn 79n20
IXTN79N20
ixtn 79n20
|
PDF
|
46N50L
Abstract: IXTN
Text: Power MOSFETs with Extended FBSOA IXTN 46N50L N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25oC to 150oC 500 V VDGR TJ = 25oC to 150oC; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
46N50L
150oC
150oC;
OT-227
E153432
Sourc40
46N50L
IXTN
|
PDF
|
62N50L
Abstract: IXTN62N50L
Text: Power MOSFETs with Extended FBSOA IXTB 62N50L IXTN 62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 500 = 62 ≤ 0.1 V A Ω Preliminary Data Sheet PLUS 264TM (IXTB) Symbol Test Conditions Maximum Ratings IXTB IXTN VDSS TJ = 25oC to 150oC
|
Original
|
62N50L
62N50L
264TM
150oC
IXTN62N50L
|
PDF
|
CF5076
Abstract: WF5076
Text: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any
|
Original
|
NC0811AE
CF5076
WF5076
|
PDF
|
CF5076
Abstract: WF5076
Text: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any
|
Original
|
NC0811BE
CF5076
WF5076
|
PDF
|
WF5075
Abstract: 27mhz rf amplifier
Text: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any
|
Original
|
NC0810BE
WF5075
27mhz rf amplifier
|
PDF
|
CF5075
Abstract: 5075BM 8901B WF5075 12mhz crystal C1 C0 5075A 5075B5 23/N-50-7-5
Text: 5075 series バリキャップ内蔵 VCXO 用 IC •概要 5075 series は幅広い周波数可変範囲の確保が困難な小型の水晶振動子でも広可変を可能にし、これを小さ なチップサイズに集積した小型 VCXO 用 IC です。新開発のバリキャップダイオード搭載プロセスを採用した
|
Original
|
27MHz,
fo/16
190ppm
27MHz)
20MHz
55MHz
WF5075×
CF5075×
WF5075
CF5075
5075BM
8901B
WF5075
12mhz crystal C1 C0
5075A
5075B5
23/N-50-7-5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5077 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5077 series are LV-PECL output VCXO ICs that provide a wide frequency pulling range. They employ bipolar oscillator circuit and recently developed varicap diode fabrication process that provides a low phase noise characteristic and a wide frequency pulling range
|
Original
|
170MHz
ND12024-E-02
|
PDF
|
5076b
Abstract: WF5076 CF5076 27mhz rf ic max5076
Text: 5076 series バリキャップ内蔵 VCXO 用 IC •概要 5076 series は幅広い周波数可変範囲の確保が困難な小型の水晶振動子でも広可変を可能にし、これを小さ なチップサイズに集積した小型 VCXO 用 IC です。新開発のバリキャップダイオード搭載プロセスを採用した
|
Original
|
27MHz,
fo/16
160ppm
27MHz)
20MHz
55MHz
WF5076×
CF5076×
WF5076
5076b
WF5076
CF5076
27mhz rf ic
max5076
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5077 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5077 series are LV-PECL output VCXO ICs that provide a wide frequency pulling range. They employ bipolar oscillator circuit and recently developed varicap diode fabrication process that provides a low phase noise characteristic and a wide frequency pulling range
|
Original
|
170MHz
ND12024-E-03
|
PDF
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
|
PDF
|
TEST20
Abstract: No abstract text available
Text: □ IXYS vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V p ^D25 DS on 58 A 85 m fì 61 A 75 m fì N-Channel Enhancement Mode Preliminary Data os Symbol TestC onditions v DSS Tj = 2 5 °C to 150°C vDGR T, = 25°C to 150°C; £ s= 1.0 M il
|
OCR Scan
|
58N50
61N50
OT-227
E153432
61N50
TEST20
|
PDF
|
pixy
Abstract: No abstract text available
Text: PiXYS a«i»«iawawiWBt»i High Current Power MOSFET . - V DSS IXTN 58N50 IXTN 61N50 500 V 500 V lg! F js n g g ìg R ^D25 DS on 58 A 85 mQ 61 A 75 m il N-Channel Enhancement Mode Symbol Test Conditions Voss v D0B Tj = 25°C to 150°C 500 V Tj = 25°C to 150°C; Rss= 1.0 M£2
|
OCR Scan
|
58N50
61N50
61N50
OT-227
E153432
C2-53
pixy
|
PDF
|
ixys ixtn 79n20
Abstract: IXTN max4458 IXTN79N20
Text: nixYS MegaMOS FET IXTN 79N20 VDSS = 200 V U = 85 A ^D S on = ^ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =25°C to150°C 200 V v ™ ^ 200 V = 25° C to 150° C i R ^ I O k i l miniBLOC, SOT-227 B 53432 Vos vGSM Continuous
|
OCR Scan
|
79N20
to150
OT-227
C2-16
79N20
C2-17
ixys ixtn 79n20
IXTN
max4458
IXTN79N20
|
PDF
|
|
|