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IXYS Corporation IXTF200N10T MOSFET N-CH 100V 90A I4PAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTF200N10T	Tube			300	1 - 10 - 100 - 1000 $6.29063 10000 $6.29063	Buy Now
Mouser Electronics	IXTF200N10T					1 - 10 - 100 - 1000 $6.58 10000 $6.58	Get Quote
Bristol Electronics	IXTF200N10T		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXTF200N10T		20			1 $11.61 10 $10.32 100 $10.32 1000 $10.32 10000 $10.32	Buy Now
TTI	IXTF200N10T	Tube			300	1 - 10 - 100 - 1000 $8.39 10000 $8.39	Buy Now

TME	IXTF200N10T				1	1 $10.46 10 $8.33 100 $7.48 1000 $7.48 10000 $7.48	Get Quote
Littelfuse Inc IXTF200N10T Discmsft Nchtrenchgate-Gen1 I4-Pak Iso+/ Tube \|Littelfuse IXTF200N10T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTF200N10T	Bulk			300	1 - 10 - 100 - 1000 $6.6 10000 $6.6	Buy Now

IXTF200N10T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTF200N10T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 90A I4-PAC-5		Original	PDF

IXTF200N10T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A Ω ≤ 6.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	IXTF200N10T 200N10T	PDF
IXTF200N10T Abstract: 200N1 Contextual Info: Preliminary Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings	Original	IXTF200N10T 200N10T 9-30-08-D IXTF200N10T 200N1	PDF
Contextual Info: Advance Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated ISOPLUS i4-PakTM (5-lead) (IXTF) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M	Original	IXTF200N10T 405B2	PDF
Contextual Info: Advance Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 120A Ω ≤ 6.3mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings	Original	IXTF200N10T 338B2	PDF
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTF200N10T RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings	Original	IXTF200N10T 200N10T 9-30-08-D	PDF
Contextual Info: Preliminary Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A ≤ 6.0 m Ω RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTF200N10T 200N10T_	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
isoplus ixys mounting Abstract: isoplus IXTF230N085T SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTF200N10T IXTF250N075T IXTF280N055T Contextual Info: H I G H C U R R E N T T R E N C H M V P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 4 - PA K S ™ N E W P R O D U C T B R I E F SUMMARY TABLE Part Number High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i4-PaksTM NEXT GENERATION 55V TO 100V TRENCH POWER MOSFETS	Original	IXTF280N055T IXTF250N075T IXTF230N085T IXTF200N10T E153432) IXFP14N60P 2000TM IXFC14N60P ISOPLUS247TM com/AN505 isoplus ixys mounting isoplus IXTF230N085T SIL-PAD ISOPLUS247 IXFC14N60P IXTF200N10T IXTF250N075T IXTF280N055T	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T	PDF