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    IXTA08N100P Search Results

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    IXTA08N100P Price and Stock

    Littelfuse Inc IXTA08N100P

    MOSFET N-CH 1000V 800MA TO263
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    DigiKey IXTA08N100P Tube 300
    • 1 -
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    • 1000 $1.39343
    • 10000 $1.39343
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    Newark IXTA08N100P Bulk 300
    • 1 -
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    • 100 $1.98
    • 1000 $1.55
    • 10000 $1.39
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    IXYS Corporation IXTA08N100P

    MOSFETs 0.8 Amps 1000V 20 Rds
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    Mouser Electronics IXTA08N100P
    • 1 $2.71
    • 10 $2.28
    • 100 $1.89
    • 1000 $1.74
    • 10000 $1.74
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    Future Electronics IXTA08N100P Tube 24 Weeks 50
    • 1 -
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    • 100 $1.48
    • 1000 $1.48
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    TTI IXTA08N100P Tube 300
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    • 1000 $1.55
    • 10000 $1.39
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    TME IXTA08N100P 1
    • 1 $2.14
    • 10 $1.71
    • 100 $1.54
    • 1000 $1.54
    • 10000 $1.54
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    IXTA08N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA08N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 0.8A TO-263 Original PDF

    IXTA08N100P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A

    08N10

    Abstract: IXTY08N100P ixtp08n100p
    Text: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A 08N10 IXTY08N100P ixtp08n100p

    IXTP08N100P

    Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N
    Text: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A IXTP08N100P 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N