IXTP08N100P Search Results

IXTP08N100P Price and Stock

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Littelfuse Inc IXTP08N100P MOSFET N-CH 1000V 800MA TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP08N100P	Tube	248		1	1 $2.63 10 $2.63 100 $2.63 1000 $1.00239 10000 $0.99625	Buy Now
Newark	IXTP08N100P	Bulk			300	1 - 10 - 100 $1.83 1000 $1.44 10000 $1.29	Buy Now
IXYS Corporation IXTP08N100P MOSFETs 0.8 Amps 1000V 20 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP08N100P		300			1 $2.41 10 $1.43 100 $1.29 1000 $1.17 10000 $1.14	Buy Now
Future Electronics	IXTP08N100P	Tube		24 Weeks	300	1 - 10 - 100 $1.37 1000 $1.37 10000 $1.37	Buy Now
TTI	IXTP08N100P	Tube			300	1 - 10 - 100 - 1000 $1.22 10000 $1.17	Buy Now
TME	IXTP08N100P		300		1	1 $2 10 $1.59 100 $1.43 1000 $1.32 10000 $1.32	Buy Now

IXTP08N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP08N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-220		Original	PDF

IXTP08N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	PDF	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A
08N10 Abstract: IXTY08N100P ixtp08n100p Text: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A 08N10 IXTY08N100P ixtp08n100p
IXTP08N100P Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N Text: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	PDF	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A IXTP08N100P 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250