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    IXTP08N100P Search Results

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    IXTP08N100P Price and Stock

    IXYS Corporation IXTP08N100P

    MOSFETs 0.8 Amps 1000V 20 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP08N100P 300
    • 1 $2.41
    • 10 $1.43
    • 100 $1.29
    • 1000 $1.17
    • 10000 $1.14
    		Buy Now
    Future Electronics IXTP08N100P Tube 24 Weeks 300
    • 1 -
    • 10 -
    • 100 $1.37
    • 1000 $1.37
    • 10000 $1.37
    		Buy Now
    TTI IXTP08N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.22
    • 10000 $1.17
    		Buy Now

    IXYS Integrated Circuits Division IXTP08N100P

    MOSFET DIS.800mA 1000V N-CH TO220 POLAR THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTP08N100P 99
    • 1 $2.03214
    • 10 $2.03214
    • 100 $1.8474
    • 1000 $1.8474
    • 10000 $1.8474
    		Buy Now

    IXTP08N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP08N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-220 Original PDF

    IXTP08N100P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A

    08N10

    Abstract: IXTY08N100P ixtp08n100p
    Text: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A 08N10 IXTY08N100P ixtp08n100p

    IXTP08N100P

    Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N
    Text: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A IXTP08N100P 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250