IXSH50N60B Search Results

Contextual Info: □ IXYS Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS V CES ^C25 V CE sat Short Circuit SOA Capability = 600 V = 75 A = 2.5 V ?c G TO-247 SMD (\Y m A Maximum Ratings Sym bol Test C onditions VCES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 M£i

Contextual Info: O IX Y S Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS VCES = 600 V C = Collector, TAB = Collector Short Circuit SOA Capability Symbol Test Conditions VCES ^ v CGR Maximum Ratings = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MO 600 V v GES

3850 mos

Abstract: GK 087 GEM X 365
Contextual Info: IGBT High Speed IXSH50N60B IXSH 50N60BS Short Circuit SOA Capability Test Conditions v CES T j = 25“C to 150°C 600 V v CGR ^ = 25°C to 150°C; R0E = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient ±30 V Maximum Ratings A ^C25 T c = 25°C, limited by leads

T0263

Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
Contextual Info: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES

case style

Abstract: IXSH35N100A
Contextual Info: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES