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IXYS Corporation IXGH30N60C3D1 IGBT 600V 60A 220W TO247
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DigiKey	IXGH30N60C3D1	Tube	1,381		1	1 $6.96 10 $6.96 100 $4.278 1000 $3.48663 10000 $3.48663	Buy Now
Mouser Electronics	IXGH30N60C3D1		337			1 $6.07 10 $5.88 100 $4.28 1000 $3.49 10000 $3.49	Buy Now
TTI	IXGH30N60C3D1	Tube	150		30	1 - 10 - 100 $4.24 1000 $4.24 10000 $4.24	Buy Now
IXYS Corporation IXGH30N60B IGBT 600V 60A 200W TO247AD
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DigiKey	IXGH30N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH30N60A IGBT 600V 50A 200W TO247AD
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DigiKey	IXGH30N60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGH30N60A		29			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH30N60C3 IGBT 600V 60A 220W TO247AD
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DigiKey	IXGH30N60C3	Tube			30	1 - 10 - 100 $2.66267 1000 $2.66267 10000 $2.66267	Buy Now
Bristol Electronics	IXGH30N60C3		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH30N60C2 IGBT 600V 70A 190W TO247
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DigiKey	IXGH30N60C2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip 1 Exchange	IXGH30N60C2		21,395			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXGH30N60C2		13,081		1	1 - 10 - 100 $10.85 1000 $10.85 10000 $10.85	Buy Now

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IXGH30N60 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGH30N60	IXYS	Low Vce(sat) IGBT High Speed IGBT	Original	PDF
IXGH30N60	IXYS	IGBT 30 Amps, 500-600 Volts	Scan	PDF
IXGH30N60	IXYS	Power MOSIGBTs	Scan	PDF
IXGH30N60A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF
IXGH30N60A	IXYS	Power MOSIGBTs	Scan	PDF
IXGH30N60AU1	IXYS	High Speed IGBT with Diode	Scan	PDF
IXGH30N60B	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH 30N60B2	IXYS	HiPerFAST IGBT	Original	PDF
IXGH30N60B2	IXYS	IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT	Original	PDF
IXGH30N60B2D1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 190W TO247AD	Original	PDF
IXGH30N60B4	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 66A 190W TO247	Original	PDF
IXGH30N60BD1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF
IXGH30N60BU1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF
IXGH-30N60BU1	IXYS	HiPerFAST IGBT with Diode	Original	PDF

IXGH30N60C2	IXYS	HiPerFAST IGBT - C2-Class High Speed IGBTs	Original	PDF
IXGH30N60C2D1	IXYS	HiPerFAST IGBT with Diode C2-Class High Speed IGBTs	Original	PDF
IXGH30N60C3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO247AD	Original	PDF
IXGH30N60C3C1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO247	Original	PDF
IXGH30N60C3D1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO247	Original	PDF
IXGH30N60U1	IXYS	High Speed IGBT with Diode	Scan	PDF

IXGH30N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGH30N60B Abstract: IXGT30N60B Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms	Original	PDF	IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXGH30N60B IXGT30N60B
8-8NS Abstract: No abstract text available Text: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings	Original	PDF	IXGH30N60B4 IC110 O-247 338B2 8-8NS
IXGH30N60B4 Abstract: No abstract text available Text: Preliminary Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings	Original	PDF	IXGH30N60B4 IC110 O-247 062in. 338B2 IXGH30N60B4
G30N60 Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710 Text: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz IC110 O-263 O-220 G30N60 IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710
Untitled Abstract: No abstract text available Text: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8	Original	PDF	IXGH30N60U1 Junc-Case620m delay100nÃ time200nÃ time500nÃ
Untitled Abstract: No abstract text available Text: Preliminary Technical Information High-Gain IGBT VCES IC110 VCE sat tfi(typ) IXGH30N60B4 Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings	Original	PDF	IC110 IXGH30N60B4 O-247 338B2
IXGA30N60C3 Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3 Text: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	40-100kHz IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 IC110 O-263 IC110 O-220AB O-247 30N60C3 IXGH30N60C3 G30N60C3
ixgh30n60c3d1 Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3 Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110 O-247) O-268 O-247 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Untitled Abstract: No abstract text available Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8	Original	PDF	IXGH30N60AU1 Junc-Case620m delay100nÃ time200nÃ time500nÃ
IXGA30N60C3C1 Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3 Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings	Original	PDF	IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 IF110 O-220AB O-247 IXGH30N60C3C1 30N60C3
IXGH30N60C3D1 Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1 Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ	Original	PDF	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 ID110 IXGH30N60C3D1 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings	Original	PDF	IC110 IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 O-263 100kHz O-220AB IF110
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz O-263 O-220AB 30N60C3 5-02-11-A
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110

G30N60 Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3 Text: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions	Original	PDF	IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 O-220 IF110 G30N60 IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
14055B Abstract: No abstract text available Text: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous	OCR Scan	PDF	IXGH30N60B IXGT30N60B O-268 -247A 14055B
Untitled Abstract: No abstract text available Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C	OCR Scan	PDF	IXGH30N60BD1 150PC 15CFC; O-247
30N60 Abstract: No abstract text available Text: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO	OCR Scan	PDF	IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60
L-1047 Abstract: No abstract text available Text: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous	OCR Scan	PDF	IXGH30N60B IXGT30N60B 13/10Nm/lb O-247 O-268 L-1047
Untitled Abstract: No abstract text available Text: HiPerFAST IGBT IXGH30N60B IXGT30N60B vCES ^C25 vCE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data ÒB Symbol Test Conditions VCES Tj =25°Cto150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 Mft 600 V vGES vGEM Continuous ±20 V Transient ±30	OCR Scan	PDF	IXGH30N60B IXGT30N60B Cto150 O-247 O-268
30N50A Abstract: 30n60 to-220 30N50 30N60 IXGM30N60 IXGH30N50 IXGH30N60 IXGM30N50 wabash 30n5 Text: T T T X X W 4686226 1 I “ 01 X Y S CO RP ÏÏFj4bübridb 03E 00223 UUUUddd Y D IXGH30N50, 60 IXGM30N50, 60 t 30 AM PS, 500-600 VO LTS IXGH30N50 IXGM30N50 IXGH30N60 IXGM30N60 Unit Drain-Source Voltage 1 Vdss 500 600 Vdc Drain-Gate Voltage (Rq s = 1-OMft) (1)	OCR Scan	PDF	IXGH30N50, IXGM30N50, IXGH30NS0 IXGM30N50 IXGH30N60 IXGM30N60 30N50A 30n60 to-220 30N50 30N60 IXGH30N50 IXGM30N50 wabash 30n5
smd diode 819 Abstract: 30n60 Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO	OCR Scan	PDF	IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) typ200 B2-58 smd diode 819 30n60
TO-247 Package y Abstract: No abstract text available Text: □ IXYS Preliminary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S V CES 600 V 60 A 1.8 V 130 ns ^C25 V CE sat Combi Pack TO-247 SMD (30N60BU1S) m Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	IXGH30N60BU1 IXGH30N60BU1S O-247 TO-247 Package y

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IXYS Corporation IXGH30N60C3D1

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IXGH30N60 Datasheets (20)

IXGH30N60 Datasheets Context Search

IXGH30N60B

8-8NS

IXGH30N60B4

G30N60

Untitled

Untitled

IXGA30N60C3

ixgh30n60c3d1

Untitled

IXGA30N60C3C1

IXGH30N60C3D1

Untitled

Untitled

Untitled

G30N60

STR-G6551

14055B

Untitled

30N60

L-1047

Untitled

30N50A

smd diode 819

TO-247 Package y