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IXYS Corporation IXGH30N60C3D1 IGBT 600V 60A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60C3D1	Tube	1,253		1	1 $8.1 10 $8.1 100 $4.70967 1000 $3.48663 10000 $3.48663	Buy Now
Mouser Electronics	IXGH30N60C3D1		272			1 $6.32 10 $6.29 100 $4.28 1000 $3.49 10000 $3.49	Buy Now
TTI	IXGH30N60C3D1	Tube	60		30	1 - 10 - 100 $4.24 1000 $3.47 10000 $3.4	Buy Now
Infineon Technologies AG AIKW30N60CTXKSA1 IGBT TRENCH FS 600V 60A TO-247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AIKW30N60CTXKSA1	Tube	209		1	1 $5.9 10 $4.522 100 $4.11833 1000 $3.50551 10000 $3.32336	Buy Now
Avnet Americas	AIKW30N60CTXKSA1	Tube		13 Weeks	240	1 - 10 - 100 - 1000 $3.42051 10000 $3.42051	Buy Now
Mouser Electronics	AIKW30N60CTXKSA1		286			1 $5.9 10 $4.52 100 $3.76 1000 $3.41 10000 $3.32	Buy Now
Newark	AIKW30N60CTXKSA1	Bulk	333		1	1 $7.73 10 $6.3 100 $5.5 1000 $5.14 10000 $5.14	Buy Now
TME	AIKW30N60CTXKSA1				1	1 $5.85 10 $5.19 100 $4.47 1000 $4.33 10000 $4.33	Get Quote

EBV Elektronik	AIKW30N60CTXKSA1			14 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	AIKW30N60CTXKSA1		120			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXSH30N60C IGBT PT 600V 55A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSH30N60C	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGP30N60C3 IGBT PT 600V 60A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGP30N60C3	Tube			50	1 - 10 - 100 $1.7832 1000 $1.7832 10000 $1.7832	Buy Now
Bristol Electronics	IXGP30N60C3		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXKH30N60C5 MOSFET N-CH 600V 30A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKH30N60C5	Tube			30	1 - 10 - 100 $4.50867 1000 $4.50867 10000 $4.50867	Buy Now
TME	IXKH30N60C5				1	1 $5.07 10 $4.02 100 $3.62 1000 $3.62 10000 $3.62	Get Quote

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30N60C Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
30N60C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
30N60C3D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

30N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30n60b Abstract: 30N60 30N60C ic 931 Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931	PDF
Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20090209d	PDF
30n60c Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	30N60B 30N60C O-247 O-268	PDF
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268	PDF
30N60B Abstract: 30N60C Contextual Info: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B 30N60C O-247 O-268 30N60C	PDF
DSA003710 Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	30N60C5 O-247 20070625a DSA003710	PDF
MOSFET IXYS TO-220 Contextual Info: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)	Original	30N60C5 O-247 O-220 MOSFET IXYS TO-220	PDF
Contextual Info: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20080310b	PDF
UPS SIEMENS Abstract: 30N60C siemens servo motor siemens igbt Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)	Original	30N60C2 IC110 O-220 UPS SIEMENS 30N60C siemens servo motor siemens igbt	PDF
Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	30N60C2D1 IC110 O-247 O-268	PDF
Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20080523c	PDF
30n60b Abstract: B2045 Contextual Info: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	30N60B 30N60C 30n60b B2045	PDF
30N60C2 Abstract: 728B1 123B1 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	30N60C2 30N60C2 IC110 O-268 O-247 065B1 728B1 123B1	PDF
30N60C2D1 Abstract: v922 Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	30N60C2D1 IC110 O-247 O-268 065B1 728B1 123B1 v922	PDF

IGBT GS Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20090209d IGBT GS	PDF
Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S D(TAB) Features MOSFET Conditions VDSS	Original	30N60C5 O-247	PDF
Contextual Info: HiPerFASTTM IGBT IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C limited by leads 70	Original	30N60C2 IC110 O-220	PDF
Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	30N60C5 O-247 20070625a	PDF
30N60C Contextual Info: n ix Y S ADVANCED TECHNICAL INFORMATION VCES High Speed IGBT tn 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/1XST 30N60B IXSH/1XST 30N60C ^CES Short Circuit SOA Capability • Symbol Test Conditions v CES T, =25°Cto150°C 600 V VC0R ^ 600 V v GES Continuous	OCR Scan	30N60B 30N60C Cto150 O-247AD O-268	PDF
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	30N60C2 IC110 O-268 O-247	PDF
ixkp30n60c5 Contextual Info: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information ID25 = 30 A = 600 V VDSS RDS on max = 0.125 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)	Original	30N60C5 30N60C5 O-247 O-220 Application50 ixkp30n60c5	PDF
30N60C2 Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	30N60C2 IC110 O-268 O-247 30N60C2	PDF
30N60C2D1 Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	30N60C2D1 IC110 O-247 O-268	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF

30N60C Search Results

30N60C Price and Stock

IXYS Corporation IXGH30N60C3D1

Infineon Technologies AG AIKW30N60CTXKSA1

IXYS Corporation IXSH30N60C

IXYS Corporation IXGP30N60C3

IXYS Corporation IXKH30N60C5

30N60C Datasheets (2)

30N60C Datasheets Context Search

30n60b

30n60c

30N60B

DSA003710

MOSFET IXYS TO-220

UPS SIEMENS

30n60b

30N60C2

30N60C2D1

IGBT GS

30N60C

ixkp30n60c5

30N60C2

30N60C2D1

B1116