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    30N60C Search Results

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    30N60C Price and Stock

    IXYS Corporation IXGH30N60C3D1

    IGBT 600V 60A TO-247AD
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    DigiKey IXGH30N60C3D1 Tube 1,373 1
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    Mouser Electronics IXGH30N60C3D1 287
    • 1 $6.07
    • 10 $5.88
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    TTI IXGH30N60C3D1 Tube 60 30
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    Infineon Technologies AG AIKW30N60CTXKSA1

    IGBT TRENCH FS 600V 60A TO-247-3
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    DigiKey AIKW30N60CTXKSA1 Tube 254 1
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    Avnet Americas AIKW30N60CTXKSA1 Tube 20 Weeks 240
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    Mouser Electronics AIKW30N60CTXKSA1 286
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    Newark AIKW30N60CTXKSA1 Bulk 337 1
    • 1 $7.46
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    TME AIKW30N60CTXKSA1 1
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    EBV Elektronik AIKW30N60CTXKSA1 21 Weeks 240
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    Rochester Electronics LLC HGTG30N60C3

    IGBT 600V 63A SUPER-247
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    DigiKey HGTG30N60C3 Bulk 124
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    IXYS Corporation IXGT30N60C2

    IGBT PT 600V 70A TO-268AA
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    DigiKey IXGT30N60C2 Tube
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    IXYS Corporation IXGP30N60C3

    IGBT PT 600V 60A TO-220-3
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    DigiKey IXGP30N60C3 Tube 50
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    Bristol Electronics IXGP30N60C3 200
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    30N60C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    30N60C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    30N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    30N60C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30n60b

    Abstract: 30N60 30N60C ic 931
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


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    30N60C5 O-247 20090209d PDF

    30n60c

    Abstract: No abstract text available
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW


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    30N60B 30N60C O-247 O-268 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    30N60B 30N60C O-268 PDF

    30N60B

    Abstract: 30N60C
    Text: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    30N60B 30N60C O-247 O-268 30N60C PDF

    DSA003710

    Abstract: No abstract text available
    Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS


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    30N60C5 O-247 20070625a DSA003710 PDF

    MOSFET IXYS TO-220

    Abstract: No abstract text available
    Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP)


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    30N60C5 O-247 O-220 MOSFET IXYS TO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


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    30N60C5 O-247 20080310b PDF

    UPS SIEMENS

    Abstract: 30N60C siemens servo motor siemens igbt
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)


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    30N60C2 IC110 O-220 UPS SIEMENS 30N60C siemens servo motor siemens igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


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    30N60C2D1 IC110 O-247 O-268 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


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    30N60C5 O-247 20080523c PDF

    30N60C2

    Abstract: 728B1 123B1
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


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    30N60C2 30N60C2 IC110 O-268 O-247 065B1 728B1 123B1 PDF

    30N60C2D1

    Abstract: v922
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


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    30N60C2D1 IC110 O-247 O-268 065B1 728B1 123B1 v922 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 30N60C5M ID25 = 10 A VDSS = 600 V RDS on max = 0.125 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    30N60C5M O-220 20080310a PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S  D(TAB) Features MOSFET Conditions VDSS


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    30N60C5 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C limited by leads 70


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    30N60C2 IC110 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS


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    30N60C5 O-247 20070625a PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


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    30N60C2 IC110 O-268 O-247 PDF

    ixkp30n60c5

    Abstract: No abstract text available
    Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information ID25 = 30 A = 600 V VDSS RDS on max = 0.125 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


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    30N60C5 30N60C5 O-247 O-220 Application50 ixkp30n60c5 PDF

    30N60C2

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


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    30N60C2 IC110 O-268 O-247 30N60C2 PDF

    30N60C2D1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


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    30N60C2D1 IC110 O-247 O-268 PDF

    30n60b

    Abstract: B2045
    Text: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan
    30N60B 30N60C 30n60b B2045 PDF

    30N60C

    Abstract: No abstract text available
    Text: n ix Y S ADVANCED TECHNICAL INFORMATION VCES High Speed IGBT tn 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/1XST 30N60B IXSH/1XST 30N60C ^CES Short Circuit SOA Capability • Symbol Test Conditions v CES T, =25°Cto150°C 600 V VC0R ^ 600 V v GES Continuous


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    30N60B 30N60C Cto150 O-247AD O-268 PDF

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan
    O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1 PDF