IXFN Search Results

73N30

Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
Contextual Info: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK

24N100

Abstract: 23N10 125OC
Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

230N10

Abstract: IXFN 230N10 230N10
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IRM-38

Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings

MOSFET 60n60

Abstract: 60N60 transistor 60N60 TAB 429 H
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR

80n48

Abstract: 80N4
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN)

IXFN 130N30

Abstract: 130N30 125OC
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS on = 22 mΩ trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300

36N60

Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)

E 150N10

Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C

NC240

Abstract: IXFN200N07
Contextual Info: HiPerFETTM Power MOSFET IXFN 200 N07 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions VDSS T J = 25°C to 150°C 70 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 70 V VGS Continuous ±20 V VGSM

IXFN106N20

Contextual Info: HiPerFETTM Power MOSFET IXFN 106 N20 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000V 36A 0.24Q V,DSS ^D25 R,DS on N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions v DSS Td = 25°C to 150°C

200N10P

Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Mosfet 75V 120A

Abstract: Power Mosfet 75V 120A IXFN240N15T2
Contextual Info: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

IXFN320N17T2

Abstract: ixfn320n 320N17T2
Contextual Info: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

ixfn420n10t

Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
Contextual Info: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 280N07 VDSS ^D25 R DS on Kr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr V — 280 A 6 mQ < 250 ns 70 s Maximum Ratings Symbol Test C onditions V v DSS

BT 1496

Abstract: 34N80 diode 931 p 7
Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr RDS on D S Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS VGSM Continuous Transient

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500

TO-238

Abstract: sn 8400
Contextual Info: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_

RM338

Abstract: qfl 289 106N20 IXFK90N20
Contextual Info: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2

680-W

Abstract: 180N15P IXFN180N15P
Contextual Info: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous

Contextual Info: HiPerFET Power MOSFETs IXFN26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 ^ D S o n K Symbol TestConditions V DSS Tj = 25°C to 150°C Voo* TJ Vos VGSM 1» Tc= 25°C, Chip capability •dm u Tc= 25°C, puise width limited by TJM

Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ