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    IXFN Price and Stock

    Littelfuse Inc IXFN360N10T

    MOSFET N-CH 100V 360A SOT-227B
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    DigiKey IXFN360N10T Tube 1,183 1
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    Verical IXFN360N10T 274 1
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    Arrow Electronics IXFN360N10T 274 25 Weeks 1
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    RS IXFN360N10T Bulk 8 Weeks 10
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    Littelfuse Inc IXFN32N100P

    MOSFET N-CH 1000V 27A SOT-227B
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    DigiKey IXFN32N100P Tube 623 1
    • 1 $37.75
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    Littelfuse Inc IXFN60N80P

    MOSFET N-CH 800V 53A SOT-227B
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    DigiKey IXFN60N80P Tube 371 1
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    RS IXFN60N80P Bulk 8 Weeks 10
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    Littelfuse Inc IXFN140N30P

    MOSFET N-CH 300V 110A SOT-227B
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    DigiKey IXFN140N30P Tube 313 1
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    RS IXFN140N30P Bulk 8 Weeks 10
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    Littelfuse Inc IXFN100N65X2

    MOSFET N-CH 650V 78A SOT227B
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    DigiKey IXFN100N65X2 Tube 298 1
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    Quest Components IXFN100N65X2 400
    • 1 $48.836
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    CoreStaff Co Ltd IXFN100N65X2 500
    • 1 $30.218
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    IXFN Datasheets (180)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN100N10 IXYS HIPERFET Power MOSFTETs Scan PDF
    IXFN100N10 Sharp 100 V, 100 A, HIPerFET power MOSFET Scan PDF
    IXFN100N10S1 IXYS 100V HiPerFET power MOSFET with schottky diodes Original PDF
    IXFN100N10S2 IXYS 100V HiPerFET power MOSFET with schottky diodes Original PDF
    IXFN100N10S3 IXYS 100V HiPerFET power MOSFET with schottky diodes Original PDF
    IXFN100N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFN100N25 IXYS 250V HiPerFET power MOSFET Original PDF
    IXFN100N50P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 90A SOT-227B Original PDF
    IXFN100N50Q3 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 82A SOT-227 Original PDF
    IXFN100N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    IXFN102N30P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 88A SOT227B Original PDF
    IXFN102N30P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFN106N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFN110N60P3 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 600V 90A SOT227 Original PDF
    IXFN110N85X IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 850V 110A SOT227B Original PDF
    IXFN120N20 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 120A SOT-227B Original PDF
    IXFN120N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFN120N20 IXYS HiperFET Power Mosfets Original PDF
    IXFN120N20P IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFN120N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 108A SOT-227 Original PDF
    ...

    IXFN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    73N30

    Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
    Text: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    Original     		O-264 73N30 "SOT-227 B" dimensions SOT-227 Package ixfk73n30 PDF

    24N100

    Abstract: 23N10 125OC
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC PDF

    230N10

    Abstract: IXFN 230N10 230N10
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		230N10 230N10 IXFN 230N10 230N10 PDF

    IRM-38

    Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


    Original     		O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20 PDF

    MOSFET 60n60

    Abstract: 60N60 transistor 60N60 TAB 429 H
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR


    Original     		60N60 OT-227 E153432 MOSFET 60n60 transistor 60N60 TAB 429 H PDF

    80n48

    Abstract: 80N4
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN)


    Original     		80N48 OT-227 E153432 80n48 80N4 PDF

    IXFN 130N30

    Abstract: 130N30 125OC
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS on = 22 mΩ trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original     		130N30 125OC 728B1 IXFN 130N30 130N30 125OC PDF

    36N60

    Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)


    Original     		32N60 36N60 36N60 32N60 250ns O-264 IXFN SOT227 fast diode SOT-227 D-68623 PDF

    E 150N10

    Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
    Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10 PDF

    NC240

    Abstract: IXFN200N07
    Text: HiPerFETTM Power MOSFET IXFN 200 N07 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions VDSS T J = 25°C to 150°C 70 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 70 V VGS Continuous ±20 V VGSM


    Original     		PDF

    IXFN106N20

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 106 N20 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous


    Original     		IXFN106N20 IXFN106N20 PDF

    200N10P

    Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS PDF

    Mosfet 75V 120A

    Abstract: Power Mosfet 75V 120A IXFN240N15T2
    Text: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


    Original     		IXFN240N15T2 140ns OT-227 E153432 240N15T2 Mosfet 75V 120A Power Mosfet 75V 120A IXFN240N15T2 PDF

    IXFN520N075T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		IXFN520N075T2 OT-227 E153432 520N075T2 IXFN520N075T2 PDF

    ixfn420n10t

    Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
    Text: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


    Original     		IXFN420N10T 140ns OT-227 E153432 420N10T ixfn420n10t 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16 PDF

    BT 1496

    Abstract: 34N80 diode 931 p 7
    Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr RDS on D S Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS VGSM Continuous Transient


    Original     		34N80 BT 1496 34N80 diode 931 p 7 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500


    Original     		80N50 OT-227 E153432 PDF

    680-W

    Abstract: 180N15P IXFN180N15P
    Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous


    Original     		180N15P 03-23-06-C 680-W 180N15P IXFN180N15P PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000V 36A 0.24Q V,DSS ^D25 R,DS on N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions v DSS Td = 25°C to 150°C


    OCR Scan     		36N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 280N07 VDSS ^D25 R DS on Kr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr V — 280 A 6 mQ < 250 ns 70 s Maximum Ratings Symbol Test C onditions V v DSS


    OCR Scan     		280N07 PDF

    TO-238

    Abstract: sn 8400
    Text: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_


    OCR Scan     		1300C IXFN100N10 O-238 O-238 TO-238 sn 8400 PDF

    RM338

    Abstract: qfl 289 106N20 IXFK90N20
    Text: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2


    OCR Scan     		IXFK90N20 IXFN106N20 90N20 106N20 200ns 20mi2 200ns d68623 106N20 RM338 qfl 289 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFN26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 ^ D S o n K Symbol TestConditions V DSS Tj = 25°C to 150°C Voo* TJ Vos VGSM 1» Tc= 25°C, Chip capability •dm u Tc= 25°C, puise width limited by TJM


    OCR Scan     		IXFN26N90 OT-227 E153432 1509C, PDF