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    180N15P Search Results

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    180N15P Price and Stock

    Littelfuse Inc IXFR180N15P

    MOSFET N-CH 150V 100A ISOPLUS247
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    DigiKey IXFR180N15P Tube 300
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    Newark IXFR180N15P Bulk 300
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    RS IXFR180N15P Bulk 8 Weeks 30
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    IXYS Corporation IXFN180N15P

    MOSFET Modules 180 Amps 150V 0.011 Rds
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    Mouser Electronics IXFN180N15P 1,283
    • 1 $28.68
    • 10 $21.16
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    Bristol Electronics IXFN180N15P 336
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    TTI IXFN180N15P Tube 300
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    TME IXFN180N15P 2 1
    • 1 $24.44
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    New Advantage Corporation IXFN180N15P 22 1
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    Vyrian IXFN180N15P 263
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    IXYS Corporation IXTK180N15P

    MOSFETs 180 Amps 150V 0.01 Ohm Rds
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    Mouser Electronics IXTK180N15P 1,139
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    Newark IXTK180N15P Bulk 1
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    TTI IXTK180N15P Tube 300
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    TME IXTK180N15P 169 1
    • 1 $13.81
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    Chip 1 Exchange IXTK180N15P 15
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    New Advantage Corporation IXTK180N15P 146 1
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    IXYS Corporation IXFX180N15P

    MOSFETs 180 Amps 150V 0.011 Ohm Rds
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    Mouser Electronics IXFX180N15P
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    TTI IXFX180N15P Tube 300
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    TME IXFX180N15P 20 1
    • 1 $15.49
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    New Advantage Corporation IXFX180N15P 24 1
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    IXYS Corporation IXFR180N15P

    MOSFETs 94 Amps 150V 0.011 Rds
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    TTI IXFR180N15P Tube 300
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    TME IXFR180N15P 1
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    New Advantage Corporation IXFR180N15P 24 1
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    180N15P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    I 508 V

    Abstract: 180N15P IXTK180N15P
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VDSS VGSM Continuous


    Original     		180N15P I 508 V 180N15P IXTK180N15P PDF

    680-W

    Abstract: 180N15P IXFN180N15P
    Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous


    Original     		180N15P 03-23-06-C 680-W 180N15P IXFN180N15P PDF

    180n15p

    Abstract: 180N15 PLUS247 IXFX180N15P
    Text: PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		180N15P -55ombs 180n15p 180N15 PLUS247 IXFX180N15P PDF

    IXTK180N15P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 10 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VDSS VGSM


    Original     		180N15P IXTK180N15P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 10 m Ω IXTK 180N15P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VDSS VGSM


    Original     		180N15P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous


    Original     		180N15P OT-227 E153432 03-23-06-C PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr IXFK 180N15P IXFX 180N15P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		180N15P PDF

    180N15

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ IXFK 180N15P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100


    Original     		180N15P O-264 180N15 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 180N15P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = = ≤ ≤ 150 V 100 A Ω 13 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		180N15P ISOPLUS247TM 03-23-06-C PDF

    IXFR 180N15P

    Abstract: fd 715 ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 180N15P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = = ≤ ≤ 150 V 100 A Ω 13 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C


    Original     		180N15P ISOPLUS247TM 03-23-06-C IXFR 180N15P fd 715 ISOPLUS247 PDF

    IXFK180N15P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM HiPerFET Power MOSFET IXFK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 150 150 V V VDSS VGSM


    Original     		180N15P O-264 IXFK180N15P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF