80N4 Search Results

80n48

Abstract: 80N4
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN)

Contextual Info: Or, Call Customer Service at 1-80N48-B132 USA Only OPA121 BURR-BROWN m i CM £ o FEATURES APPLICATIONS • • • • • • • • • • • LOW NOISE: 6nV//Hz typ at 10kHz LOW BIAS CURRENT: 5pA max LOW OFFSET: 2mV max LOW DRIFT: 3nV/°C typ HIGH OPEN-LOOP GAIN: 110dB min

HQ700-80N4

Abstract: 80N4
Contextual Info: Surface Mount 4-Port Quadrature Hybrid 70 MHz, 10% Bandwidth Package Style 80 HQ700-80N4 Key Features • • • Insertion Loss: 0.20 dB Solder Reflow to +240°C Phase Balance 2 degrees Guaranteed Specifications TYP ±1 MAX ±3 ± 0.25 ± 0.50 Insertion Loss dB

80N40

Abstract: 80N4 80N40B2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 80N40B2 Optimized for 10-30 KHz hard switching and up to 300 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Symbol VDSS ID25 Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 480

Contextual Info: 80N4LL N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LL 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

80N4

Contextual Info: 80N4LL N-CHANNEL 40 V - 0.0045 Ω - 80 A PowerSO-8 STripFET™ MOSFET FOR DC-DC CONVERSION TARGET SPECIFICATION Table 1: General Features TYPE 80N4LL • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 40 V < 0.005 Ω 80 A TYPICAL RDS(on) = 0.0045 Ω @ 10V

JESD97

Abstract: STSJ80N4LLF3
Contextual Info: 80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LLF3 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

Contextual Info: 80N4F6 N-channel 40 V, 5.8 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in a IPAK package Datasheet − production data Features TAB Order code VDS RDS on max ID 80N4F6 40 V 6.3 mΩ 80 A • Low gate charge 3 • Very low on-resistance 2 1

Contextual Info: 80N4F6 Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet − production data Features TAB Order code VDS RDS on max ID 80N4F6 40 V 6 mΩ 80 A • Designed for automotive applications and

Contextual Info: 80N4F6, 80N4F6 N-channel 40 V, 5.5 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in DPAK and IPAK packages Datasheet − production data Features Order codes 80N4F6 TAB TAB 80N4F6 3 3 2 1 1 DPAK VDS RDS on max 6.0 mΩ 40 V ID 80 A 6.3 mΩ

Contextual Info: 80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LLF3 40V 0.005Ω 18A(1) ) s ( ct 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

JESD97

Abstract: STSJ80N4LLF3
Contextual Info: 80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LLF3 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V