Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFB40N110P Search Results

    SF Impression Pixel

    IXFB40N110P Price and Stock

    Littelfuse Inc IXFB40N110P

    MOSFET N-CH 1100V 40A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB40N110P Tube 32 1
    • 1 $35.34
    • 10 $35.34
    • 100 $34.6168
    • 1000 $34.6168
    • 10000 $34.6168
    		Buy Now
    Newark IXFB40N110P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $36.28
    • 10000 $36.28
    		Buy Now
    RS IXFB40N110P Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $53.54
    • 1000 $53.54
    • 10000 $53.54
    		Get Quote

    IXYS Corporation IXFB40N110P

    MOSFETs 40 Amps 1100V 0.2600 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFB40N110P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $34.61
    • 10000 $34.61
    		Get Quote
    TTI IXFB40N110P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $34.62
    • 10000 $34.62
    		Buy Now

    IXFB40N110P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB40N110P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 40A PLUS264 Original PDF

    IXFB40N110P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFB40N110P

    Abstract: IXFB 40N110P 40n110p F40N
    Text: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A IXFB40N110P IXFB 40N110P F40N

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS = 1100V ID25 = 40A Ω RDS on ≤ 260mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB40N110P 300ns PLUS264TM 40N110P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB40N110P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarVHVTM HiPerFET Power MOSFET IXFB40N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS PLUS264TM (IXFB)


    Original     		PDF IXFB40N110P 300ns PLUS264TM 338B2

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P