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    F40N Price and Stock

    onsemi NSR05F40NXT5G

    DIODE SCHOTTKY 40V 500MA 2DSN
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    DigiKey NSR05F40NXT5G Reel 115,000 5,000
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    NSR05F40NXT5G Cut Tape 114,561 1
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    NSR05F40NXT5G Digi-Reel 114,561 1
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    Avnet Americas NSR05F40NXT5G Reel 14 Weeks 10,000
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    NSR05F40NXT5G Reel 14 Weeks 10,000
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    Mouser Electronics NSR05F40NXT5G 44,498
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    Newark NSR05F40NXT5G Bulk 5,576 5
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    Bristol Electronics NSR05F40NXT5G 8,624
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    NSR05F40NXT5G 3,778
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    Rochester Electronics NSR05F40NXT5G 1,198,075 1
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    TME NSR05F40NXT5G 1
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    Chip 1 Exchange NSR05F40NXT5G 3,737
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    Avnet Asia NSR05F40NXT5G 14 Weeks 10,000
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    Avnet Silica NSR05F40NXT5G 5,000 15 Weeks 5,000
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    Flip Electronics NSR05F40NXT5G 132,000
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    Master Electronics NSR05F40NXT5G 99,750
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    New Advantage Corporation NSR05F40NXT5G 80,000 1
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    Vyrian NSR05F40NXT5G 114,823
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    Win Source Electronics NSR05F40NXT5G 73,613
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    Wuhan P&S NSR05F40NXT5G 2,875 1
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    onsemi NSR10F40NXT5G

    DIODE SCHOTTKY 40V 1A 2DSN
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    DigiKey NSR10F40NXT5G Reel 40,000 5,000
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    Avnet Americas NSR10F40NXT5G Reel 0 Weeks, 2 Days 6,579
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    Mouser Electronics NSR10F40NXT5G 71,773
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    Newark NSR10F40NXT5G Cut Tape 4,721 5
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    Avnet Asia NSR10F40NXT5G 15 Weeks 10,000
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    Avnet Silica NSR10F40NXT5G 16 Weeks 5,000
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    EBV Elektronik NSR10F40NXT5G 17 Weeks 5,000
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    New Advantage Corporation NSR10F40NXT5G 5,000 1
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    Vyrian NSR10F40NXT5G 9,649
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    Win Source Electronics NSR10F40NXT5G 38,877
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    Wuhan P&S NSR10F40NXT5G 2,890 1
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    onsemi SNSR05F40NXT5G

    0402 FC SCHOTTKY DIODES
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    DigiKey SNSR05F40NXT5G Digi-Reel 4,800 1
    • 1 $0.53
    • 10 $0.327
    • 100 $0.53
    • 1000 $0.13948
    • 10000 $0.12547
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    SNSR05F40NXT5G Cut Tape 4,800 1
    • 1 $0.53
    • 10 $0.327
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    • 1000 $0.13948
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    Avnet Americas SNSR05F40NXT5G Reel 17 Weeks 10,000
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    Mouser Electronics SNSR05F40NXT5G
    • 1 $0.5
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    • 100 $0.199
    • 1000 $0.122
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    Rochester Electronics SNSR05F40NXT5G 30,000 1
    • 1 $0.0917
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    Flip Electronics SNSR05F40NXT5G 4,100
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    onsemi NSR20F40NXT5G

    DIODE SCHOTTKY 40V 2A 2DSN
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    DigiKey NSR20F40NXT5G Cut Tape 2,955 1
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    Avnet Americas NSR20F40NXT5G Reel 8 Weeks 5,000
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    Mouser Electronics NSR20F40NXT5G 5,951
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    Newark NSR20F40NXT5G Cut Tape 4,887 5
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    Rochester Electronics NSR20F40NXT5G 945,157 1
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    Chip 1 Exchange NSR20F40NXT5G 1,040
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    Avnet Asia NSR20F40NXT5G 5,000 8 Weeks 5,000
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    Avnet Silica NSR20F40NXT5G 5,000 9 Weeks 5,000
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    Chip One Stop NSR20F40NXT5G Cut Tape 2,818 0 Weeks, 1 Days 5
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    EBV Elektronik NSR20F40NXT5G 10 Weeks 5,000
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    Master Electronics NSR20F40NXT5G 10,000
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    New Advantage Corporation NSR20F40NXT5G 30,000 1
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    Vyrian NSR20F40NXT5G 231,790
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    Win Source Electronics NSR20F40NXT5G 25,000
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    onsemi NSVR05F40NXT5G

    DIODE SCHOTTKY 40V 500MA 2DSN
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    DigiKey NSVR05F40NXT5G Digi-Reel 2,865 1
    • 1 $0.42
    • 10 $0.281
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    NSVR05F40NXT5G Cut Tape 2,865 1
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    Avnet Americas NSVR05F40NXT5G Reel 8 Weeks 10,000
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    NSVR05F40NXT5G Reel 8 Weeks 10,000
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    Mouser Electronics NSVR05F40NXT5G 7,100
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    Newark NSVR05F40NXT5G Cut Tape 1,600 5
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    TME NSVR05F40NXT5G 1
    • 1 $0.451
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    Chip 1 Exchange NSVR05F40NXT5G 15,440
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    Avnet Asia NSVR05F40NXT5G 8 Weeks 10,000
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    Avnet Silica NSVR05F40NXT5G 9 Weeks 5,000
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    New Advantage Corporation NSVR05F40NXT5G 5,000 1
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    Find more F40N price and stock on Findchips.com

    F40N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F40NF06

    Abstract: STF40NF06 F40NF0 TRANSISTOR mosfet 30V 40A switching TRANSISTOR mosfet 30V 40A K/TO-92 Marking STMicroelectronics
    Text: F40NF06 N-CHANNEL 60V - 0.024Ω - 23A - TO-220FP STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID F40NF06 60 V < 0.028 Ω 23 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.024Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100°C


    Original     		STF40NF06 O-220FP F40NF06 STF40NF06 F40NF0 TRANSISTOR mosfet 30V 40A switching TRANSISTOR mosfet 30V 40A K/TO-92 Marking STMicroelectronics PDF

    P40NF03

    Abstract: P40NF03L F40NF03L p40nf 70125 STP40NF03L 7025W 2816A
    Text: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP


    Original     		STF40NF03L STP40NF03L O-220, O-220FP O-220 P40NF03 P40NF03L F40NF03L p40nf 70125 STP40NF03L 7025W 2816A PDF

    F40N10LE

    Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
    Text: S E M I C O N D U C T O R RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω


    Original     		RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM O-247 175oC F40N10LE 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L PDF

    F40N10LE

    Abstract: FP40N10L FG40N10L
    Text: inter«! RFG40N10LE, RFP40N10LE, RF1S40N10LESM D a ta S h e e t 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    OCR Scan     		RFG40N10LE, RFP40N10LE, RF1S40N10LESM TA49163. RF1S40N10LESM AN7254 AN7260. F40N10LE FP40N10L FG40N10L PDF

    40n10le

    Abstract: F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet January 2002 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L PDF

    transistor d90 smd

    Abstract: Type NS ceramic cap MIL-PRF-49464 F25CG0R2M1PX3 G10XXKITAPX05 bd-bj gap capacitors N220 P105 C11AH
    Text: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of


    Original     		PDF

    40n10le

    Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10 PDF

    f40n10le

    Abstract: No abstract text available
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet Title FG4 10L P40 0LE 1S4 10L M bt A, 0V, 40 m, gic vel anwer OSTs) utho October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		RFG40N10LE, RFP40N10LE, RF1S40N10LESM f40n10le PDF

    25t65

    Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
    Text: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221


    Original     		100/300/W 100/300W 1000PAR64Q/MFL 1000PAR64Q/NSP 1000PAR64Q/WFL 1000T3 1000T3Q/P/CL 00-90A/99EW 25t65 tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830 PDF

    262E-9

    Abstract: No abstract text available
    Text: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFG40N10LE, RFP40N10LE, RF1S40N10LESM 33e-3 00e-5) 98e-3 38e-6) 262E-9 PDF

    F40N20

    Abstract: STF40N20 STP40N20-STF40N20 W40N20 STB40N20 STP40N20 STW40N20 P40N b40n
    Text: STP40N20-F40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/FP/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET Table 1: General Features TYPE STP40N20 STW40N20 STB40N20 F40N20 • ■ ■ ■ ■ ■ VDSS 200 200 200 200 V V V V Figure 1: Package


    Original     		STP40N20-STF40N20 STB40N20 STW40N20 O-220/FP/TO-247/D2PAK STP40N20 STB40N20 STF40N20 F40N20 STF40N20 STP40N20-STF40N20 W40N20 STP40N20 STW40N20 P40N b40n PDF

    F40N10LE

    Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
    Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V


    OCR Scan     		RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 33e-3 00e-5) 38e-6) F40N10LE 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    Untitled

    Abstract: No abstract text available
    Text: F40NF06 N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID F40NF06 60V <0.028Ω 23A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested


    Original     		STF40NF06 O-220FP PDF

    P40NF03L

    Abstract: F40NF0 F40NF03L P40NF03 STP40NF03L STF40NF03L 6794
    Text: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP


    Original     		STF40NF03L STP40NF03L O-220, O-220FP O-220 P40NF03L F40NF0 F40NF03L P40NF03 STP40NF03L STF40NF03L 6794 PDF

    Bi-Cap

    Abstract: No abstract text available
    Text: Binary Tunable Caps for SLC Hybrids Bi-Cap Functional Applications: Matching Networks, Tank Cicuits, Dielectric resonator tuning/coupling. C1 C1 = 1 C2 = 2 x C 1 C3 = 4 x C 1 4 Pad C4 = 8 x C1 C2 C3 Benefits: • Small size is compatible with microwave geometries.


    Original     		F15CGR08M5PX3 F15NR0R1M1PX3 F20CG0R1M1PX3 Bi-Cap PDF

    F40NF06

    Abstract: F40NF0
    Text: F40NF06 N-CHANNEL 60A - 0.024Ω - 23A - TO-220 STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID F40NF06 60 V < 0.028 Ω 23 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.024Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100°C


    Original     		STF40NF06 O-220 O-220FP F40NF06 F40NF0 PDF

    P40NF03L

    Abstract: P40NF03 P40NF0 STP40NF03L F40NF0
    Text: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP


    Original     		STF40NF03L STP40NF03L O-220, O-220FP O-220 P40NF03L P40NF03 P40NF0 STP40NF03L F40NF0 PDF

    P40NF03L

    Abstract: 6794
    Text: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device 1 Application ■ TO-220 2 3 3 1 2 TO-220FP


    Original     		STF40NF03L STP40NF03L O-220, O-220FP O-220 P40NF03L 6794 PDF

    Untitled

    Abstract: No abstract text available
    Text: H A R R RFG40N10LE, RFP40N10LE, RF1S40N1 OLE, RF1S40N1OLESM IS semiconductor 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 40 A, 100V r D S O N = 0.040Q • 2kV ESD Protected


    OCR Scan     		RFG40N10LE, RFP40N10LE, RF1S40N1 RF1S40N1OLESM O-247 RF1S40N10LE, RF1S40N10LESM O-263AB PDF

    F40NF06

    Abstract: F40NF0 F40NF STF40NF06 JESD97
    Text: F40NF06 N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID F40NF06 60V <0.028Ω 23A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested


    Original     		STF40NF06 O-220FP F40NF06 F40NF0 F40NF STF40NF06 JESD97 PDF