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    Littelfuse Inc IXDN614SI

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey IXDN614SI Tube 14,768 1
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    IXDN614SI 633 1
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    Quest Components IXDN614SI 784
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    CoreStaff Co Ltd IXDN614SI 980
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    New Advantage Corporation IXDN614SI 200 1
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    Littelfuse Inc IXDN614SITR

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey IXDN614SITR Digi-Reel 3,729 1
    • 1 $5.82
    • 10 $3.826
    • 100 $2.7167
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    IXDN614SITR Cut Tape 3,729 1
    • 1 $5.82
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    IXDN614SITR Reel 2,000 2,000
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    Littelfuse Inc IXDN614YI

    IC GATE DRVR LOW-SIDE TO263-5
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    DigiKey IXDN614YI Tube 1,382 1
    • 1 $6.93
    • 10 $4.604
    • 100 $3.3088
    • 1000 $2.7885
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    Verical IXDN614YI 300 300
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    Arrow Electronics IXDN614YI 300 11 Weeks 300
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    Newark IXDN614YI Bulk 51 1
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    RS IXDN614YI Bulk 8 Weeks 50
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    Littelfuse Inc IXDN614PI

    IC GATE DRVR LOW-SIDE 8DIP
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    DigiKey IXDN614PI Tube 330 1
    • 1 $3.95
    • 10 $2.539
    • 100 $1.7552
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    Verical IXDN614PI 717 44
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    RS IXDN614PI Bulk 8 Weeks 50
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    Littelfuse Inc IXDN614CI

    IC GATE DRVR LOW-SIDE TO220-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXDN614CI Tube 193 1
    • 1 $6.93
    • 10 $4.604
    • 100 $3.3088
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    Verical IXDN614CI 985 21
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    IXDN614CI 15 3
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    • 100 $2.685
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    Arrow Electronics IXDN614CI 15 1
    • 1 $3.626
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    Newark IXDN614CI Bulk 985 1
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    RS IXDN614CI Bulk 8 Weeks 50
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    IXDN614 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXDN614CI IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 5PIN TO-220 NON INVERTING Original PDF
    IXDN614PI IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 8 PIN DIP NON INVERTING Original PDF
    IXDN614SI IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 8SOIC EXP MTL NON INVERTING Original PDF
    IXDN614SITR IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 8SOIC EXP MTL NON INVERTING Original PDF
    IXDN614YI IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 5LEAD TO-263 NON INVERTING Original PDF

    IXDN614 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		CH-2555 N1016, IXEP1400 CPC1706 CPC1020N PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC


    Original     		AN-10A: Oct-2011. Nov-2011. GA06JT12-247 PDF

    IXYS’ Clare Introduces 2 New Gate Driver Families

    Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA20SICP12-263 O-263 SIPC12 GA20SIPC12 00E-47 26E-28 98E-10 22E-09 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA05JT12-263 O-263 GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA100SICP12-227 OT-227 ReSIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA16JT17-247 O-247AB GA16JT17 03E-47 72E-28 68E-10 72E-09 00E-03 PDF

    IXDD614

    Abstract: IXDN614
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R00J PDF

    IXDN614

    Abstract: IXDD614 IXDI614 ixdd614pi IXDD614YI IXDI614YI IXDN614PI IXDD614CI IXDD614SI TO-220AB 5-lead
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R00H ixdd614pi IXDD614YI IXDI614YI IXDN614PI IXDD614CI IXDD614SI TO-220AB 5-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50


    Original     		AN-10B: AN-10A Nov-2011. GA06JT12-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA50SICP12-227 OT-227 Redu50SIPC12 GA50SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03 PDF

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844 PDF

    IXDN614

    Abstract: IXDN614YI IXDN614SI TO220 land pattern IXDD614CI 614CI IXDD614SI IXDD614YI
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R05 IXDN614YI IXDN614SI TO220 land pattern IXDD614CI 614CI IXDD614SI IXDD614YI PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA20JT12-263 O-263 GA20JT12 00E-47 26E-28 98E-10 22E-9 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor -VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2 PDF

    IXDD614

    Abstract: IXDD614CI IXDD614YI IXDI614 IXDI614PI IXDD614PI IXDD614SI IXDD614SITR IXDN614 IXDN614PI
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R01 IXDD614CI IXDD614YI IXDI614PI IXDD614PI IXDD614SI IXDD614SITR IXDN614PI PDF

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original     		N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R02 PDF

    IXDN614

    Abstract: IXDD614 IXDI614 IXDD614CI IXDI614PI 614CI IXDN614PI IXDN614YI IXDN614SI IXDD614PI
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R02 IXDD614CI IXDI614PI 614CI IXDN614PI IXDN614YI IXDN614SI IXDD614PI PDF

    IXDD614

    Abstract: 614CI
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R00F 614CI PDF

    IXDD614CI

    Abstract: ixdd614
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R04 IXDD614CI PDF

    ixdd614

    Abstract: IXDI614 ixdd614ci JEDEC standard 033 ixdn614si 614C IXDD614YI
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		14-Ampere IXDD614 IXDI614 IXDN614 614-R03 ixdd614ci JEDEC standard 033 ixdn614si 614C IXDD614YI PDF