GA50SIPC12 Search Results

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA50SICP12-227 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50SICP12-227. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 26-MAR-2015 $ * * GeneSiC Semiconductor Inc.

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch