IXBH 9N160 Search Results

IXBH 9N160 Price and Stock

Filter by Manufacturer


IXYS Corporation IXBH9N160G IGBT 1600V 9A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH9N160G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXBH9N160G		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXBH9N160G		1			1 $50 10 $50 100 $50 1000 $50 10000 $50	Buy Now
TTI	IXBH9N160G	Tube			30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXBH9N160G INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	IXBH9N160G		6,513			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wuhan P&S	IXBH9N160G		5,010		1	1 $19.18 10 $19.18 100 $12.24 1000 $9.28 10000 $9.28	Buy Now
IXYS Integrated Circuits Division IXBH9N160G IGBT 1600V 9A 100W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	IXBH9N160G		875			1 - 10 $10.0208 100 $6.6806 1000 $6.6806 10000 $6.6806	Buy Now

IXBH 9N160 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBH9N160		IXYS	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor		Original	PDF
IXBH 9N160		IXYS	TRANS IGBT CHIP N-CH 1600V 9A 3TO-247 AD		Original	PDF
IXBH 9N160G		IXYS	TRANS IGBT CHIP N-CH 1600V 9A 3TO-247 AD		Original	PDF
IXBH9N160G		IXYS	1600V high volatge BIMOSFET		Original	PDF

IXBH 9N160 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
15N160 Abstract: 40N160 9N160 40N140 Text: BIMOSFET TM B-Series Contents 1999 IXYS All rights reserved VDSS IC cont VCE(sat) max TC = 25 °C TC = 25°C TO-247 Page V A V 1400 1600 9 7.0 IXBH 9N140 IXBH 9N160 C4 - 2 C4 - 2 1400 1600 15 7.0 IXBH 15N140 IXBH 15N140 C4 - 4 C4 - 4 1400 1600 20 6.5 IXBH 20N140	Original	O-247 9N140 9N160 15N140 20N140 20N160 40N140 40N160 15N160 40N160 9N160 40N140	PDF
40N160 Abstract: 16N170 Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	16N170A 16N170 42N170 40N160 9N160 15N140	PDF
9n160 Abstract: No abstract text available Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140 IXBH 9N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 9A 4.9 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings	Original	9N140 9N160 O-247 9n160	PDF
9n160g Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data	Original	9N140G 9N160G O-247 9N140G 9-140/160G 9n160g IXBH 9N160G D-68623 ixbh9n160g	PDF
9N14 Abstract: No abstract text available Text: Advanced Technical Information High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140 IXBH 9N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 9A 5.8 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol	Original	9N140 9N160 O-247 9N160 9N14	PDF
9N16 Abstract: 9N160 BiMOSFET IXBH 9N160 B/9N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140 IXBH 9N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 9A 4.9 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings	Original	9N140 9N160 O-247 9N16 9N160 BiMOSFET IXBH 9N160 B/9N160	PDF
Untitled Abstract: No abstract text available Text: □ I X Y Advanced Technical Information S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor VCES IXBH 9N140 IXBH 9N160 ^C 25 V C E sa t N -C hannel, E n ha n ce m e n t M ode tfi 1400/1600 V 9A 5.8 V typ. 40 ns T O -2 4 7 A D S ym bo l C o n d itio n s	OCR Scan	9N140 9N160 D-68623	PDF
Untitled Abstract: No abstract text available Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES	Original	9N160G O-247 9-140/160G	PDF
IXBH 9N160G Abstract: IXBH9N160G 9N160G Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES	Original	9N160G O-247 9N160G 9-140/160G IXBH 9N160G IXBH9N160G	PDF
10C4 Abstract: 20N160 Text: imxYs I ~ BIM OSFET 0-Series _ Contents 1999 IX Y S All rights reserved v DSS ^C cont V CE(sat) max T c = 25 °C T c = 25°C V A V 1400 1600 9 1400 1600 TO-247 Page 7.0 IX BH 9N140 IXBH 9N160 C4-2 C4-2 15 7.0 IX B H 15N140 IX B H 15N140	OCR Scan	O-247 9N140 9N160 15N140 20N140 20N160 40N140 40N160 10C4	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6	PDF
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1	PDF
IXAN0014 Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements Text: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast	Original	IXAN0014 D-68623 IXAN0014 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements	PDF
3 phase IGBT inverter Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247 Text: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,	Original	O-247 PLUS247TM, 120N20 26N50, 5A/1600V 0A/600V 30-06AR) 000V/20A 3 phase IGBT inverter igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247	PDF

DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50	PDF
BERULUB FR 16 Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits	Original	ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF