IRHM7230
Abstract: IRHM8230
Text: PD - 90713C IRHM7230 IRHM8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90713C
IRHM7230
IRHM8230
200Volt,
1x106
IRHM7230
IRHM8230
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Untitled
Abstract: No abstract text available
Text: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)
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90713E
IRHM7230
T0-254AA)
IRHM3230
IRHM4230
IRHM8230
1000K
O-254AA
IRHM57163SED
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Untitled
Abstract: No abstract text available
Text: IRHM8230U Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55
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IRHM8230U
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f0114
Abstract: IRHM3230 IRHM4230 IRHM7230 IRHM8230
Text: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)
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90713E
IRHM7230
T0-254AA)
IRHM3230
IRHM4230
IRHM8230
1000K
O-254AA
IRHM57163SED
f0114
IRHM3230
IRHM4230
IRHM7230
IRHM8230
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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IRHM7160
Abstract: IRHM7230 IRHM8160 IRHM8230
Text: PD - 91331B IRHM7160 IRHM8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.045Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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91331B
IRHM7160
IRHM8160
100Volt,
1x106
IRHM7160
IRHM7230
IRHM8160
IRHM8230
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRHM7230
Abstract: IRHM8230 IRHN7230 IRHN8230
Text: PD - 90822B IRHN7230 IRHN8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90822B
IRHN7230
IRHN8230
200Volt,
1x106
IRHM7230
IRHM8230
IRHN7230
IRHN8230
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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IRHM7064
Abstract: IRHM7230 IRHM8064 IRHM8230 91564
Text: PD - 91564C IRHM7064 IRHM8064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.021Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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91564C
IRHM7064
IRHM8064
60Volt,
1x106
IRHM7064
IRHM7230
IRHM8064
IRHM8230
91564
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IRHM8230
Abstract: IRHM8360 IRHM7230 IRHM7360
Text: PD - 90823A IRHM7360 IRHM8360 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 400Volt, 0.22Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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0823A
IRHM7360
IRHM8360
400Volt,
1x106
IRHM8230
IRHM8360
IRHM7230
IRHM7360
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h226
Abstract: 9713A
Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I Q R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7230 IRHM8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40», MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7230
IRHM8230
1x10s
1x106
IRHM7230D
IRHM7230U
O-254
MIL-S-19500
H-226
h226
9713A
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7230 ° IRHMS230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40 2, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7230
IRHMS230
1x106
1x10s
IRHM72300
IRHM7230U
O-254
MIL-S-19500
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160i
Abstract: Elise h226 1x100 aran IRHM7230 IRHM8230 RHM7230 RHM8230 DIODE C249
Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7S30 o . IRHMS230 N-CHANNEL MEGA RAO HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARO technology HEXFETs
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IRHM823Q
33HHS
IRHM723DU
O-254
S11500
160i
Elise
h226
1x100
aran
IRHM7230
IRHM8230
RHM7230
RHM8230
DIODE C249
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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SHOCK+SENSOR+083
Abstract: No abstract text available
Text: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83
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IRH7054
IRH8054
IRH7130
IRH8130
IRH7150
IRH8150
IRH7230
IRH8230
IRH7250
IRH8250
SHOCK+SENSOR+083
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