IRGBC30KD Search Results

transistor c905

Contextual Info: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

transistor c925

Abstract: DIODE C921
Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

transistor c905

Abstract: LE C906 c912 c906 transistor
Contextual Info: P D - 9.1107 Iitemational S Rectifier IRGBC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ps @125°C, VGE= 15V • Switching-loss rating includes all "tail" losses

transistor c925

Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Contextual Info: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses

b132 transistor

Abstract: IRGBC30KD2
Contextual Info: PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

IRGBC30KD2

Contextual Info: PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

IRGBC30KD2-S

Abstract: GC smd diode AN-994 SMD-220
Contextual Info: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

motor IG 2200 19 X 000 15 R

Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
Contextual Info: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

ic c 838

Abstract: IRG4PC30KD IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

Contextual Info: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRGBC30MD2

Abstract: IRGBC30KD2 IRG4BC30KDPbF
Contextual Info: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGPH40KD2

Abstract: IRGPH20K irgph30k
Contextual Info: HIRectifier IGBTs International UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency— Optim ized for Pow er Conversion Part Number V CES Collector to Emitter Voltage M a x V CE(on) Collector to Emitter Saturation Voltage

AN-994

Abstract: IRGBC30KD2-S IRGBC30MD2-S
Contextual Info: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching

AN-994

Abstract: IRGBC30KD2-S IRGBC30MD2-S
Contextual Info: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching

AN-994

Abstract: IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode
Contextual Info: PD -91594B PRELIMINARY IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V

3 phase dc control ir2130

Abstract: igbt driver ir2130 circuit IR2130S smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IR2130J IRGBC30KD AN-985 IR2130 APPLICATIONS
Contextual Info: DESIGN TIPS International Rectifier DESIGN TIPS DT 93-6AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL（310） ）322-3331・ ・FAX（310） ）322-3332 INTERNATIONAL RECTIFIER・ モーター駆動用に極小化した パワー･エレクトロニクス

IRG4PC30KD

Abstract: IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

motor IG 2200 19 x 000 15 r

Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
Contextual Info: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

irf 44 n

Abstract: IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -94910A IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high