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    IRG4PC50U Price and Stock

    Infineon Technologies AG IRG4PC50U

    IGBT 600V 55A 200W TO247AC
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    DigiKey IRG4PC50U Bag 125
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    Win Source Electronics IRG4PC50U 2,472
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    • 100 $4.5917
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    Infineon Technologies AG IRG4PC50UPBF

    IGBT 600V 55A TO247AC
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    Win Source Electronics IRG4PC50UPBF 1,100
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    Infineon Technologies AG IRG4PC50UD-MP

    IGBT 600V 55A 200W TO247AC
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    Avnet Americas IRG4PC50UD-MP Tube 25
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    Infineon Technologies AG IRG4PC50UDPBF

    IGBT 600V 55A 200W TO247AC
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    Infineon Technologies AG IRG4PC50UD-EPBF

    IGBT 600V 55A 200W TO247-3
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    RS IRG4PC50UD-EPBF Bulk 2
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    Find more IRG4PC50U price and stock on Findchips.com

    IRG4PC50U Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4PC50U International Rectifier UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4PC50U International Rectifier UltraFast Speed IGBT VCES = 600V, VCE(on) typ. =1.65V, atVGE = 15V, IC = 27A Original PDF
    IRG4PC50U International Rectifier 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging Original PDF
    IRG4PC50U International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 55A, TO-247 Scan PDF
    IRG4PC50UD International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package; A IRG4PC50UD with Standard Packaging Original PDF
    IRG4PC50UD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Original PDF
    IRG4PC50UD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4PC50UD International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 55A, TO-247 CoPack Scan PDF
    IRG4PC50UD-E International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package; Similar to the IRG4PC50UD in a TO-247AD package longer lead option 20mm. Original PDF
    IRG4PC50UD-E International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package Original PDF
    IRG4PC50UD-EPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package; Similar to the IRG4PC50UD with longer lead and lead-free packaging. Original PDF
    IRG4PC50UD-EPBF International Rectifier Original PDF
    IRG4PC50UD-MP Infineon Technologies IGBT 600V 55A 200W TO247AC Original PDF
    IRG4PC50UDPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package; Similar to IRG4PC50UD with Lead Free Packaging Original PDF
    IRG4PC50UDPBF International Rectifier Original PDF
    IRG4PC50UPBF International Rectifier Original PDF
    IRG4PC50UPBF International Rectifier 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC50U with Lead Free Packaging Original PDF

    IRG4PC50U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4PC50U

    Abstract: IRG4PC50
    Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91470F IRG4PC50U O-247AC O-247AC IRG4PC50U IRG4PC50

    DIODE RECTIFIER BRIDGE SINGLE 55a 600v

    Abstract: IRG4PC50UDPBF power Diode 200V 10A RECTIFIER BRIDGE 25A 600V tu marking ultrafast diode 10a 400v 035H IRFPE30
    Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC50UDPbF O-247AC IRFPE30 DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50UDPBF power Diode 200V 10A RECTIFIER BRIDGE 25A 600V tu marking ultrafast diode 10a 400v 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91471B IRG4PC50UD O-247AC

    IRG4PC50UDPBF

    Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
    Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC50UDPbF O-247AC IRFPE30 IRG4PC50UDPBF DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc

    IGBT IRG4PC50UD

    Abstract: IRG4PC50UD
    Text: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		PDF IRG4PC50UD O-247AC IGBT IRG4PC50UD IRG4PC50UD

    Untitled

    Abstract: No abstract text available
    Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91470F IRG4PC50U O-247AC O-247AC 25GATE

    035H

    Abstract: D 951-86 ir igbt
    Text: PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4PC50UPbF O-247AC O-247AC 035H D 951-86 ir igbt

    IRG4PC50UD

    Abstract: IGBT IRG4PC50UD
    Text: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91471B IRG4PC50UD O-247AC IRG4PC50UD IGBT IRG4PC50UD

    035H

    Abstract: No abstract text available
    Text: PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4PC50UPbF O-247AC O-247AC 035H

    91470F

    Abstract: IRG4PC50U IRG4PC50 DSA0031117 55A TO-247AC
    Text: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91470F IRG4PC50U O-247AC O-247AC 91470F IRG4PC50U IRG4PC50 DSA0031117 55A TO-247AC

    IGBT IRG4PC50UD

    Abstract: IRG4PC50UD
    Text: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91471B IRG4PC50UD O-247AC IGBT IRG4PC50UD IRG4PC50UD

    IRG4PC50U

    Abstract: irg4pc50u equivalent
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1470D IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 1470D IRG4PC50U O-247AC O-247Am IRG4PC50U irg4pc50u equivalent

    DIODE 27A

    Abstract: marking 27A DIODE 035H IRFPE30 IRG4PC50UDPBF 55A TO-247AC t1624
    Text: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC50UDPbF O-247AC IRFPE30 DIODE 27A marking 27A DIODE 035H IRFPE30 IRG4PC50UDPBF 55A TO-247AC t1624

    Untitled

    Abstract: No abstract text available
    Text: PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4PC50UPbF O-247AC O-247AC

    IRG4PC50

    Abstract: IRG4PC50UPBF 035H
    Text: PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4PC50UPbF O-247AC O-247AC PC50UPbF IRG4PC50 IRG4PC50UPBF 035H

    IRG4PC50UD

    Abstract: No abstract text available
    Text: PD -9.1471A IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC50UD O-247AC IRG4PC50UD

    IRG4PC30S

    Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
    Text: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage


    Original     		PDF O-220 Pak/TO-262 O-220 O-247 Super247 IRGP20B120UD-E IRG4BC40K IRG4PC30K IRG4PC40K IRG4PC50K IRG4PC30S igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S

    IPM PLASMA

    Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
    Text: IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and


    Original     		PDF SIP-05 O-247AC IRG7PH30K10D IRGP20B120U-EP IRG4PH50KDPBF O-220AB; O-220 IPM PLASMA 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    250VJA

    Abstract: irg4pc50u equivalent
    Text: International IGR Rectifier PD-9.1470E IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter


    OCR Scan     		PDF 1470E IRG4PC50U O-247AC 250VJA irg4pc50u equivalent

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4PC50UD O-247AC 554S5 DDSfl51fl

    DIODE RECTIFIER BRIDGE SINGLE 55a 600v

    Abstract: IRG4PC50UD ir igbt BH rn transistor
    Text: International Rectifier IOR PD -9.1471A IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4PC50UD O-247AC DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50UD ir igbt BH rn transistor

    iger

    Abstract: IIRG4PC50U
    Text: P D -9 .1 4 7 0 D In te rn a tio n a l IO R Rectifier IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kH z in hard switching, > 200 kHz in resonant mode • Generation 4 IG B T design provides tighter


    OCR Scan     		PDF -247A IRG4PC50U iger IIRG4PC50U

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1470E International I R Rectifier IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF 1470E IRG4PC50U O-247AC 5545E