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    IRG7I Price and Stock

    International Rectifier IRG7IC30FD

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRG7IC30FD 327
    • 1 $33.2734
    • 10 $33.2734
    • 100 $26.6187
    • 1000 $25.7869
    • 10000 $25.7869
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    International Rectifier IRG7IC30FDPBF

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    Quest Components IRG7IC30FDPBF 40
    • 1 $18.7499
    • 10 $16.6666
    • 100 $15.4166
    • 1000 $15.4166
    • 10000 $15.4166
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    International Rectifier IRG7IA13UPBF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRG7IA13UPBF 35
    • 1 $5.0025
    • 10 $3.6685
    • 100 $3.335
    • 1000 $3.335
    • 10000 $3.335
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    International Rectifier IRG7I313U

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    Quest Components IRG7I313U 32
    • 1 $3.51
    • 10 $2.574
    • 100 $2.34
    • 1000 $2.34
    • 10000 $2.34
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    International Rectifier IRG7IA19U

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRG7IA19U 12
    • 1 $8.016
    • 10 $5.8784
    • 100 $5.8784
    • 1000 $5.8784
    • 10000 $5.8784
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    IRG7I Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7I313UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 330V 20A 34W TO220ABFP Original PDF
    IRG7IA19UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 360V 30A 35W TO220AB Original PDF

    IRG7I Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    igbt 50V 420A

    Abstract: irg7ic irg7i 105MH
    Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original     		IRG7IC18FDPbF O-220AB igbt 50V 420A irg7ic irg7i 105MH PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97636 IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7IA13UPbF O-220 PDF

    irg7ic28u

    Abstract: IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i
    Text: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7IC28UPbF O-220AB irg7ic28u IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i PDF

    irg7ic

    Abstract: IRG7IC30FDPBF
    Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G


    Original     		IRG7IC30FDPbF O-220AB O-220AB irg7ic IRG7IC30FDPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		7636A IRG7IA13UPbF O-220 PDF

    IRG7I313UPBF

    Abstract: JESD22-A114 irg7i313u IRG7
    Text: PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7I313UPbF O-220 IRG7I313UPBF JESD22-A114 irg7i313u IRG7 PDF

    irg7i

    Abstract: No abstract text available
    Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G


    Original     		IRG7IC30FDPbF O-220AB irg7i PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A C E G E TO-220AB Full-Pak n-channel Applications • • • • Air Conditioner Compressor


    Original     		IRG7IC20FDPbF O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A C G E TO-220AB Full-Pak n-channel Applications • • • • E Air Conditioner Compressor


    Original     		IRG7IC23FDPbF O-220AB PDF

    IRG7IC28U

    Abstract: No abstract text available
    Text: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7IC28UPbF O-220AB IRG7IC28U PDF

    pdp driver

    Abstract: JESD22-A114
    Text: PD -96273 PDP TRENCH IGBT IRG7I319UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7I319UPbF O-220AB O-220AB pdp driver JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97758 IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V


    Original     		IRG7IC30FDPbF O-220AB O-220AB PDF

    irg7ic

    Abstract: No abstract text available
    Text: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original     		IRG7IC23FDPbF O-220AB irg7ic PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A C E G E Applications • • • • TO-220AB Full-Pak n-channel Air Conditioner Compressor


    Original     		IRG7IC18FDPbF O-220AB PDF

    IRG7ia

    Abstract: IRG7IA13UPBF igbt display plasma
    Text: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		7636A IRG7IA13UPbF O-220 IRG7ia IRG7IA13UPBF igbt display plasma PDF

    wg65

    Abstract: IRG7IA19U
    Text: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability


    Original     		PD-96356 IRG7IA19UPbF O-220AB I840G wg65 IRG7IA19U PDF

    irg7ic

    Abstract: transistor IC 12A 400v IRG7
    Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original     		IRG7IC20FDPbF O-220AB irg7ic transistor IC 12A 400v IRG7 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability


    Original     		PD-96356 IRG7IA19UPbF O-220AB I840G O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		IRG7I313UPbF O-220 PDF