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Infineon Technologies AG IRG7PG35UPBF IGBT 1000V 55A 210W TO247AC
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DigiKey	IRG7PG35UPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC IRG7PG35UPBF IGBT
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DigiKey	IRG7PG35UPBF	Bulk			117	1 - 10 - 100 - 1000 $2.57 10000 $2.57	Buy Now
Infineon Technologies AG IRG7PH35U-EP IGBT TRENCH 1200V 55A TO247AD
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DigiKey	IRG7PH35U-EP	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC IRG7PH35U-EP IRG7PH35 - DISCRETE IGBT WITHOUT
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DigiKey	IRG7PH35U-EP	Bulk			100	1 - 10 - 100 $3.03 1000 $3.03 10000 $3.03	Buy Now
Infineon Technologies AG IRG7PH42UD-EP IGBT 1200V 85A 320W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH42UD-EP	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRG7 Datasheets (107)

Part	Manufacturer	Description	Datasheet Type	PDF
IRG7CH11K10EF	Infineon Technologies	IGBT 1200V DIE	Original	PDF
IRG7CH20K10EF	Infineon Technologies	IGBT 1200V DIE	Original	PDF
IRG7CH23K10EF	Infineon Technologies	IGBT 1200V DIE	Original	PDF
IRG7CH28UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH28UEF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH30K10EF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER	Original	PDF
IRG7CH35UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH35UEF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH37K10EF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER	Original	PDF
IRG7CH42UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH42UEF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH44K10EF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER	Original	PDF
IRG7CH46UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH46UEF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE	Original	PDF

IRG7CH50K10EF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER	Original	PDF
IRG7CH50UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH50UEF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH54K10EF-R	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH73K10EF	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE	Original	PDF
IRG7CH73K10EF-R	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE	Original	PDF

IRG7 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
igbt 50V 420A Abstract: irg7ic irg7i 105MH Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner	Original	PDF	IRG7IC18FDPbF O-220AB igbt 50V 420A irg7ic irg7i 105MH
IRG7PH42UD1M Abstract: 30A, 600v RECTIFIER DIODE Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode	Original	PDF	IRG7PH42UD1M 1300Vpk D-020D IRG7PH42UD1M 30A, 600v RECTIFIER DIODE
GE Refrigerator Compressor Abstract: 400v 20A ultra fast recovery diode 2245-2 Text: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode	Original	PDF	IRG7RC10FDPbF EIA-481 EIA-541. EIA-481. GE Refrigerator Compressor 400v 20A ultra fast recovery diode 2245-2
IRG7PH35UD1MPBF Abstract: No abstract text available Text: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode	Original	PDF	IRG7PH35UD1MPbF 1300Vpk O-247AD TD-020Dâ IRG7PH35UD1MPBF
IRG7PH42UPBF Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U Text: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	6233A IRG7PH42UPbF IRG7PH42U-EP O-247AD IRG7PH42UPBF IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Untitled Abstract: No abstract text available Text: PD - 97636 IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability	Original	PDF	IRG7IA13UPbF O-220
irg7ph50 Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications	Original	PDF	IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbF RG7PH50K10DEPbF IRG7PH50K10D-EPBF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF O-247AC O-247AD JESD47F) irg7ph50 IRG7PH50K10D 50A 1200V
Untitled Abstract: No abstract text available Text: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability	Original	PDF	IRG7RA13UPbF IGBJESD47F JSTD020D
irg7ic28u Abstract: IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i Text: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability	Original	PDF	IRG7IC28UPbF O-220AB irg7ic28u IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i
irg7ph42ud2pbf Abstract: No abstract text available Text: Approved Not Released IRG7PH42UD2PbF IRG7PH42UD2-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses	Original	PDF	IRG7PH42UD2PbF IRG7PH42UD2-EP O-247AD
IRG7PH42U Abstract: No abstract text available Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode	Original	PDF	IRG7PH42UD1M 1300Vpk IRG7PH42U
irg7ic Abstract: IRG7IC30FDPBF Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G	Original	PDF	IRG7IC30FDPbF O-220AB O-220AB irg7ic IRG7IC30FDPBF
Untitled Abstract: No abstract text available Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD
Untitled Abstract: No abstract text available Text: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability	Original	PDF	7636A IRG7IA13UPbF O-220

IRG7PH42U Abstract: No abstract text available Text: IRG7PH42UD2PbF IRG7PH42UD2-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA 100% of the parts tested for 4X rated current (ILM)	Original	PDF	IRG7PH42UD2PbF IRG7PH42UD2-EP JESD47F) O-247AC O-247AD IRG7PH42U
Untitled Abstract: No abstract text available Text: PD - 96271 IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	IRG7CH54K10B
Untitled Abstract: No abstract text available Text: PD - 97747 IRG7CH73K10B-R Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 s Short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution	Original	PDF	IRG7CH73K10B-R
IRG7CH44K10B Abstract: IRG7CH44 Text: PD - 96270A IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	PDF	6270A IRG7CH44K10B IRG7CH44K10B IRG7CH44
irg7ph35upbf Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
IRG7I313UPBF Abstract: JESD22-A114 irg7i313u IRG7 Text: PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability	Original	PDF	IRG7I313UPbF O-220 IRG7I313UPBF JESD22-A114 irg7i313u IRG7
Untitled Abstract: No abstract text available Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive	Original	PDF	IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbFÂ IRG7PH50K10Dâ O-247AC O-247AD JESD47F)
IRG7CH50 Abstract: Inverters el tape IRG7CH50UB Text: PD - 97628 IRG7CH50UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching	Original	PDF	IRG7CH50UB IRG7CH50 Inverters el tape IRG7CH50UB
Untitled Abstract: No abstract text available Text: PD - 96219 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD2PbF IRG7PH42UD2-EPbF Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA	Original	PDF	IRG7PH42UD2PbF IRG7PH42UD2-EPbF O-247AD
irg7ph35 Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1 Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses	Original	PDF	7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD irg7ph35 irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1

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IRG7 Search Results

IRG7 Price and Stock

Infineon Technologies AG IRG7PG35UPBF

Rochester Electronics LLC IRG7PG35UPBF

Infineon Technologies AG IRG7PH35U-EP

Rochester Electronics LLC IRG7PH35U-EP

Infineon Technologies AG IRG7PH42UD-EP

IRG7 Datasheets (107)

IRG7 Datasheets Context Search

igbt 50V 420A

IRG7PH42UD1M

GE Refrigerator Compressor

IRG7PH35UD1MPBF

IRG7PH42UPBF

Untitled

irg7ph50

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irg7ic28u

irg7ph42ud2pbf

IRG7PH42U

irg7ic

Untitled

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IRG7PH42U

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IRG7CH44K10B

irg7ph35upbf

IRG7I313UPBF

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IRG7CH50

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irg7ph35