Untitled
Abstract: No abstract text available
Text: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
SMD-10
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lt 39 diode smd
Abstract: smd diode 78a IRG4ZH71KD
Text: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,
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IRG4ZH71KD
SMD-10
lt 39 diode smd
smd diode 78a
IRG4ZH71KD
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gFE smd diode
Abstract: smd transistor 18E irg4zh70ud SMD-10 PACKAGE diode smd 312
Text: PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in
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IRG4ZH70UD
SMD-10
gFE smd diode
smd transistor 18E
irg4zh70ud
SMD-10 PACKAGE
diode smd 312
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Untitled
Abstract: No abstract text available
Text: PD - 91723 International I R Rectifier IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, ts c =10ns, V c c = 3 6 0 V , T j = 125°C,
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IRG4ZC71KD
SMD-10
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TRANSISTOR SMD 9bb
Abstract: TI 42A
Text: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
TRANSISTOR SMD 9bb
TI 42A
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irf 44 n
Abstract: smd 2f 2f smd
Text: IRG4ZC70UD Case Outline — SMD-10 17.30 Dimensions are shown in millimeters 14.20 E k G 4.27 n/c 0.90 5.55 29.00 C 0.90 E E Recommended footprint WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020
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IRG4ZC70UD
SMD-10
irf 44 n
smd 2f
2f smd
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IRG4ZC70UD
Abstract: smd diode T3 P channel 50A IGBT smd transistor 18E smd transistor 5c SMD-10 PACKAGE transistor 5c smd package SMD diode 18b 5c
Text: PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in
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IRG4ZC70UD
SMD-10
IRG4ZC70UD
smd diode T3
P channel 50A IGBT
smd transistor 18E
smd transistor 5c
SMD-10 PACKAGE
transistor 5c smd package
SMD diode 18b 5c
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lt 332 diode
Abstract: GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE
Text: PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features ● High short circuit rating optimized for motor control, tsc = 10µs, n-channel C VCES = 1200V VCC = 720V, TJ = 125°C, VGE = 15V
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IRG4ZH50KD
SMD-10
lt 332 diode
GC 72 smd diode
IRG4ZH50KD
transistor smd MJ 145
lt 39 diode smd
smd-10 weight
Diode smd 2f
T4 diode smd
SMD-10 PACKAGE
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smd transistor 2f
Abstract: IRG4ZC71KD bridge diode 60a SMD-10 PACKAGE
Text: PD - 91723 IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 360V , TJ = 125°C,
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IRG4ZC71KD
SMD-10
smd transistor 2f
IRG4ZC71KD
bridge diode 60a
SMD-10 PACKAGE
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t 317 transistor
Abstract: bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451
Text: PD - 91729 International IÖR Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ized fo r m otor control, tsc = 1 0|js, V c c = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
t 317 transistor
bjc 2100
diode um 42A
smd diode sm 3c
kd smd transistor
IOR 451
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A/smd diode t53
Abstract: No abstract text available
Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,
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IRG4ZC70UD
SMD-10
A/smd diode t53
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Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD60107J International IQ R Rectifier IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features Product Summary • F loa ting ch a n n e l d e sig n e d for b o o tstra p op era tion F ully o p e ra tio n a l to + 6 0 0 V o r+ 1 2 0 0 V
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PD60107J
IR2133
IR2135
IR2233
IR2235
IR2133/IR2135/IR2233/IR2235
IR2233J
IRG4PH30KD)
IRG4PH40KD)
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IR2133
Abstract: IR2233 ir2233j application IR2133 3 phase IR2235 application note ir2233j IR2133J IRG4PH40KD IR2135 MV-CA IR2135
Text: Preliminary Data Sheet No. PD60107K IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation · · · · · · Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune
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PD60107K
IR2133
IR2135
IR2233
IR2235
0V/12V
IR213rature
IRG4PH50KD)
IR2133J
IRG4ZH71KD)
ir2233j application
IR2133 3 phase
IR2235
application note ir2233j
IRG4PH40KD IR2135
MV-CA
IR2135
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IR2133 application note
Abstract: IR2133 application notes
Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and
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PD60107
IR2133/IR2135
IR2233/IR2235
0V/12V
28-Lead
IR2133 application note
IR2133 application notes
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IR2133 application note
Abstract: No abstract text available
Text: Data Sheet No. PD60107-R IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune
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PD60107-R
IR2133/IR2135
IR2233/IR2235
0V/12V
IR2133IR2135/IR2233I
IR2233J
IRG4PH50KD)
IR2133J
IRG4ZH71KD)
28-Lead
IR2133 application note
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IR2133 application note
Abstract: mosfet 1200V 40A ax1500 IGBT mod igbt 500V 22A AX-7506-00 SCOP 200-002
Text: Data Sheet No. PD60107 rev.V IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and
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PD60107
IR2133/IR2135
IR2233/IR2235
0V/12V
IR2233J
44-Lead
IR2235J
28-Lead
IR2133
IR2133 application note
mosfet 1200V 40A
ax1500
IGBT mod
igbt 500V 22A
AX-7506-00
SCOP 200-002
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FR4 epoxy glass 1.6mm substrate
Abstract: FR4 1.6mm substrate on 5295 transistor AN-996 SMD10 IRG4Z the calculation of the power dissipation for the IGBT IGBT heatsink cleaning FR4 substrate 1.6mm
Text: AN-996 v.Int Guidelines for the Assembly of SMD10 Devices Introduction This application note gives details of thermal characteristics and mounting considerations for the SMD10 surface mount package from International Rectifier. With a proven track record for mounting on IMS board in International Rectifiers’
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AN-996
SMD10
FR4 epoxy glass 1.6mm substrate
FR4 1.6mm substrate
on 5295 transistor
AN-996
IRG4Z
the calculation of the power dissipation for the IGBT
IGBT heatsink cleaning
FR4 substrate 1.6mm
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IR2133J
Abstract: irg4p*50kd IR2133 IR2135 IR2233 IR2235
Text: Back Preliminary Data Sheet No. PD60107J IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage
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PD60107J
IR2133
IR2135
IR2233
IR2235
0V/12V
Descript90245
IR2133J
irg4p*50kd
IR2135
IR2235
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Untitled
Abstract: No abstract text available
Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD
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HGTD3N60B3S
HGTG12N60B3
HGTG12N60B3D
HGTG12N60C3D
HGTG30N60B3
HGTP12N60B3
HGTP12N60B3D
HGTP14N36G3VL
HGTP14N40F3VL
HGTP20N60B3
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diode smd ED 68
Abstract: transistor smd 4.z ttp 916
Text: I International IG R Rectifier PD -9.16 68 A IR G 4 Z Q 7 0 U D preliminary INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Surface Mountable UltraFast CoPack IGBT Features • U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies
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IR2133
Abstract: ir2233j application IR2133J IR2233 PD60107-P
Text: Data Sheet No. PD60107-P IR2133 5 (J&S) IR2233(5) (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune
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PD60107-P
IR2133
IR2233
0V/12V
IR2233J
IRG4PH50KD)
IR2133J
IRG4ZH71KD)
28-Lead
MS-011AB)
ir2233j application
PD60107-P
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IRG4R
Abstract: IRG4PH50UD IRG4PC40KD 91752 irg4pc50u IRG4BC30S irg4pc50ud ir igbt IRGP25A120UD ULTRAFAST 600V
Text: International Rectifier EXISTING Products The IR IGBT Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. TO-220 Fullpak TO-247 Discrete
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O-220
Pak/TO-262
O-247
Super247
SMD10
IRG4P254S
IRG4BC20W
IRG4BC30W
IRG4BC40W
IRG4R
IRG4PH50UD
IRG4PC40KD
91752
irg4pc50u
IRG4BC30S
irg4pc50ud
ir igbt
IRGP25A120UD
ULTRAFAST 600V
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IR2133 application note
Abstract: ir2233j application ir2133 IR2133J
Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and
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PD60107
IR2133/IR2135
IR2233/IR2235
0V/12V
28-Lead
IR2133 application note
ir2233j application
ir2133
IR2133J
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