IRFY320 Search Results

IRFY320 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFY320		Semelab	N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package		Original	PDF
IRFY320		Semelab	N-Channel Power MOSFET for HI-REL Apps		Scan	PDF
IRFY320C		Semelab	N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package		Original	PDF
IRFY320SM		Semelab	Hermetically Sealed N-Channel Power MOSFET for Hi-Reliability Applications		Scan	PDF

IRFY320 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFY320 Abstract: No abstract text available Text: IRFY320 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 3.3A RDS(ON) = 1.8Ω Ω 1.0 (0.039)	Original	PDF	IRFY320 O257AB O257AB O220M) 13-Sep-02 IRFY320
IRFY320C Abstract: No abstract text available Text: IRFY320C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 3.3A RDS(ON) = 1.8Ω Ω 1.0 (0.039)	Original	PDF	IRFY320C O257AB O257AB O220M) 13-Sep-02 IRFY320C
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	PDF	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	PDF	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
IRFY320 Abstract: LE17 Text: bOE D • filBBlfi? DQQOSSb fiTfi ■ S f l L B SENELAB PLC ^ T ‘3 ^ - I V SEM ELAB IRFY320 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS r y FEATURES • HERMETIC T 0 2 2 0 METAL OR CERAMIC SURFACE M O U N T PACKAGES	OCR Scan	PDF	IRFY320 T0220 T0220M T0220SM 00A//xs IRFY320 LE17
lm3i7 Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M Text: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24	OCR Scan	PDF	IN4001CSMU IN4003CSMD 60DCSM 222IA 2N2221DCSM 2N2222ADCSM 2N2222DCSM 2N2369ADCSM 2N2453D 2N2639DCSM lm3i7 BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M