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    IRFS84 Search Results

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    IRFS84 Price and Stock

    Infineon Technologies AG AUIRFS8407-7TRL

    MOSFET N-CH 40V 240A D2PAK
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    DigiKey AUIRFS8407-7TRL Cut Tape 791 1
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    Infineon Technologies AG AUIRFS8408-7TRL

    MOSFET N-CH 40V 240A D2PAK
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    DigiKey AUIRFS8408-7TRL Cut Tape 700 1
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    AUIRFS8408-7TRL Digi-Reel 700 1
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    Infineon Technologies AG AUIRFS8409-7P

    MOSFET N-CH 40V 240A D2PAK
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    DigiKey AUIRFS8409-7P Tube 310 1
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    Win Source Electronics AUIRFS8409-7P 5,857
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    Infineon Technologies AG AUIRFS8407TRL

    MOSFET N-CH 40V 195A D2PAK
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    DigiKey AUIRFS8407TRL Cut Tape 290 1
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    AUIRFS8407TRL Digi-Reel 290 1
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    Chip1Stop AUIRFS8407TRL Cut Tape 800
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    EBV Elektronik AUIRFS8407TRL 13 Weeks 800
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    Infineon Technologies AG AUIRFS8409-7TRL

    MOSFET N-CH 40V 240A D2PAK
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    DigiKey AUIRFS8409-7TRL Digi-Reel 164 1
    • 1 $6.84
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    AUIRFS8409-7TRL Cut Tape 164 1
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    Mouser Electronics AUIRFS8409-7TRL 4,038
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    EBV Elektronik AUIRFS8409-7TRL 13 Weeks 800
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    Win Source Electronics AUIRFS8409-7TRL 7,000
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    IRFS84 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS840 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    IRFS840 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS840 Unknown FET Data Book Scan PDF
    IRFS840 Samsung Electronics N-Channel Power MOSFET Scan PDF
    IRFS840 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS840A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS840A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS840A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS840B Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF
    IRFS840B Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    IRFS840BF Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    IRFS840BT Fairchild Semiconductor 500V N-Channel B-FET / Substitute of IRFS840 & IRFS840A Original PDF
    IRFS841 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS841 Unknown FET Data Book Scan PDF
    IRFS841 Samsung Electronics N-Channel Power MOSFET Scan PDF
    IRFS841 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS842 Unknown FET Data Book Scan PDF
    IRFS842 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS843 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS843 Unknown FET Data Book Scan PDF

    IRFS84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF IRF840B/IRFS840B IRFS840 IRFS840A IRFS840BT IRFS840B O-220F O-220F O-220F-3 AN-4121:

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF IRF840B/IRFS840B

    IRF840B

    Abstract: irf 940 IRFS840B
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF IRF840B/IRFS840B IRF840B irf 940 IRFS840B

    2005Z

    Abstract: IRF840B IRF series 2005 Z IRFS840B
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF IRF840B/IRFS840B 2005Z IRF840B IRF series 2005 Z IRFS840B

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 8.0A, 500V, RDS on = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original
    PDF IRF840B/IRFS840B O-220 O-220F 54TYP 00x45Â

    IRFS840B

    Abstract: No abstract text available
    Text: IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    PDF IRFS840B IRFS840B

    IRF840B

    Abstract: 2005Z IRF840B free download irf 44 ns IRFS840B 3232A irf 100v 200A
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF IRF840B/IRFS840B IRF840B 2005Z IRF840B free download irf 44 ns IRFS840B 3232A irf 100v 200A

    IRFS840A

    Abstract: No abstract text available
    Text: IRFS840A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 0.85 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 10 µA (Max.) @ VDS = 500V


    Original
    PDF IRFS840A O-220F IRFS840A

    ei3026

    Abstract: EI-3026 12 v 100w power amp diagram capacitor power factor correction schematic AN-42047 FEB112-001 APPLICATION OF IC 4007 GBU45 diode bridge bd1 4a 600V 1N4148 75V 150mA Diodes
    Text: www.fairchildsemi.com FEB112-001 User’s Guide 100W Power Factor Corrected Supply Featured Fairchild Products: FAN7527B www.fairchildsemi.com/FEBsupport 2005 Fairchild Semiconductor Page 1 of 12 Rev 1.2 May 2005 www.fairchildsemi.com Contents 1. General Board Description .3


    Original
    PDF FEB112-001 FAN7527B ei3026 EI-3026 12 v 100w power amp diagram capacitor power factor correction schematic AN-42047 APPLICATION OF IC 4007 GBU45 diode bridge bd1 4a 600V 1N4148 75V 150mA Diodes

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original
    PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original
    PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original
    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    IRFS840

    Abstract: IRFS841 IRFS842 IRFS843
    Text: SAMSUNG ELECTRONICS INC L.7E » • 7Tb4142 001730^ £k>5 ■ SM6K N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s Fast sw itch in g tim es R ug ged polysilicon g a te cell stru ctu re


    OCR Scan
    PDF IRFS840/841/842/843 O-220F IRFS840/841/842/843 IRFS840 IRFS841 IRFS842 IRFS843 IRFS84G

    mosfet yb

    Abstract: IRFS840A
    Text: Advanced IRFS840A P o w e r MOSFET — 500 V ^ D S o n = 0.85 •Si­ CD FEATURES D S S ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance o A valan che R ugged T ech n o lo g y ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting


    OCR Scan
    PDF IRFS840A mosfet yb IRFS840A

    IRFS9620

    Abstract: IRFS9522 SSS6N60 IRFS820
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00


    OCR Scan
    PDF O-220 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 IRFS822 IRFS820 IRFS832 IRFS9620 IRFS9522 SSS6N60

    Untitled

    Abstract: No abstract text available
    Text: Advanced IRFS840A P o w e r M O SFEJT FEATURES B V Ds s “ • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ V DS = 500V


    OCR Scan
    PDF IRFS840A

    Untitled

    Abstract: No abstract text available
    Text: IRFS840A Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS = 500V ■ Lower Rps«*,) : 0.638 Q (Typ.)


    OCR Scan
    PDF IRFS840A

    IRFS840

    Abstract: IRFS841 S-2501 DS10 diode
    Text: N-CHANNEL POWER MOSFETS IRFS840/841 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    PDF IRFS840/841 IRFS840 IRFS841 O-220F 7Tb4142 002fl33M S-2501 DS10 diode

    c1251c

    Abstract: ic ls46a
    Text: IRFS840A A dvanced Power MOSFET FEATURES b v dss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance _p ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA(Max.) @ VDS = 500V


    OCR Scan
    PDF IRFS840A c1251c ic ls46a

    Untitled

    Abstract: No abstract text available
    Text: Advanced IRFS840A Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = 500V ■ Lower RDS(ON) ^D S (o n ) = 0 . 8 5 Q.


    OCR Scan
    PDF IRFS840A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • TO-22OF Lower R qs o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan
    PDF IRFS840/841/842/843 FS841

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan
    PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan
    PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640