Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFS742 Search Results

    IRFS742 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS742 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS742 Unknown FET Data Book Scan PDF
    IRFS742 Samsung Electronics N-Channel Power MOSFETS Scan PDF

    IRFS742 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFS742 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)2.5 @Temp (øC)100# IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)-55õ


    Original
    PDF IRFS742

    1RFS730

    Abstract: IRFS640 1rfs634 IRFS830 IRFS541 IRFS643 samsung IRFS632 IRFS634 1rfs63
    Text: - m % tt f ft * t Vd s or € i % £ Vg s Id Id s s Ig s s Pd Vgs th ft $a 4# Ü Ds on) Vd s = '14 * /CU (V) (A) min * /CH (W) (nA) Vg s (V) (HA) Vd s (V) Ciss g fs iD(on) C oss Crss (V) (V) ft B m m V g s =0 (max) max Id *typ (mA) (0) Vg s (V) Id (A) *typ


    OCR Scan
    PDF Ta-25CC) Ta-25Â IRFS532 O-220 IRFS533 1BFS540 IRFS541 1RFS542 1RFS730 IRFS640 1rfs634 IRFS830 IRFS643 samsung IRFS632 IRFS634 1rfs63

    IRFS540

    Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00


    OCR Scan
    PDF O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522

    um 741

    Abstract: LS 741 a 741 j
    Text: N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower Rds O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan
    PDF IRFS740/741/742/743 IRFS741 IRFS740 IRFS742 IRFS743 um 741 LS 741 a 741 j

    ci 741

    Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
    Text: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan
    PDF 0D17374 IRFS740/741/742/743 O-220F IRFS740/741/742/743 IRFS740 IRFS741 IRFS742 IRFS743 ci 741 tl 741 742 mosfet CI 4017 LS 741 mosfet 350v 10A te 4017

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan
    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1