IRFBG20 Search Results

Contextual Info: PD- 95271 IRFBG20PbF • Lead-Free 05/20/04 Document Number: 91123 www.vishay.com 1 IRFBG20PbF Document Number: 91123 www.vishay.com 2 IRFBG20PbF Document Number: 91123 www.vishay.com 3 IRFBG20PbF Document Number: 91123 www.vishay.com 4 IRFBG20PbF Document Number: 91123

IRFBG20

Abstract: 81262
Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the

IRFBG20

Contextual Info: IRFBG20,SiHFBG20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFBG20

Contextual Info: PD-9.604A International 1ÜS Rectifier IRFBG20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 0 V R DS on = lD = 1 -4 A Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFBG20

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the

100-C

Abstract: IRFBG20 MOSFET 1000v 10a IRFBG20 TO-220
Contextual Info: PD-9.604A International S Rectifier IRFBG20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 11 ß lD = 1.4 A Description DATA SHEETS

Contextual Info: PD- 95271 IRFBG20PbF • Lead-Free 05/20/04 Document Number: 91123 www.vishay.com 1 IRFBG20PbF Document Number: 91123 www.vishay.com 2 IRFBG20PbF Document Number: 91123 www.vishay.com 3 IRFBG20PbF Document Number: 91123 www.vishay.com 4 IRFBG20PbF Document Number: 91123

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBG20 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

IRFBG20

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFBG20PBF

Contextual Info: PD- 95271 IRFBG20PbF • Lead-Free www.irf.com 1 05/20/04 IRFBG20PbF 2 www.irf.com IRFBG20PbF www.irf.com 3 IRFBG20PbF 4 www.irf.com IRFBG20PbF www.irf.com 5 IRFBG20PbF 6 www.irf.com IRFBG20PbF www.irf.com 7 IRFBG20PbF TO-220AB Package Outline 2.87 .113 2.62 (.103)

Contextual Info: International IQR Rectifier pd-9.ioi4 IRFBG20S/L p r e lim in a r y HEXFET Power MOSFET • • • • • • • Surface Mount IRFBC20S Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating Temperature

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: International rag Rectifier MÔ55452 O D I A T E INR PD-9.604A IRFBG20 INTERNATIONAL R E C T I F I E R HEXFET Power MOSFET • • • • • 04=5 • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBG20 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1000 V(BR)GSS (V) I(D) Max. (A)1.4 I(DM) Max. (A) Pulsed I(D).86 @Temp (øC)100# IDM Max (@25øC Amb)5.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)54 Minimum Operating Temp (øC)-55õ

Contextual Info: Vishay Intertechnology, Inc. Industrial / Power Factory Automation One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial / Power Factory Automation Motor Drives 4 Testers 5 Control Units 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0